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BSN011NE2LSXUSA1

Description
MOSFET N-Ch 25V 50A USON-6 OptiMOS
Categorysemiconductor    Discrete semiconductor   
File Size534KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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MOSFET N-Ch 25V 50A USON-6 OptiMOS

BSN011NE2LSXUSA1 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerInfineon
Product CategoryMOSFET
TechnologySi
Mounting StyleSMD/SMT
Package / CaseUSON-6
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage25 V
Id - Continuous Drain Current50 A
Rds On - Drain-Source Resistance900 uOhms
Vgs th - Gate-Source Threshold Voltage1.2 V
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge72 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation78 W
Channel ModeEnhancement
PackagingCut Tape
PackagingReel
Height0.65 mm
Length3 mm
Transistor Type1 N-Channel
Width3 mm
Forward Transconductance - Min85 S
Fall Time5.2 ns
NumOfPackaging2
Rise Time7.8 ns
Factory Pack Quantity2000
Typical Turn-Off Delay Time29 ns
Typical Turn-On Delay Time3.9 ns
BSN011NE2LS
OptiMOS
Features
TM
Power-MOSFET
Product Summary
V
DS
R
DS(on),max
I
D
Q
OSS
Q
G
(0V..10V)
25
1.1
50
32
54
V
mW
A
nC
nC
• Optimized for high performance Buck converter
• Very low parasitic inductance
• Low profile (<0.5 mm)
• Double side cooling
• N-channel
• 100% avalanche tested
• Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
• Qualified according to JEDEC
1)
for target applications
LG-USON-6-1
Type
BSN011NE2LS
Package
LG-USON-6-1
Marking
011NE2L
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
V
GS
=10 V,
T
A
=25 °C,
R
thJA
=50 K/W
2)
Pulsed drain current
3)
Avalanche current, single pulse
4)
Avalanche energy, single pulse
Gate source voltage
1)
Value
50
50
50
50
Unit
A
33
200
50
145
±20
mJ
V
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=50 A,
R
GS
=25
W
J-STD20 and JESD22
Rev. 2.0
page 1
2014-05-23

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