TLP266J
Photocouplers
GaAs Infrared LED & Photo Triac
TLP266J
1. Applications
•
•
•
•
Triac Drivers
Programmable Logic Controllers (PLCs)
AC-Output Modules
Solid-State Relays
2. General
The TLP266J consists of a zero crossing photo triac, optically coupled to a gallium arsenide infrared emitting
diode. The TLP266J is housed in the SO6 package and guarantees a creepage distance of 5.0 mm (min), a clearance
of 5.0 mm (min) and insulation thickness of 0.4 mm (min). Therefore, the TLP266J meets the reinforced insulation
class requirements of international safety standards.
3. Features
(1)
(2)
(3)
(4)
(5)
(6)
Peak off-state voltage: 600 V (min)
Zero crossing functionary (ZC)
Trigger LED current: 10 mA (max)
On-state current: 70 mA (max)
Isolation voltage: 3750 Vrms (min)
Safety standards
UL-approved: UL1577, File No.E67349
cUL-approved: CSA Component Acceptance Service No.5A File No.E67349
VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)
: EN62368-1 (Pending) (Note 1)
CQC-approved: GB4943.1, GB8898 Japan and Thailand Factory
Note 1: When a VDE approved type is needed, please designate the Option (V4)
(V4).
Table
Rank
None
(IFT7)
Trigger LED Current (Note) (Unless otherwise specified, T
a
= 25
)
Test Condition
V
T
= 3 V
V
T
= 3 V
Trigger LED Current I
FT
(min)
Trigger LED Current I
FT
(max)
10
7
Unit
mA
I
FT
Rank
Marking
10
7
Note:
Specify both the part number and a rank in this format when ordering.
Example: TLP266J (IFT7)
For safety standard certification, however, specify the part number alone.
Example: TLP266J
Start of commercial production
©2017
Toshiba Electronic Devices & Storage Corporation
1
2012-11
2017-08-08
Rev.7.0
TLP266J
4. Packaging and Pin Assignment
1: Anode
3: Cathode
4: Triac Terminal
6: Triac Terminal
11-4M1S
5. Mechanical Parameters
Characteristics
Creepage distances
Clearance distances
Internal isolation thickness
2.54-mm pitch
5.0 (min)
5.0 (min)
0.4 (min)
Unit
mm
6. Product Naming Conventions
(1)
Type of package used for shipment is denoted by a symbol suffix after a part number. The method of
classification is as below.
Example) TLP266J(TPL,E(T
Part number: TLP266J
Tape type: TPL (Note 1)
[[G]]/RoHS COMPATIBLE: E (Note 2)
Domestic ID (Country/Region of origin: Thailand): (T
Note 1: At the part of tape type, below options are used.
TPL, TPR
Note 2: Please contact your Toshiba sales representative for details on environmental information such as the product's
RoHS compatibility.
RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the
restriction of the use of certain hazardous substances in electrical and electronic equipment.
©2017
Toshiba Electronic Devices & Storage Corporation
2
2017-08-08
Rev.7.0
TLP266J
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward current
Input forward current derating
Input forward current (pulsed)
Input reverse voltage
Input power dissipation
Input power dissipation derating
Junction temperature
Detector Off-state output terminal voltage
R.M.S. on-state current
R.M.S. on-state current
R.M.S. on-state current derating
ON-state current (pulsed)
Peak non-repetitive surge current
Output power dissipation
Output power dissipation derating
Junction temperature
Common Operating temperature
Storage temperature
Lead soldering temperature
Isolation voltage
(10 s)
AC, 60 s, R.H.
≤
60 %
(T
a
≥
25
)
(T
a
= 25
)
(T
a
= 70
)
(T
a
≥
25
)
(T
a
≥
53
)
(T
a
≥
53
)
Symbol
I
F
∆I
F
/∆T
a
I
FP
V
R
P
D
∆P
D
/∆T
a
T
j
V
DRM
I
T(RMS)
I
T(RMS)
∆I
T(RMS)
/∆T
a
I
ONP
I
TSM
P
O
∆P
O
/∆T
a
T
j
T
opr
T
stg
T
sol
BV
S
(Note 4)
(Note 2)
(Note 3)
(Note 1)
Note
Rating
50
-0.7
1
5
50
-0.7
125
600
70
40
-0.67
2
1.2
200
-2.0
125
-40 to 100
-55 to 125
260
3750
Vrms
Unit
mA
mA/
A
V
mW
mW/
V
mA
mA
mA/
A
A
mW
mW/
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW)
≤
100
µs,
100 pps
Note 2: Pulse width (PW)
≤
100
µs,
120 pps
Note 3: Pulse width (PW)
≤
10 ms
Note 4: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
Note:
8. Recommended Operating Conditions (Note)
Characteristics
AC mains voltage
Input forward current
ON-state current (pulsed)
Operating temperature
Symbol
V
AC
I
F
I
ONP
T
opr
Note
Min
15
-25
Typ.
20
Max
240
25
1
85
Unit
V
mA
A
Note:
The recommended operating conditions are given as a design guide necessary to obtain the intended
performance of the device. Each parameter is an independent value. When creating a system design using
this device, the electrical characteristics specified in this data sheet should also be considered.
©2017
Toshiba Electronic Devices & Storage Corporation
3
2017-08-08
Rev.7.0
TLP266J
9. Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
LED
Input forward voltage
Input reverse current
Input capacitance
Detector Peak off-state current
Peak on-state voltage
Holding current
Critical rate of rise of off-state
voltage
Critical rate of rise of
commutating voltage (dv/dt)
Symbol
V
F
I
R
C
t
I
DRM
V
TM
I
H
dv/dt
dv/dt(c)
Note
Test Condition
I
F
= 10 mA
V
R
= 5 V
V = 0 V, f = 1 MHz
V
DRM
= 600 V
I
TM
= 70 mA
V
in
= 240 V, T
a
= 85
See Fig. 9.1.
V
in
= 60 Vrms, I
T
= 15 mA
See Fig. 9.1.
Min
1.0
200
Typ.
1.27
30
10
1.7
0.6
500
0.2
Max
1.4
10
1000
2.8
Unit
V
µA
pF
nA
V
mA
V/µs
Fig. 9.1 dv/dt Test Circuit and Waveform
10. Coupled Electrical Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Trigger LED current
Inhibit voltage
Inhibit current
Turn-on time
Symbol
I
FT
V
IH
I
IH
t
on
Note
V
T
= 3 V
I
F
= Rated I
FT
I
F
= Rated I
FT
V
T
= Rated V
DRM
V
D
= 6
→
4 V, R
L
= 100
Ω,
I
F
= Rated I
FT
×
1.5 mA
Test Condition
Min
Typ.
200
30
Max
10
30
600
100
Unit
mA
V
µA
µs
11. Isolation Characteristics (Unless otherwise specified, T
a
= 25
)
Characteristics
Total capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
C
S
R
S
BV
S
Note
Test Condition
Min
1
×
10
12
3750
Typ.
0.8
10
14
10000
10000
Max
Vdc
Unit
pF
Ω
Vrms
(Note 1) V
S
= 0 V, f = 1 MHz
(Note 1) V
S
= 500 V, R.H.
≤
60 %
(Note 1) AC, 60 s
AC, 1 s in oil
DC, 60 s, in oil
Note 1: This device is considered as a two-terminal device: Pins 1 and 3 are shorted together, and pins 4 and 6 are
shorted together.
©2017
Toshiba Electronic Devices & Storage Corporation
4
2017-08-08
Rev.7.0
TLP266J
12. Characteristics Curves (Note)
Fig. 12.1 I
F
- T
a
Fig. 12.2 I
T(RMS)
- T
a
Fig. 12.3 I
F
- V
F
Fig. 12.4 I
FP
- D
R
Fig. 12.5 I
FP
- V
FP
Fig. 12.6 Normalized I
FT
- T
a
©2017
Toshiba Electronic Devices & Storage Corporation
5
2017-08-08
Rev.7.0
京公网安备 11010802033920号
EEWORLD
