Rev 2: Aug 2004
AO7403, AO7403L ( Green Product )
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7403 uses advanced trench technology to
provide excellent R
DS(ON)
, low gate charge, and
operation with gate voltages as low as 1.8V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
It is ESD protected to 2KV HBM. AO7403L (Green
Poduct) is offered in a lead-free package.
Features
V
DS
(V) = -20V
I
D
= -0.7A
R
DS(ON)
< 470mΩ (V
GS
= -4.5V)
R
DS(ON)
< 625mΩ (V
GS
= -2.5V)
R
DS(ON)
< 900mΩ (V
GS
= -1.8V)
SC-70
(SOT-323)
Top View
G
D
S
G
D
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-20
±8
-0.7
-0.5
-3
0.35
0.22
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
A
A
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
300
350
280
Max
360
425
320
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
AO7403, AO7403L
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-16V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
=±8V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-0.7A
T
J
=125°C
V
GS
=-2.5V, I
D
=-0.6A
V
GS
=-1.8V, I
D
=-0.5A
V
DS
=-5V, I
D
=-0.7A
-0.5
-3
388
542
519
666
1.7
-0.86
470
660
625
900
-1
-0.4
-0.6
Min
-20
-1
-5
±10
-0.9
Typ
Max
Units
V
µA
µA
V
A
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
Static Drain-Source On-Resistance
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
I
S
=-0.5A,V
GS
=0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=-10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
114
17
14
12
1.44
0.14
0.35
6.5
6.5
18.2
5.5
10
3
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
gs
Gate Source Charge
Q
gd
Gate Drain Charge
t
D(on)
Turn-On DelayTime
t
r
Turn-On Rise Time
t
D(off)
Turn-Off DelayTime
t
f
Turn-Off Fall Time
t
rr
Body Diode Reverse Recovery Time
Q
rr
Body Diode Reverse Recovery Charge
V
GS
=-4.5V, V
DS
=-10V, I
D
=-0.7A
V
GS
=-4.5V, V
DS
=-10V,
R
L
=14.3Ω, R
GEN
=3Ω
I
F
=-0.7A, dI/dt=100A/µs
I
F
=-0.7A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80
µs
pulses, duty cycle 0.5% max.
2
E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AO7403, AO7403L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
-8V
-6V
-4.5V
-4V
4
-I
D
(A)
-3V
2
-2.5V
V
GS
=-2.0V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
1000
Normalized On-Resistance
900
800
R
DS(ON)
(m
Ω
)
700
600
500
400
300
0
1
2
3
4
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
900
800
700
-I
S
(A)
600
500
25°C
400
300
0
2
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05
1.0E-06
0.0
0.4
0.8
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
D
=-0.7A
1.0E+00
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
1.0E-04
R
DS(ON)
(m
Ω
)
V
GS
=-4.5V
V
GS
=-2.5V
V
GS
=-1.8V
1.6
1
-3.5V
-I
D
(A)
2
3
125°C
4
25°C
V
DS
=-5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
V
GS
=-1.8V
I
D
=-0.5A
1.4
V
GS
=-2.5V
I
D
=-0.6A
1.2
V
GS
=-4.5V
I
D
=-0.7A
1
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
125°C
Alpha & Omega Semiconductor, Ltd.
AO7403, AO7403L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
4
-V
GS
(Volts)
3
2
1
0
0.0
0.5
1.0
1.5
2.0
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
200
V
DS
=-10V
I
D
=-0.7A
Capacitance (pF)
150
C
iss
100
C
oss
50
C
rss
0
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.00
T
J(Max)
=150°C
T
A
=25°C
10.00
Power (W)
-I
D
(Amps)
R
DS(ON)
limited
1.00
0.1
1s
10s
0.01
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
DC
100µs
1ms
10ms
10µs
14
12
10
8
6
4
2
0
0.001
T
J(Max)
=150°C
T
A
=25°C
0.10
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=360°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
Document No.
Version
Title
PD-00128
rev C
AO7403 Marking Description
SC-70(3L) PACKAGE MARKING DESCRIPTION
LT
PNW
PNW
Standard product
Green product
NOTE:
P - Product number code
N
- Assembly&Foundry location code
W - Year and Week code
LT - Assembly lot code.
PART NO. DESCRIPTION CODE (P&N)
3&N
Standard product
AO7403
3&N
AO7403L Green product
LT
Rev. A
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