SSP6N55 datasheet, PDF - EEWORLD Datasheet

SSP6N55: DescriptionN-CHANNEL POWER MOSFETS; CategoryDiscrete semiconductor The transistor; File Size285KB，5 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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SSP6N55 Overview

N-CHANNEL POWER MOSFETS

Parameter Name	Attribute value
Maker	SAMSUNG
Parts packaging code	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
Avalanche Energy Efficiency Rating (Eas)	570 mJ
Configuration	SINGLE
Minimum drain-source breakdown voltage	550 V
Maximum drain current (Abs) (ID)	6 A
Maximum drain current (ID)	6 A
Maximum drain-source on-resistance	1.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	150 pF
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	125 W
Maximum power dissipation(Abs)	125 W
Maximum pulsed drain current (IDM)	24 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	320 ns
Maximum opening time (tons)	210 ns

	SSP6N55	SSP6N60
Description	N-CHANNEL POWER MOSFETS	N-CHANNEL POWER MOSFETS
Maker	SAMSUNG	SAMSUNG
Parts packaging code	SFM	SFM
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknow	unknow
Avalanche Energy Efficiency Rating (Eas)	570 mJ	570 mJ
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	550 V	600 V
Maximum drain current (Abs) (ID)	6 A	6 A
Maximum drain current (ID)	6 A	6 A
Maximum drain-source on-resistance	1.8 Ω	1.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	150 pF	150 pF
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	125 W	125 W
Maximum power dissipation(Abs)	125 W	125 W
Maximum pulsed drain current (IDM)	24 A	24 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	320 ns	320 ns
Maximum opening time (tons)	210 ns	210 ns

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