FES2G datasheet, PDF - EEWORLD Datasheet

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FES2G: Description2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA; Categorysemiconductor Discrete semiconductor; File Size40KB，2 Pages; ManufacturerETC

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FES2G Overview

2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA

FES2G Preview

FES2A ........ FES2J

2 Amp. Surface Mounted Glass Passivated Ultrafast Recovery Rectifier

Dimensions in mm.

5.1

± 0.3

CASE:

SMB/DO-214AA

Voltage

50 to 600 V

Current

2.0 A

1.25

± 0.25

1.25

± 0.25

Week code

•

Glass passivated junction

•

High current capability

•

The plastic material carries U/L 94 V-0

•

Low profile package

•

Easy pick and place

•

High temperature soldering 260 ºC 10 sec

2.0

Year code

Type No. Closs

4.2

Standard soldering pad

MECHANICAL DATA

Terminals: Solder plated, solderable per IEC 68-2-20.

Standard Packaging: 8 mm. tape (EIA-RS-481).

Weight: 0.093 g.

Maximum Ratings and Electrical Characteristics at 25 ºC

FES2A

FES2B

FES2D

FES2F

FES2G

FES2J

Marking Code

RRM

RMS

F(AV)

FSM

th (j-l)

th (j-a)

j -

stg

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Forward current at T

= 110 ºC

100

200

140

300

210

400

280

400

600

420

600

200

300

2.0 A

50 A

8.3 ms. peak forward surge current

(Jedec Method)

Maximum Instantaneous Forward

Voltage at 2.0A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Ta = 25 ºC

Ta = 100 ºC

0.95 V

10 µA

350 µA

50 ns

35 pF

20 ºC/W

60 ºC/W

-55 to + 150 ºC

1.25 V

Maximum Reverse Recovery Time (0.5/1/0.25A)

Typical Junction Capacitance (1MHz; -4V)

Typical Thermal Resistance

(5x5 mm

x 130 µ Copper Area)

Operating Junction and Storage

Temperature Range

Jun - 03

FES2

Rating And Characteristic Curves

FORWARD CURRENT DERATING CURVE

TYPICAL FORWARD CHARACTERISTIC

0.2

5x5mm

x 130

Thick Copper Land Areas

FES2A....2D

FES2F....2J

0.1

T j = 25 ºC

75 100 125 150 175

Lead temperature (ºC)

MAXIMUM NON REPETITIVE

PEAK FORWARD SURGE CURRENT

0.01

0.6

0.8

1.2

1.4

1.6

, instantaneous forward

voltage (V)

TYPICAL REVERSE CHARACTERISTIC

T j = 125 ºC

T j = 75 ºC

0.1

0.01

2 4

100

TYPICAL JUNCTION

CAPACITANCE

T j = 25 ºC

f = 1 MHz

T j = 25 ºC

Number of cycles at 60 Hz

80 100 120

Percent of rated peak

reverse voltage

100

0.1

0.4 1.0

4 10

40 100

, reverse voltage (V)

Jun - 03

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FES2G Related Products

	FES2G	FES2D	FES2F	FES2A	FES2J	FES2B
Description	2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 300 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA	2 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA

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