NTF3055-100,
NVF3055-100
Power MOSFET
3.0 Amps, 60 Volts
N−Channel SOT−223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
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3.0 A, 60 V
R
DS(on)
= 110 mW
N−Channel
D
•
NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
Applications
•
•
•
•
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
GS
= 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t
p
≤
10 ms)
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
≤
10
ms)
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 10 Vdc,
I
L
(pk) = 7.0 Apk, L = 3.0 mH, V
DS
= 60 Vdc)
Thermal Resistance
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
Value
60
60
±
20
±
30
3.0
1.4
9.0
2.1
1.3
0.014
−55
to 175
74
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W
W/°C
°C
mJ
1
2
3
4
MARKING
DIAGRAM
& PIN
ASSIGNMENT
Drain
4
SOT−223
CASE 318E
STYLE 3
AWW
3055G
G
1
Gate
2
3
Drain Source
I
D
I
D
I
DM
P
D
A
= Assembly Location
WW
= Work Week
3055
= Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
T
J
, T
stg
E
AS
ORDERING INFORMATION
Device
NTF3055−100T1G
NTF3055−100T3G
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
†
1000 / Tape &
Reel
4000 / Tape &
Reel
1000 / Tape &
Reel
°C/W
R
qJA
R
qJA
T
L
72.3
114
260
°C
NVF3055−100T1G
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.
(Cu. Area 1.127 sq in).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2−2.4 oz. (Cu. Area 0.272 sq in).
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
July, 2016 − Rev. 5
Publication Order Number:
NTF3055−100/D
NTF3055−100, NVF3055−100
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
Gate−Body Leakage Current
(V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250
mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 1.5 Adc)
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 3.0 Adc)
(V
GS
= 10 Vdc, I
D
= 1.5 Adc, T
J
= 150°C)
Forward Transconductance (Note 3)
(V
DS
= 8.0 Vdc, I
D
= 1.7 Adc)
V
GS(th)
2.0
−
R
DS(on)
−
V
DS(on)
−
g
fs
−
0.27
0.24
3.2
0.40
−
−
Mhos
88
110
Vdc
3.0
6.6
4.0
−
Vdc
mV/°C
mW
V
(BR)DSS
60
−
I
DSS
−
−
I
GSS
−
−
−
−
1.0
10
±
100
nAdc
68
66
−
−
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 V,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
324
35
110
455
50
155
pF
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DS
= 48 Vdc, I
D
= 3.0 Adc,
V
GS
= 10 Vdc) (Note 3)
(V
DD
= 30 Vdc, I
D
= 3.0 Adc,
V
GS
= 10 Vdc,
R
G
= 9.1
W)
(Note 3)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
−
−
−
−
−
−
−
9.4
14
21
13
10.6
1.9
4.2
20
30
45
30
22
−
−
nC
ns
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 3.0 Adc, V
GS
= 0 Vdc)
(I
S
= 3.0 Adc, V
GS
= 0 Vdc,
T
J
= 150°C) (Note 3)
V
SD
−
−
t
rr
(I
S
= 3.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
4. Switching characteristics are independent of operating junction temperatures.
t
a
t
b
Q
RR
−
−
−
−
0.89
0.74
30
22
8.6
0.04
1.0
−
−
−
−
−
mC
ns
Vdc
Reverse Recovery Time
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2
NTF3055−100, NVF3055−100
6
I
D,
DRAIN CURRENT (AMPS)
I
D,
DRAIN CURRENT (AMPS)
5
4
3
2
1
0
0
1
2
3
4
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
= 6 V
V
GS
= 8 V
V
GS
= 4.5 V
V
GS
= 10 V
6
V
DS
≥
10 V
V
GS
= 5 V
5
4
3
2
1
0
3
3.5
4
4.5
5
5.5
6
V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
T
J
= 25°C
T
J
= 100°C
T
J
= −55°C
V
GS
= 4 V
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.16
V
GS
= 10 V
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
1
2
3
4
5
6
T
J
= −55°C
T
J
= 25°C
T
J
= 100°C
0.16
V
GS
= 15 V
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
1
2
3
4
5
6
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
I
D,
DRAIN CURRENT (AMPS)
I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
−50
I
D
= 1.5 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
V
GS
= 0 V
T
J
= 150°C
100
T
J
= 125°C
10
T
J
= 100°C
1
−25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
0
10
20
30
40
50
60
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
NTF3055−100, NVF3055−100
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
800
700
C, CAPACITANCE (pF)
600
500
V
DS
= 0 V
C
iss
V
GS
= 0 V
12
10
8
6
4
2
0
0
Q
1
Q
T
V
GS
T
J
= 25°C
C
rss
400
300
200
100
0
10
5 V
GS
0 V
DS
5
C
rss
C
oss
C
iss
Q
2
I
D
= 3 A
T
J
= 25°C
2
4
6
8
10
12
10
15
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
100
I
S
, SOURCE CURRENT (AMPS)
V
DS
= 30 V
I
D
= 3 A
V
GS
= 10 V
t, TIME (ns)
t
d(off)
t
r
10
t
d(on)
t
f
3
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
V
GS
= 0 V
T
J
= 25°C
2
1
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.54
0.58 0.62
0.66
0.7
0.74 0.78 0.82 0.86
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
10
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
80
70
60
50
40
30
20
10
0
Figure 10. Diode Forward Voltage versus Current
I
D
= 7 A
1
1 ms
10 ms
0.1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
100
ms
dc
10
100
0.01
0.1
25
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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4
NTF3055−100, NVF3055−100
r(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE RESISTANCE
100
D = 0.5
0.2
0.1
0.05
0.02
1
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
10
Figure 13. Thermal Response
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