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BC557CG

Description
Bipolar Transistors - BJT 100mA 50V PNP
CategoryDiscrete semiconductor    The transistor   
File Size78KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC557CG Overview

Bipolar Transistors - BJT 100mA 50V PNP

BC557CG Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging code29-11
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)320 MHz
Base Number Matches1
BC556B, BC557A, B, C,
BC558B
Amplifier Transistors
PNP Silicon
Features
http://onsemi.com
Pb−Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
BC556
BC557
BC558
Collector - Base Voltage
BC556
BC557
BC558
Emitter - Base Voltage
Collector Current − Continuous
Collector Current
− Peak
Base Current − Peak
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
I
CM
I
BM
P
D
P
D
T
J
, T
stg
V
CBO
−80
−50
−30
−5.0
−100
−200
−200
625
5.0
1.5
12
−55 to +150
Vdc
mAdc
mAdc
mW
mW/°C
W
mW/°C
°C
Symbol
V
CEO
−65
−45
−30
Vdc
Value
Unit
Vdc
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
12
1
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BC
55xx
AYWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
xx
= 6B, 7A, 7B, 7C, or 8B
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1
March, 2007 − Rev. 3
Publication Order Number:
BC556B/D

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Brand Name ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free Lead free Lead free Lead free
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3
Contacts 3 3 3 3 3 3
Manufacturer packaging code 29-11 29-11 29-11 29-11 29-11 29-11
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 45 V 45 V 45 V 45 V 65 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 420 180 420 180 180 180
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e1 e1 e1 e1 e1 e1
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 260 260 260 260 260 260
Polarity/channel type PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 1.5 W 1.5 W 0.625 W 1.5 W 1.5 W 0.625 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal surface Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature 40 40 40 40 40 40
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 320 MHz 320 MHz 320 MHz 320 MHz 280 MHz 320 MHz
Maker - ON Semiconductor ON Semiconductor - ON Semiconductor ON Semiconductor
Factory Lead Time - 1 week 1 week 1 week 1 week 1 week
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