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APT10045B2FLL

Description
Power Field-Effect Transistor, 23A I(D), 1000V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
CategoryDiscrete semiconductor    The transistor   
File Size90KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

APT10045B2FLL Overview

Power Field-Effect Transistor, 23A I(D), 1000V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

APT10045B2FLL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)2500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (Abs) (ID)23 A
Maximum drain current (ID)23 A
Maximum drain-source on-resistance0.46 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)570 W
Maximum pulsed drain current (IDM)92 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
APT10045B2FLL
APT10045LFLL
1000V 23A 0.450
POWER MOS 7
®
R
FREDFET
B2FLL
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering R
DS(ON)
®
and Q
g
. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
T-MAX™
TO-264
LFLL
• Increased Power Dissipation
• Easier To Drive
• Popular
T-MAX™
or TO-264 Package
FAST RECOVERY BODY DIODE
D
G
S
All Ratings: T
C
= 25°C unless otherwise specified.
APT10045
UNIT
Volts
Amps
1000
23
92
±30
±40
565
4.52
-55 to 150
300
23
50
4
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/°C
°C
Amps
mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
1000
23
0.450
250
1000
±100
3
5
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 11.5A)
Ohms
µA
nA
Volts
3-2003
050-7039 Rev C
Zero Gate Voltage Drain Current (V
DS
= 1000V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 800V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

APT10045B2FLL Related Products

APT10045B2FLL APT10045LFLL
Description Power Field-Effect Transistor, 23A I(D), 1000V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3 Power Field-Effect Transistor, 23A I(D), 1000V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
Is it Rohs certified? incompatible incompatible
package instruction IN-LINE, R-PSIP-T3 TO-264, 3 PIN
Contacts 3 3
Reach Compliance Code compli unknown
Avalanche Energy Efficiency Rating (Eas) 2500 mJ 2500 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 1000 V 1000 V
Maximum drain current (Abs) (ID) 23 A 23 A
Maximum drain current (ID) 23 A 23 A
Maximum drain-source on-resistance 0.46 Ω 0.46 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSIP-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 570 W 570 W
Maximum pulsed drain current (IDM) 92 A 92 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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