EEWORLDEEWORLDEEWORLD

Part Number

Search

APT10045LFLL

Description
Power Field-Effect Transistor, 23A I(D), 1000V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size90KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

APT10045LFLL Overview

Power Field-Effect Transistor, 23A I(D), 1000V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN

APT10045LFLL Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeTO-264AA
package instructionTO-264, 3 PIN
Contacts3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)2500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (Abs) (ID)23 A
Maximum drain current (ID)23 A
Maximum drain-source on-resistance0.46 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-264AA
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)570 W
Maximum pulsed drain current (IDM)92 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
APT10045B2FLL
APT10045LFLL
1000V 23A 0.450
POWER MOS 7
®
R
FREDFET
B2FLL
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering R
DS(ON)
®
and Q
g
. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
T-MAX™
TO-264
LFLL
• Increased Power Dissipation
• Easier To Drive
• Popular
T-MAX™
or TO-264 Package
FAST RECOVERY BODY DIODE
D
G
S
All Ratings: T
C
= 25°C unless otherwise specified.
APT10045
UNIT
Volts
Amps
1000
23
92
±30
±40
565
4.52
-55 to 150
300
23
50
4
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Volts
Watts
W/°C
°C
Amps
mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
1000
23
0.450
250
1000
±100
3
5
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 11.5A)
Ohms
µA
nA
Volts
3-2003
050-7039 Rev C
Zero Gate Voltage Drain Current (V
DS
= 1000V, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 800V, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com

APT10045LFLL Related Products

APT10045LFLL APT10045B2FLL
Description Power Field-Effect Transistor, 23A I(D), 1000V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Power Field-Effect Transistor, 23A I(D), 1000V, 0.46ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3
Is it Rohs certified? incompatible incompatible
package instruction TO-264, 3 PIN IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code unknown compli
Avalanche Energy Efficiency Rating (Eas) 2500 mJ 2500 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 1000 V 1000 V
Maximum drain current (Abs) (ID) 23 A 23 A
Maximum drain current (ID) 23 A 23 A
Maximum drain-source on-resistance 0.46 Ω 0.46 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSIP-T3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT IN-LINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 570 W 570 W
Maximum pulsed drain current (IDM) 92 A 92 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Please help me with the STM32_SPI driver for AD7689
I'm begging for the STM32_SPI driver for AD7689. Can anyone help me? :Sad:...
wangbin65530 ADI Reference Circuit
ARE C
C language programming for ARM!...
168liuyunhao MCU
It is easy to avoid an open attack but difficult to guard against a hidden arrow. Who did djyos offend?
This is a QQ prompt. I have contacted Tencent and clarified it. Tencent also confirmed that it was reported. This is not the first time that djyos has been attacked. I really don’t know who I have off...
djyos Real-time operating system RTOS
How to write and generate .eep format files
How to write and generate EEP files in ICCAVR that can be directly burned into AVR? Experts please give me some advice!...
cx128051653 Microchip MCU
Please help me
No matter what I do, there are a few components that are always at the bottom and I can't see them. No matter how I set them up, they won't show up. It's really annoying....
曹伟1993 PCB Design

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2904  1804  2121  2780  817  59  37  43  56  17 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号