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AO7403L

Description
P-Channel Enhancement Mode Field Effect Transistor
File Size197KB,7 Pages
ManufacturerETC
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AO7403L Overview

P-Channel Enhancement Mode Field Effect Transistor

Rev 2: Aug 2004
AO7403, AO7403L ( Green Product )
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7403 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge, and
operation with gate voltages as low as 1.8V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
It is ESD protected to 2KV HBM. AO7403L (Green
Poduct) is offered in a lead-free package.
Features
V
DS
(V) = -20V
I
D
= -0.7A
R
DS(ON)
< 470mΩ (V
GS
= -4.5V)
R
DS(ON)
< 625mΩ (V
GS
= -2.5V)
R
DS(ON)
< 900mΩ (V
GS
= -1.8V)
SC-70
(SOT-323)
Top View
G
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-20
±8
-0.7
-0.5
-3
0.35
0.22
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
300
350
280
Max
360
425
320
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

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Description P-Channel Enhancement Mode Field Effect Transistor P-Channel Enhancement Mode Field Effect Transistor
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