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VP0104N3-P002

Description
MOSFET 40V 8Ohm
Categorysemiconductor    Discrete semiconductor   
File Size556KB,5 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
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VP0104N3-P002 Overview

MOSFET 40V 8Ohm

VP0104N3-P002 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerMicrochip
Product CategoryMOSFET
RoHSN
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-92-3
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 40 V
Id - Continuous Drain Current- 250 mA
Rds On - Drain-Source Resistance8 Ohms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Pd - Power Dissipation1 W
Channel ModeEnhancement
Transistor Type1 P-Channel
TypeFET
NumOfPackaging1
Factory Pack Quantity2000
Typical Turn-Off Delay Time8 ns
Typical Turn-On Delay Time4 ns
Unit Weight0.007760 oz
Supertex inc.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
High input impedance and high gain
Excellent thermal stability
Integral source-to-drain diode
VP0104
Features
General Description
The Supertex VP0104 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from
thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
Motor controls
Converters
Amplifiers
Switches
Applications
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
VP0104
Package
TO-92
VP0104N3-G
NW
(Die in wafer form)
Wafer / Die Options
NJ
(Die on adhesive tape)
ND
(Die in waffle pack)
VP1504NW
VP1504NJ
VP1504ND
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF15 for layout and dimensions.
Product Summary
Device
VP0104N3-G
BV
DSS
/BV
DGS
(V)
Pin Configuration
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(mA)
-40
8.0
-500
DRAIN
SOURCE
GATE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Value
BV
DSS
BV
DGS
±20V
-55°C to +150°C
TO-92 (N3)
Product Marking
SiV P
01 04
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
Absolute Maximum Ratings are those values beyond which damage to the
device may occur. Functional operation under these conditions is not implied.
Continuous operation of the device at the absolute rating level may affect
device reliability. All voltages are referenced to device ground.
Package may or may not include the following marks: Si or
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com

VP0104N3-P002 Related Products

VP0104N3-P002 VP0104N3-G-P003 VP0104N3-G-P014 VP0104N3 VP0104N3-G P005 VP0104N3-G P002
Description MOSFET 40V 8Ohm MOSFET N-CH Enhancmnt Mode MOSFET MOSFET N-CH Enhancmnt Mode MOSFET MOSFET 40V 8Ohm MOSFET N-CH Enhancmnt Mode MOSFET MOSFET N-CH Enhancmnt Mode MOSFET
Product Category MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET
Configuration Single Single Single Single Single Single
Product Attribute Attribute Value Attribute Value Attribute Value Attribute Value - -
Manufacturer Microchip Microchip Microchip Microchip - -
RoHS N Details Details N - -
Technology Si Si Si Si - -
Mounting Style Through Hole Through Hole Through Hole Through Hole - -
Package / Case TO-92-3 TO-92-3 TO-92-3 TO-92-3 - -
Number of Channels 1 Channel 1 Channel 1 Channel 1 Channel - -
Transistor Polarity P-Channel P-Channel P-Channel P-Channel - -
Vds - Drain-Source Breakdown Voltage - 40 V - 40 V - 40 V - 40 V - -
Id - Continuous Drain Current - 250 mA - 250 mA - 250 mA - 250 mA - -
Rds On - Drain-Source Resistance 8 Ohms 15 Ohms 15 Ohms 8 Ohms - -
Vgs - Gate-Source Voltage 20 V 20 V 20 V 20 V - -
Minimum Operating Temperature - 55 C - 55 C - 55 C - 55 C - -
Maximum Operating Temperature + 150 C + 150 C + 150 C + 150 C - -
Pd - Power Dissipation 1 W 1 W 1 W 1 W - -
Channel Mode Enhancement Enhancement Enhancement Enhancement - -
Transistor Type 1 P-Channel 1 P-Channel 1 P-Channel 1 P-Channel - -
Factory Pack Quantity 2000 2000 2000 1000 - -
Typical Turn-Off Delay Time 8 ns 8 ns 8 ns 8 ns - -
Typical Turn-On Delay Time 4 ns 4 ns 4 ns 4 ns - -
Unit Weight 0.007760 oz 0.016000 oz 0.016000 oz 0.007760 oz - -
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