Supertex inc.
P-Channel Enhancement-Mode
Vertical DMOS FETs
►
Free from secondary breakdown
►
Low power drive requirement
►
Ease of paralleling
►
Low C
ISS
and fast switching speeds
►
High input impedance and high gain
►
Excellent thermal stability
►
Integral source-to-drain diode
VP0104
Features
General Description
The Supertex VP0104 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free from
thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
►
Motor controls
►
Converters
►
Amplifiers
►
Switches
Applications
►
Power supply circuits
►
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
VP0104
Package
TO-92
VP0104N3-G
NW
(Die in wafer form)
Wafer / Die Options
NJ
(Die on adhesive tape)
ND
(Die in waffle pack)
VP1504NW
VP1504NJ
VP1504ND
For packaged products, -G indicates package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’).
Refer to Die Specification VF15 for layout and dimensions.
Product Summary
Device
VP0104N3-G
BV
DSS
/BV
DGS
(V)
Pin Configuration
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(mA)
-40
8.0
-500
DRAIN
SOURCE
GATE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Value
BV
DSS
BV
DGS
±20V
-55°C to +150°C
TO-92 (N3)
Product Marking
SiV P
01 04
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
Absolute Maximum Ratings are those values beyond which damage to the
device may occur. Functional operation under these conditions is not implied.
Continuous operation of the device at the absolute rating level may affect
device reliability. All voltages are referenced to device ground.
Package may or may not include the following marks: Si or
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
VP0104
Thermal Characteristics
Package
TO-92
(continuous)
(mA)
I
D
†
(pulsed)
(mA)
I
D
Power Dissipation
@T
C
= 25
O
C
(W)
O
( C/W)
θ
jc
( C/W)
O
θ
ja
(mA)
I
DR
†
(mA)
I
DRM
-250
-800
1.0
125
170
-250
-800
Notes:
† I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T
= 25°C unless otherwise specified)
A
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage current
Zero gate voltage drain current
Min
-40
-1.5
-
-
-
-
-0.15
-0.5
-
-
-
150
-
-
-
-
-
-
-
-
-
Typ
-
-
5.8
-1.0
-
-
-0.25
-1.2
11
6.0
0.55
190
45
22
3.0
4.0
3.0
8.0
4.0
-1.2
400
Max
-
-3.5
6.5
-100
-10
-1.0
-
-
15
8.0
1.0
-
60
30
8.0
6.0
10
12
10
-2.0
-
Units
V
V
mV/
O
C
nA
µA
mA
A
Ω
%/
O
C
mmho
pF
Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= ±20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= -5.0V, V
DS
= -25V
V
GS
= -10V, V
DS
= -25V
V
GS
= -5.0V, I
D
= -100mA
V
GS
= -10V, I
D
= -500mA
V
GS
= -10V, I
D
= -500mA
V
DS
= -25V, I
D
= -500mA
V
GS
= 0V,
V
DS
= -25V,
f = 1.0MHz
V
DD
= -25V,
I
D
= -500mA,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= -1.0A
V
GS
= 0V, I
SD
= -1.0A
On-state drain current
Static drain-to-source
on-state resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
ns
V
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
10%
90%
t
(OFF)
t
r
t
d(OFF)
t
f
INPUT
-10V
Pulse
Generator
R
GEN
D.U.T.
INPUT
t
(ON)
t
d(ON)
0V
Output
R
L
OUTPUT
VDD
90%
10%
90%
10%
V
DD
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
2
Tel: 408-222-8888
www.supertex.com
VP0104
Typical Performance Curves
-2.0
Output Characteristics
-1.0
Saturation Characteristics
V
GS
= -10V
-9V
-8V
-7V
-1.6
-0.8
I
D
(amperes)
I
D
(amperes)
-1.2
V
GS
= -10V
-9V
-0.6
-0.8
-8V
-7V
-0.4
-6V
-0.2
-0.4
-6V
-5V
-4V
-5V
-4V
0
-2
-4
-6
-8
-10
0
0
-10
-20
-30
-40
0
V
DS
(volts)
V
DS
(volts)
250
Transconductance vs. Drain Current
V
DS
= -25V
T
A
= -55
O
C
T
A
= 25
O
C
P
D
(watts)
T
A
= 125
O
C
2.0
Power Dissipation vs. Case Temperature
200
G
FS
(millisiemens)
150
1.0
TO-92
100
50
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
0
0
25
50
75
100
125
150
I
D
(amperes)
T
C
( C)
O
-10
Maximum Rated Safe Operating Area
1.0
Thermal Response Characteristics
Thermal Resistance (normalized)
0.8
-1.0
I
D
(amperes)
0.6
-0.1
TO-92 (DC)
0.4
0.2
-0.01
-0.1
T
C
= 25
O
C
-1.0
-10
-100
TO-92
P
D
= 1W
T
C
= 25
O
C
0.001
0.01
0.1
1.0
10
0
V
DS
(volts)
t
P
(seconds)
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
3
Tel: 408-222-8888
www.supertex.com
VP0104
Typical Performance Curves
(cont.)
1.10
BV
DSS
Variation with Temperature
50
On-Resistance vs. Drain Current
V
GS
= -5.0V
V
GS
= -10V
1.06
40
BV
DSS
(normalized)
R
DS(ON)
(ohms)
1.02
30
0.98
20
0.94
10
0.90
-50
0
50
100
150
0
0
-0.3
-0.6
-0.9
-1.2
-1.5
T
j
(
O
C)
I
D
(amperes)
-1.0
Transfer Characteristics
T
A
= -55
O
C
V
DS
= -25V
-1.6
V
(th)
and R
DS
Variation with Temperature
R
DS(ON)
@ 10V, -0.5A
R
DS(ON)
@ -5V, -0.1A
-1.6
-0.8
T
A
= 25
O
C
V
GS(th)
(normalized)
-1.4
-0.6
-1.2
-1.2
-1.0
-1.0
-0.8
-0.4
T
A
= 125
O
C
-0.2
V
(th)
@ -1.0mA
0
0
-2
-4
-6
-8
-10
0.6
-50
0
50
100
-0.8
150
V
GS
(volts)
T
j
(
O
C)
100
Capacitance vs. Drain-to-Source Voltage
f = 1MHz
-10
Gate Drive Dynamic Characteristics
V
DS
= -10V
70pf
70pf
V
DS
= -40V
-8
75
C (picofarads)
50
V
GS
(volts)
-6
C
ISS
25
-4
C
OSS
C
RSS
0
0
-10
-20
-30
-40
-2
45pf
0
0
0.2
0.4
0.6
0.8
1.0
V
DS
(volts)
Q
G
(nanocoulombs)
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
4
Tel: 408-222-8888
www.supertex.com
R
DS(ON)
(normalized)
-1.4
VP0104
3-Lead TO-92 Package Outline (N3)
D
Seating
Plane
A
1
2
3
L
e1
e
b
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
†
-
.022
†
c
.014
†
-
.022
†
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version E041009.
(The package drawing (s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
(website: http//www.supertex.com)
©2011
Supertex inc.
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-VP0104
B062211
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
5
Supertex inc.
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