6. Distribution data sample size is 398 samples taken from 4 different wafers. Future wafers allocated to this product may have nominal values anywhere
between the upper and lower limits. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match
and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual measurements.
2
ATF-551M4 Electrical Specifications
T
A
= 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Vgs
Vth
Idss
Gm
Igss
NF
Gain
OIP3
P1dB
Parameter and Test Condition
Operational Gate Voltage
Threshold Voltage
Saturated Drain Current
Transconductance
Gate Leakage Current
Noise Figure
[1]
Gain
[1]
Output 3
rd
Order
Intercept Point
[1]
1dB Compressed
Output Power
[1]
f = 2 GHz
f = 2 GHz
f = 2 GHz
f = 2 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 2 mA
Vds = 2.7V, Vgs = 0V
Vds = 2.7V, gm =
∆Idss/∆Vgs;
∆Vgs
= 0.75 – 0.7 = 0.05V
Vgd = Vgs = -2.7V
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
Vds = 2.7V, Ids = 10 mA
Vds = 3V, Ids = 20 mA
Units
V
V
µA
mmho
µA
dB
dB
dB
dB
dBm
dBm
dBm
dBm
Min.
0.3
0.18
—
110
—
—
—
15.5
—
22
—
—
—
Typ.
0.47
0.37
0.1
220
—
0.5
0.5
17.5
18.0
24.1
30.0
14.6
16.0
Max.
0.65
0.53
3
285
95
0.9
—
18.5
—
—
—
—
—
Notes:
1. Measurements obtained using production test board described in Figure 5. Typical values were determined from a sample size of 398 parts from
4 wafers.
Input
50Ω Input
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Input
Matching Circuit
Γ_mag
= 0.3
Γ_ang
= 11°
(0.3 dB loss)
DUT
Output
Matching Circuit
Γ_mag
= 0.3
Γ_ang
= 9°
(0.9 dB loss)
50Ω Output
Transmission
Line Including
Gate Bias T
(0.3 dB loss)
Output
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Gain, P1dB, OIP3, and IIP3 measurements. This circuit represents a
trade-off between an optimal noise match, maximum OIP3 match and associated impedance matching circuit losses. Circuit losses have been de-
embedded from actual measurements.
ATF-551M4 Electrical Specifications
(see notes 2 and 3, as indicated)
Symbol
Fmin
Parameter and Test Condition
Minimum Noise Figure
[2]
f = 900 GHz
f = 2 GHz
f = 3.9 GHz
f = 5.8 GHz
f = 900 GHz
f = 2 GHz
f = 3.9 GHz
f = 5.8 GHz
f = 900 GHz
f = 3.9 GHz
f = 5.8 GHz
f = 900 GHz
f = 3.9 GHz
f = 5.8 GHz
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Vds = 2.7V, Ids = 10 mA
Units
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
0.27
0.41
0.61
0.88
21.8
17.9
14.2
12.0
22.1
24.3
24.5
14.3
14.5
14.3
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Ga
Associated Gain
[2]
OIP3
Output 3
rd
Order
Intercept Point
[3]
1dB Compressed
Output Power
[3]
P1dB
Notes:
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. Measurements taken above and below 2 GHz was made using a double stub tuner at the input tuned for low noise and a double stub tuner at the
output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
3
ATF-551M4 Typical Performance Curves
26
25
24
GAIN (dB)
Fmin (dB)
23
22
21
20
19
18
0
5
10
15
20
25
30
35
I
ds
(mA)
2V
2.7V
3V
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0
5
10
15
20
25
30
35
I
ds
(mA)
OIP3 (dBm)
2V
2.7V
3V
32
30
28
26
24
22
20
18
16
0
5
10
15
20
25
30
35
I
ds
(mA)
2V
2.7V
3V
Figure 6. Gain vs. I
ds
and V
ds
at 900 MHz
[1]
.
Figure 7. Fmin vs. I
ds
and V
ds
at 900 MHz
[2]
.
Figure 8. OIP3 vs. I
ds
and V
ds
at 900 MHz
[1]
.
7
6
5
P1dB (dBm)
2V
2.7V
3V
18
17
16
15
14
13
12
11
10
35
9
0
5
10
15
20
25
2V
2.7V
3V
IIP3 (dBm)
4
3
2
1
0
-1
-2
0
5
10
15
20
25
30
30
35
I
ds
(mA)
I
dq
(mA)
Figure 9. IIP3 vs. I
ds
and V
ds
at 900 MHz
[1]
.
Figure 10. P1dB vs. I
dq
and V
ds
at 900 MHz
[1]
.
Notes:
1. Measurements at 900MHz were made using an ICM fixture with a double stub tuner at the input tuned for low noise and a double stub tuner at the
output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the
drain current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in
higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached.
4
ATF-551M4 Typical Performance Curves,
continued
20
0.6
0.5
0.4
GAIN (dB)
18
Fmin (dB)
0.3
0.2
16
2V
2.7V
3V
36
19
32
OIP3 (dBm)
2V
2.7V
3V
28
17
24
0.1
0
20
2V
2.7V
3V
15
0
5
10
15
20
25
30
35
I
ds
(mA)
16
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
I
ds
(mA)
I
ds
(mA)
Figure 11. Gain vs. I
ds
and V
ds
at 2 GHz
[1]
.
Figure 12. Fmin vs. I
ds
and V
ds
at 2 GHz
[2]
.
Figure 13. OIP3 vs. I
ds
and V
ds
at 2 GHz
[1]
.
18
16
14
17
16
15
IIP3 (dBm)
12
P1dB (dB)
10
8
6
4
2
0
0
5
10
15
20
25
2V
2.7V
3V
14
13
12
11
10
2V
2.7V
3V
30
35
0
5
10
15
20
25
30
35
I
ds
(mA)
I
dq
(mA)
Figure 14. IIP3 vs. I
ds
and V
ds
at 2 GHz
[1]
.
Figure 15. P1dB vs. I
dq
and V
ds
at 2 GHz
[1]
.
Notes:
1. Measurements at 2 GHz with biasing 2.7V, 10 mA were made on a fixed tuned production test board that was tuned for optimal OIP3 match with
reasonable noise figure. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken other than 2.7V, 10 mA biasing was made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. The Fmin values are based on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
3. P1dB measurements are performed with passive biasing. Quiescent drain current, Idsq, is set with zero RF drive applied. As P1dB is approached, the
drain current may increase or point. At lower values of Idsq, the device is running close to class B as power output approaches P1dB. This results in
higher P1dB and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with
active biasing. As an example, at a VDS = 2.7V and Idsq = 5 mA, Id increases to 15 mA as a P1dB of +14.5 dBm is approached.
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Embedded System
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