ATF-521P8 datasheet, PDF - EEWORLD Datasheet

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ATF-521P8: DescriptionHigh Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package; File Size242KB，24 Pages; ManufacturerETC

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ATF-521P8 Overview

High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package

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Agilent ATF-521P8 High Linearity

Enhancement Mode

[1]

Pseudomorphic HEMT in

2x2 mm

LPCC

[3]

Package

Data Sheet

Features

• Single voltage operation

• High linearity and P1dB

Description

Agilent Technologies’s ATF-521P8 is a

single-voltage high linearity, low noise

E-pHEMT housed in an 8-lead JEDEC-

standard leadless plastic chip carrier

(LPCC

[3]

) package. The device is ideal

as a medium-power, high-linearity am-

plifier. Its operating frequency range

is from 50 MHz to 6 GHz.

The thermally efficient package mea-

sures only 2mm x 2mm x 0.75mm. Its

backside metalization provides excel-

lent thermal dissipation as well as vi-

sual evidence of solder reflow. The

device has a Point MTTF of over 300

years at a mounting temperature of

+85°C. All devices are 100% RF & DC

tested.

Pin Connections and

Package Marking

Pin 8

Pin 7 (Drain)

Pin 6

Pin 5

• Low noise figure

• Excellent uniformity in product

specifications

Pin 1 (Source)

Pin 2 (Gate)

Pin 3

Pin 4 (Source)

Source

(Thermal/RF Gnd)

• Small package size:

2.0 x 2.0 x 0.75 mm

• Point MTTF > 300 years

[2]

• MSL-1 and lead-free

• Tape-and-reel packaging option

available

Bottom View

Pin 1 (Source)

Pin 2 (Gate)

Pin 3

Pin 4 (Source)

Pin 8

2Px

Top View

Pin 7 (Drain)

Pin 6

Pin 5

Specifications

2 GHz; 4.5V, 200 mA (Typ.)

• 42 dBm output IP3

• 26.5 dBm output power at 1 dB gain

compression

• 1.5 dB noise figure

• 17 dB Gain

Note:

Package marking provides orientation and

identification

“2P” = Device Code

“x” = Month code indicates the month of

manufacture.

Note:

1. Enhancement mode technology employs a

single positive V

, eliminating the need of

negative gate voltage associated with

conventional depletion mode devices.

2. Refer to reliability datasheet for detailed

MTTF data

3. Conform to JEDEC reference outline MO229

for DRP-N

4. Linearity Figure of Merit (LFOM) is essentially

OIP3 divided by DC bias power.

• 12.5 dB LFOM

[4]

Applications

• Front-end LNA Q2 and Q3, driver or

pre-driver amplifier for Cellular/

PCS and WCDMA wireless

infrastructure

• Driver amplifier for WLAN,

WLL/RLL and MMDS applications

• General purpose discrete E-pHEMT

for other high linearity applications

ATF-521P8 Related Products

	ATF-521P8	ATF-521P8-BLK	ATF-521P8-TR2	ATF-521P8-TR1
Description	High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package	High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package	High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package	High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package

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