DMT8012LSS
80V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
R
DS(ON)
Max
16.5mΩ @ V
GS
= 10V
80V
20mΩ @ V
GS
= 4.5V
8.8A
I
D
Max
T
A
= +25°C
9.7A
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
High Conversion Efficiency
Low R
DS(ON)
– Minimizes On-State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation N-Channel Enhancement Mode MOSFET is
designed to minimize R
DS(ON)
, yet maintain superior switching
performance. This device is ideal for use in:
Notebook Battery Power Management
Loadswitches
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
D
SO-8
S
S
S
G
D
D
D
D
Top View
Internal Schematic
G
S
Equivalent Circuit
Top View
Ordering Information
(Note 4)
Part Number
DMT8012LSS-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
T8012LS
YY WW
1
4
= Manufacturer’s Marking
T8012LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 16 = 2016)
WW = Week (01 to 53)
DMT8012LSS
Document number: DS38164 Rev. 3 - 2
1 of 7
www.diodes.com
May 2016
© Diodes Incorporated
DMT8012LSS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
t<10s
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%)
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AS
E
AS
Value
80
±20
9.7
7.8
11.6
9.3
3
80
11.6
10.2
Units
V
V
A
A
A
A
A
mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Symbol
P
D
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
1.5
80
48
2
53
37
6.5
-55 to +150
Units
W
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
(Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
ISS
C
OSS
C
RSS
R
G
Q
G
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
t
D(OFF)
t
F
Min
80
—
—
1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
12.7
15
0.9
1,949
177
10
0.7
15
34
6
4.5
4.9
3.8
16.5
3.5
Max
—
1
±100
3
16.5
20
1.2
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 64V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 12A
V
GS
= 4.5V, I
D
= 6A
V
GS
= 0V, I
S
= 20A
V
DS
= 40V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
pF
Ω
nC
V
DS
= 40V, I
D
= 12A
ns
V
DD
= 40V, V
GS
= 10V,
I
D
= 12A, R
G
= 1.6Ω
5. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz. copper, with 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMT8012LSS
Document number: DS38164 Rev. 3 - 2
2 of 7
www.diodes.com
May 2016
© Diodes Incorporated
DMT8012LSS
30.0
V
GS
= 10.0V
I
D
, DRAIN CURRENT (A)
25.0
20.0
15.0
10.0
5.0
0.0
0
0.5
1
1.5
2
2.5
3
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.03
V
GS
= 10V
V
GS
= 4.5V
0.03
V
GS
= 6.0V
V
GS
= 4.5V
V
GS
=4.0V
V
GS
= 3.5V
I
D
, DRAIN CURRENT (A)
V
GS
= 5.0V
25
20
15
10
5
0
1
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
150℃
125℃
85℃
25℃
-55℃
30
V
DS
= 5.0V
V
GS
= 3.0V
0.026
0.022
0.018
I
D
= 6A
I
D
= 12A
0.014
0.01
2
4
6
8
10
12
14
16
18
20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
2.5
2.3
0.025
R
D S(ON )
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
150℃
125℃
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
V
GS
= 10V
I
D
= 12A
0.02
85℃
0.015
25℃
V
GS
= 4.5V
I
D
= 6A
0.01
0.005
0
5
10
15
20
-55℃
25
30
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
0.5
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
May 2016
© Diodes Incorporated
DMT8012LSS
Document number: DS38164 Rev. 3 - 2
3 of 7
www.diodes.com
DMT8012LSS
0.04
2.6
R
D S(ON )
, DRAIN-SOURCE ON-RESISTANCE (
)
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
0.035
0.03
0.025
0.02
V
GS
= 10V
V
GS
= 4.5V
I
D
= 6A
2.4
2.2
2
1.8
1.6
1.4
1.2
1
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
0.8
-50
I
D
= 250µA
I
D
= 1mA
0.015
0.01
0.005
0
-50
I
D
= 12A
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
-25
30
V
GS
= 0V
10
25
I
S
, SOURCE CURRENT (A)
8
20
V
GS
(V)
T
A
= 125
o
C
T
A
= 150
o
C
5
T
A
= -55
o
C
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
0
0
10
20
Q
g
(nC)
Figure 10. Gate Charge
100
f=1MHz
R
DS(ON)
Limited
C
iss
P
W
=100µs
30
40
50
T
A
= 85
o
C
T
A
= 25
o
C
6
15
4
V
DS
= 40V, I
D
= 12A
10
2
10000
C
T
, JUNCTION CAPACITANCE (pF)
100
C
oss
I
D
, DRAIN CURRENT (A)
1000
10
1
10
C
rss
0.1
1
0
5
10 15 20 25 30 35 40 45 50 55 60
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Typical Junction Capacitance
0.01
P
W
=1ms
P
W
=10ms
P
W
=100ms
P
W
=1s
T
J(Max)
= 150℃ T
C
= 25℃
Single Pulse
DUT on 1*MRP Board
V
GS
= 10V
0.1
1
P
W
=10s
DC
10
100
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
May 2016
© Diodes Incorporated
DMT8012LSS
Document number: DS38164 Rev. 3 - 2
4 of 7
www.diodes.com
DMT8012LSS
1
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 95℃/W
Duty Cycle, D = t1 / t2
10
100
1000
r(t), TRANSIENT THERMAL RESISTANCE
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
DMT8012LSS
Document number: DS38164 Rev. 3 - 2
5 of 7
www.diodes.com
May 2016
© Diodes Incorporated
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