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Datasheet> All Categories > semiconductor> Discrete semiconductor> NTF3055-100
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NTF3055-100

Description
3 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Categorysemiconductor    Discrete semiconductor   
File Size75KB，6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NTF3055-100 Overview

3 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA

NTF3055-100 Parametric

Parameter NameAttribute value
Number of terminals4
Minimum breakdown voltage60 V
Processing package descriptionLEAD FREE, CASE 318E-04, TO-261, 4 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current3 A
Rated avalanche energy74 mJ
Maximum drain on-resistance0.1100 ohm
Maximum leakage current pulse9 A

NTF3055-100 Preview

NTF3055-100,
NVF3055-100
Power MOSFET
3.0 Amps, 60 Volts
N−Channel SOT−223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
www.onsemi.com
3.0 A, 60 V
R
DS(on)
= 110 mW
N−Channel
D
•
NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
Applications
•
•
•
•
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
GS
= 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (t
p
≤
10 ms)
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
≤
10
ms)
Total Power Dissipation @ T
A
= 25°C (Note 1)
Total Power Dissipation @ T
A
= 25°C (Note 2)
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 25 Vdc, V
GS
= 10 Vdc,
I
L
(pk) = 7.0 Apk, L = 3.0 mH, V
DS
= 60 Vdc)
Thermal Resistance
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
Symbol
V
DSS
V
DGR
V
GS
Value
60
60
±
20
±
30
3.0
1.4
9.0
2.1
1.3
0.014
−55
to 175
74
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
W
W
W/°C
°C
mJ
1
2
3
4
MARKING
DIAGRAM
& PIN
ASSIGNMENT
Drain
4
SOT−223
CASE 318E
STYLE 3
AWW
3055G
G
1
Gate
2
3
Drain Source
I
D
I
D
I
DM
P
D
A
= Assembly Location
WW
= Work Week
3055
= Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
T
J
, T
stg
E
AS
ORDERING INFORMATION
Device
NTF3055−100T1G
NTF3055−100T3G
Package
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
SOT−223
(Pb−Free)
Shipping
†
1000 / Tape &
Reel
4000 / Tape &
Reel
1000 / Tape &
Reel
°C/W
R
qJA
R
qJA
T
L
72.3
114
260
°C
NVF3055−100T1G
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 1″ pad size, 1 oz.
(Cu. Area 1.127 sq in).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2−2.4 oz. (Cu. Area 0.272 sq in).
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
1
July, 2016 − Rev. 5
Publication Order Number:
NTF3055−100/D
NTF3055−100, NVF3055−100
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 Vdc, I
D
= 250
mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
Gate−Body Leakage Current
(V
GS
=
±
20 Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage (Note 3)
(V
DS
= V
GS
, I
D
= 250
mAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 1.5 Adc)
Static Drain−to−Source On−Resistance (Note 3)
(V
GS
= 10 Vdc, I
D
= 3.0 Adc)
(V
GS
= 10 Vdc, I
D
= 1.5 Adc, T
J
= 150°C)
Forward Transconductance (Note 3)
(V
DS
= 8.0 Vdc, I
D
= 1.7 Adc)
V
GS(th)
2.0
−
R
DS(on)
−
V
DS(on)
−
g
fs
−
0.27
0.24
3.2
0.40
−
−
Mhos
88
110
Vdc
3.0
6.6
4.0
−
Vdc
mV/°C
mW
V
(BR)DSS
60
−
I
DSS
−
−
I
GSS
−
−
−
−
1.0
10
±
100
nAdc
68
66
−
−
Vdc
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 V,
f = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
324
35
110
455
50
155
pF
SWITCHING CHARACTERISTICS
(Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DS
= 48 Vdc, I
D
= 3.0 Adc,
V
GS
= 10 Vdc) (Note 3)
(V
DD
= 30 Vdc, I
D
= 3.0 Adc,
V
GS
= 10 Vdc,
R
G
= 9.1
W)
(Note 3)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
−
−
−
−
−
−
−
9.4
14
21
13
10.6
1.9
4.2
20
30
45
30
22
−
−
nC
ns
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 3.0 Adc, V
GS
= 0 Vdc)
(I
S
= 3.0 Adc, V
GS
= 0 Vdc,
T
J
= 150°C) (Note 3)
V
SD
−
−
t
rr
(I
S
= 3.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms) (Note 3)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
4. Switching characteristics are independent of operating junction temperatures.
t
a
t
b
Q
RR
−
−
−
−
0.89
0.74
30
22
8.6
0.04
1.0
−
−
−
−
−
mC
ns
Vdc
Reverse Recovery Time
www.onsemi.com
2
NTF3055−100, NVF3055−100
6
I
D,
DRAIN CURRENT (AMPS)
I
D,
DRAIN CURRENT (AMPS)
5
4
3
2
1
0
0
1
2
3
4
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
= 6 V
V
GS
= 8 V
V
GS
= 4.5 V
V
GS
= 10 V
6
V
DS
≥
10 V
V
GS
= 5 V
5
4
3
2
1
0
3
3.5
4
4.5
5
5.5
6
V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
T
J
= 25°C
T
J
= 100°C
T
J
= −55°C
V
GS
= 4 V
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.16
V
GS
= 10 V
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
1
2
3
4
5
6
T
J
= −55°C
T
J
= 25°C
T
J
= 100°C
0.16
V
GS
= 15 V
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
1
2
3
4
5
6
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
I
D,
DRAIN CURRENT (AMPS)
I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
−50
I
D
= 1.5 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1000
V
GS
= 0 V
T
J
= 150°C
100
T
J
= 125°C
10
T
J
= 100°C
1
−25
0
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
0
10
20
30
40
50
60
V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
www.onsemi.com
3
NTF3055−100, NVF3055−100
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
800
700
C, CAPACITANCE (pF)
600
500
V
DS
= 0 V
C
iss
V
GS
= 0 V
12
10
8
6
4
2
0
0
Q
1
Q
T
V
GS
T
J
= 25°C
C
rss
400
300
200
100
0
10
5 V
GS
0 V
DS
5
C
rss
C
oss
C
iss
Q
2
I
D
= 3 A
T
J
= 25°C
2
4
6
8
10
12
10
15
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
100
I
S
, SOURCE CURRENT (AMPS)
V
DS
= 30 V
I
D
= 3 A
V
GS
= 10 V
t, TIME (ns)
t
d(off)
t
r
10
t
d(on)
t
f
3
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
V
GS
= 0 V
T
J
= 25°C
2
1
1
1
10
R
G
, GATE RESISTANCE (W)
100
0
0.54
0.58 0.62
0.66
0.7
0.74 0.78 0.82 0.86
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
100
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 20 V
SINGLE PULSE
T
C
= 25°C
10
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
80
70
60
50
40
30
20
10
0
Figure 10. Diode Forward Voltage versus Current
I
D
= 7 A
1
1 ms
10 ms
0.1
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
100
ms
dc
10
100
0.01
0.1
25
50
75
100
125
150
175
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
www.onsemi.com
4
NTF3055−100, NVF3055−100
r(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE RESISTANCE
100
D = 0.5
0.2
0.1
0.05
0.02
1
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
t, TIME (s)
0.1
1
10
100
1000
10
Figure 13. Thermal Response
www.onsemi.com
5
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NTF3055-100 Related Products

NTF3055-100 NTF3055-100T3 NTF3055-100T3LF
Description 3 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA 3 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA 3 A, 60 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA
Number of terminals 4 4 4
surface mount Yes YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
Shell connection DRAIN DRAIN DRAIN
Number of components 1 1 1
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Is it Rohs certified? - incompatible incompatible
Maker - ON Semiconductor ON Semiconductor
Parts packaging code - TO-261AA TO-261AA
package instruction - CASE 318E-04, TO-261, 4 PIN CASE 318E-04, TO-261, 4 PIN
Contacts - 4 4
Manufacturer packaging code - CASE 318E-04 CASE 318E-04
Reach Compliance Code - not_compliant not_compliant
ECCN code - EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) - 74 mJ 74 mJ
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 60 V 60 V
Maximum drain current (Abs) (ID) - 3 A 3 A
Maximum drain current (ID) - 3 A 3 A
Maximum drain-source on-resistance - 0.11 Ω 0.11 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-261AA TO-261AA
JESD-30 code - R-PDSO-G4 R-PDSO-G4
JESD-609 code - e0 e0
Humidity sensitivity level - 3 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 175 °C 175 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 240 NOT SPECIFIED
Polarity/channel type - N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) - 1.3 W 1.3 W
Maximum pulsed drain current (IDM) - 9 A 9 A
Certification status - Not Qualified Not Qualified
Terminal surface - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Maximum time at peak reflow temperature - 30 NOT SPECIFIED

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