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SSP6N60

Description
N-CHANNEL POWER MOSFETS
CategoryDiscrete semiconductor    The transistor   
File Size285KB,5 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric Compare View All

SSP6N60 Overview

N-CHANNEL POWER MOSFETS

SSP6N60 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeSFM
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Avalanche Energy Efficiency Rating (Eas)570 mJ
ConfigurationSINGLE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)6 A
Maximum drain current (ID)6 A
Maximum drain-source on-resistance1.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)150 pF
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment125 W
Maximum power dissipation(Abs)125 W
Maximum pulsed drain current (IDM)24 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)320 ns
Maximum opening time (tons)210 ns

SSP6N60 Related Products

SSP6N60 SSP6N55
Description N-CHANNEL POWER MOSFETS N-CHANNEL POWER MOSFETS
Maker SAMSUNG SAMSUNG
Parts packaging code SFM SFM
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknow
Avalanche Energy Efficiency Rating (Eas) 570 mJ 570 mJ
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 600 V 550 V
Maximum drain current (Abs) (ID) 6 A 6 A
Maximum drain current (ID) 6 A 6 A
Maximum drain-source on-resistance 1.8 Ω 1.8 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 150 pF 150 pF
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power consumption environment 125 W 125 W
Maximum power dissipation(Abs) 125 W 125 W
Maximum pulsed drain current (IDM) 24 A 24 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Maximum off time (toff) 320 ns 320 ns
Maximum opening time (tons) 210 ns 210 ns
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