BC817-16Q /-40Q
45V NPN SMALL SIGNAL TRANSISTOR IN SOT23
Description
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirements of Automotive Applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, ―Green‖ Molding Compound; UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-
STD-202, Method 208
Weight 0.008 grams (Approximate)
Features
BV
CEO
> 45V
I
C
= 0.5A Continuous Collector Current
I
CM
= 1A Peak Pulse Current
Complementary PNP Types: BC807-16
Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
For switching and AF Amplifier Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
SOT23
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Notes 4 and 5)
Part number
BC817-16Q-7-F
BC817-40Q-7-F
BC817-40Q-13-F
Notes:
Compliance
Automotive
Automotive
Automotive
Marking
K6A
K6C
K6C
Reel size (inches)
7
7
13
Tape width (mm)
8
8
8
Quantity per reel
3,000
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT23
XXX = Product Type Marking Code (See table above)
YM = Date Code Marking
Y = Year ex: C = 2015
M = Month ex: 9 = September
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
2016
D
Feb
2
2017
E
Mar
3
2018
F
Apr
4
2019
G
May
5
2020
H
Jun
6
2021
I
Jul
7
2022
J
Aug
8
2023
K
Sep
9
2024
L
Oct
O
2025
M
Nov
N
2026
N
Dec
D
March 2016
BC817-16Q /-40Q
Document number: DS38331 Rev. 2 - 2
1 of 7
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© Diodes Incorporated
BC817-16Q /-40Q
Absolute Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
Value
50
45
5.0
0.5
1.0
200
Unit
V
V
V
A
A
mA
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 6)
(Note 7)
(Note 6)
(Note 7)
(Note 8)
Symbol
P
D
R
θJA
R
θJL
T
J,
T
STG
Value
310
350
403
357
350
-65 to +150
Unit
mW
°
C/W
°
C/W
°
C
ESD Ratings
(Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
8,000
400
Unit
V
V
JEDEC Class
3B
C
6. For a device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper; device is measured under still air
conditions whilst operating in a steady-state.
7. Same as Note 6, except mounted on 15mm x 15mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
BC817-16Q /-40Q
Document number: DS38331 Rev. 2 - 2
2 of 7
www.diodes.com
March 2016
© Diodes Incorporated
BC817-16Q /-40Q
Thermal Characteristics and Derating Information
0.4
400
Max Power Dissipation (W)
Thermal Resistance ( C/W)
350
300
250
200
150
100
50
0
µ
100μ 1m
10m 100m
D=0.2
D=0.5
D=0.1
Single Pulse
D=0.05
0.3
0.2
0.1
0.0
0
25
50
75
100
o
125
150
o
1
10
100
1k
Temperature ( C)
Pulse Width (s)
Derating Curve
10
Transient Thermal Impedance
Max Power Dissipation (W)
Single Pulse. T
amb
=25 C
o
1
0.1
10m
100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
BC817-16Q /-40Q
Document number: DS38331 Rev. 2 - 2
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March 2016
© Diodes Incorporated
BC817-16Q /-40Q
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain (Note 10)
Collector-Emitter Saturation Voltage (Note 10)
Base-Emitter Voltage (Note 10)
Gain Bandwidth Product
Collector-Base Capacitance
Note:
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CES
I
EBO
BC817-16Q
BC817-40Q
BC817-16Q
BC817-40Q
h
FE
V
CE(SAT)
V
BE
f
T
C
CBO
Min
50
45
5
—
—
100
250
60
170
—
—
100
—
Typ
—
—
—
—
—
—
—
—
—
—
Max
—
—
—
100
5.0
100
250
600
Unit
V
V
V
nA
µA
nA
—
Test Condition
I
C
= 100µA
I
C
= 10mA
I
C
= 100µA
V
CE
= 45V
V
CE
= 25V, T
J
= +150°
C
V
EB
= 5.0V
V
CE
= 1.0V, I
C
= 100mA
V
CE
= 1.0V, I
C
= 300mA
0.7
1.2
—
12
V
V
MHz
pF
I
C
= 500mA, I
B
= 50mA
V
CE
= 1.0V, I
C
= 300mA
V
CE
= 5.0V, I
C
= 10mA,
f = 50MHz
V
CB
= 10V, f = 1.0MHz
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
BC817-16Q /-40Q
Document number: DS38331 Rev. 2 - 2
4 of 7
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March 2016
© Diodes Incorporated
BC817-16Q /-40Q
Typical Electrical Characteristics
500
(@T
A
= +25° unless otherwise specified.)
C,
100
I
C
, COLLECTOR CURRENT (mA)
400
I
C
, COLLECTOR CURRENT (mA)
80
300
60
200
40
100
20
0
1
2
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 1 Typical Collector Current vs. Collector-Emitter Voltage
1,000
V
CE
= 1V
0
10
20
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Figure 2 Typical Collector Current vs. Collector-Emitter Voltage
0
0
0.5
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.4
I
C
/ I
B
= 10
h
FE
, DC CURRENT GAIN
150°
C
T
A
= 25°
C
-50°
C
0.3
100
0.2
25°
C
0.1
150°
C
-50°
C
10
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Figure 3 Typical DC Current Gain vs. Collector Current
0.1
0
100
1,000
1
10
I
C
, COLLECTOR CURRENT (mA)
Figure 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.1
1,000
f
T
, GAIN-BANDWIDTH PRODUCT (MHz)
100
10
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
Figure 5 Gain-Bandwidth Product vs. Collector Current
1
BC817-16Q /-40Q
Document number: DS38331 Rev. 2 - 2
5 of 7
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March 2016
© Diodes Incorporated
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