CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1.
θ
JA
is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
2.
θ
JA
is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379. For
θ
JC
, the “case temp” location is the center of the exposed metal pad on the package underside.
3. Parameters designated by GBD are "Guaranteed by Design."
Electrical Specifications
PARAMETER
V
CC
SUPPLY CURRENT
Shutdown Supply V
CC
Shutdown Supply V
PVCC
POWER-ON RESET
V
CC
/V
PVCC
Rising Threshold
V
CC
/V
PVCC
Hysteresis
OCSET Rising Threshold
OCSET Hysteresis
Enable - Rising Threshold
Enable - Hysteresis
OSCILLATOR
Trim Test Frequency
Total Variation
Ramp Amplitude
ERROR AMPLIFIER
DC Gain
Gain-Bandwidth Product
Slew Rate
PROTECTION
OCSET Current
OCSET Current
OCSET Measurement Offset
Soft-start Current
Recommended Operating Conditions, unless otherwise noted specifications in
bold
are valid for process,
temperature, and line operating conditions.
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
I
VCC
I
PVCC
SS/EN = 0V
SS/EN = 0V
3.5
0.30
6.1
0.5
8.5
0.75
mA
mA
6.55
170
0.70
180
1.4
175
7.10
250
0.73
200
1.5
250
7.55
500
0.75
220
1.60
325
V
mV
V
mV
V
mV
R
RT
= OPEN V
VCC
= 12
8kΩ < R
RT
to GND < 200kΩ - GBD
∆V
OSC
R
RT
= OPEN
175
-
1.7
200
±15
1.9
220
-
2.15
kHz
%
V
P-P
R
L
= 10kΩ, C
L
= 100pF - GBD
GBWP
SR
R
L
= 10kΩ, C
L
= 100pF - GBD
R
L
= 10kΩ, C
L
= 100pF - GBD
-
-
-
88
15
6
-
-
-
dB
MHz
V/µs
I
OCSET
I
OCSET
T
J
= 0°C to 70°C
T
J
= -40°C to 85°C
180
176
-
22
200
200
±10
30
220
224
-
38
µA
µA
mV
µA
OCP
OFFSET
OCSET= 1.5V to 15.4V - GBD
I
SS
4
FN9257.0
February 13, 2006
ISL8104
Electrical Specifications
PARAMETER
REFERENCE
Reference Voltage
T
J
= 0°C to 70°C
T
J
= -40°C to 85°C
System Accuracy
T
J
= 0°C to 70°C
T
J
= -40°C to 85°C
REFIN Current Source (QFN Only)
REFIN Threshold (QFN Only)
REFIN Offset (QFN Only)
GATE DRIVERS
Upper Drive Source Current
Upper Drive Source Impedance
Upper Drive Sink Current
Upper Drive Sink Impedance
Lower Drive Source Current
Lower Drive Source Impedance
Lower Drive Sink Current
Lower Drive Sink Impedance
SSDONE (QFN ONLY)
SSDONE Low Output Voltage
I
SSDONE
= 2mA
0.30
V
I
U_SOURCE
V
BOOT
- V
PHASE
= 14V, 3nF Load - GBD
-
-
-
-
-
-
-
-
1.25
2.0
2
1.3
2
1.3
3
0.94
-
-
-
-
-
-
-
-
A
Ω
A
Ω
A
Ω
A
Ω
0.591
0.588
-1.0
-1.5
-4
2.10
-3
0.597
0.597
-
-
-6
-
-
0.603
0.606
1.0
1.5
-8
3.50
3
V
V
%
%
µA
V
mV
Recommended Operating Conditions, unless otherwise noted specifications in
bold
are valid for process,
temperature, and line operating conditions.
(Continued)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
R
U_SOURCE
90mA Source Current
I
U_SINK
R
U_SINK
I
L_SOURCE
V
BOOT
- V
PHASE
= 14V, 3nF Load - GBD
90mA Source Current
V
PVCC
= 14V, 3nF Load - GBD
R
L_SOURCE
90mA Source Current
I
L_SINK
R
L_SINK
V
PVCC
= 14V, 3nF Load - GBD
90mA Source Current
Typical Performance Curves
80
R
RT
PULLUP
TO +14V
1000
RESISTANCE (kΩ)
I
PVCC+VCC
(mA)
70
60
50
C
GATE
= 1000pF
40
30
20
10
0
100
200
300
400
500
C
GATE
= 10pF
600
700
800
900
1000
C
GATE
= 3300pF
100
R
RT
PULLDOWN
TO GND
10
10
100
SWITCHING FREQUENCY (kHz)
1000
SWITCHING FREQUENCY (kHz)
FIGURE 1. R
RT
RESISTANCE vs FREQUENCY
FIGURE 2. BIAS SUPPLY CURRENT vs FREQUENCY
Functional Pin Description (SOIC/QFN)
RT (Pin 1/14)
This pin provides oscillator switching frequency adjustment.
By placing a resistor (R
RT
) from this pin to GND, the
switching frequency is set from between 200kHz and
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