BC556B, BC557A, B, C,
BC558B
Amplifier Transistors
PNP Silicon
Features
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•
Pb−Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
BC556
BC557
BC558
Collector - Base Voltage
BC556
BC557
BC558
Emitter - Base Voltage
Collector Current − Continuous
Collector Current
− Peak
Base Current − Peak
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
I
CM
I
BM
P
D
P
D
T
J
, T
stg
V
CBO
−80
−50
−30
−5.0
−100
−200
−200
625
5.0
1.5
12
−55 to +150
Vdc
mAdc
mAdc
mW
mW/°C
W
mW/°C
°C
Symbol
V
CEO
−65
−45
−30
Vdc
Value
Unit
Vdc
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
12
1
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BC
55xx
AYWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
xx
= 6B, 7A, 7B, 7C, or 8B
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1
March, 2007 − Rev. 3
Publication Order Number:
BC556B/D
BC556B, BC557A, B, C, BC558B
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= −2.0 mAdc, I
B
= 0)
V
(BR)CEO
BC556
BC557
BC558
V
(BR)CBO
BC556
BC557
BC558
V
(BR)EBO
BC556
BC557
BC558
I
CES
BC556
BC557
BC558
BC556
BC557
BC558
−
−
−
−
−
−
−2.0
−2.0
−2.0
−
−
−
−100
−100
−100
−4.0
−4.0
−4.0
nA
mA
−5.0
−5.0
−5.0
−
−
−
−
−
−
−80
−50
−30
−
−
−
−
−
−
V
−65
−45
−30
−
−
−
−
−
−
V
V
Symbol
Min
Typ
Max
Unit
Collector −Base Breakdown Voltage
(I
C
= −100
mAdc)
Emitter −Base Breakdown Voltage
(I
E
= −100
mAdc,
I
C
= 0)
Collector−Emitter Leakage Current
(V
CES
= −40 V)
(V
CES
= −20 V)
(V
CES
= −20 V, T
A
= 125°C)
ON CHARACTERISTICS
DC Current Gain
(I
C
= −10
mAdc,
V
CE
= −5.0 V)
(I
C
= −2.0 mAdc, V
CE
= −5.0 V)
h
FE
A Series Device
B Series Devices
C Series Devices
BC557
A Series Device
B Series Devices
C Series Devices
A Series Device
B Series Devices
C Series Devices
V
CE(sat)
−
−
−
V
BE(sat)
−
−
V
BE(on)
−0.55
−
−0.62
−0.7
−0.7
−0.82
−0.7
−1.0
−
−
V
−0.075
−0.3
−0.25
−0.3
−0.6
−0.65
V
−
−
−
120
120
180
420
−
−
−
90
150
270
−
170
290
500
120
180
300
−
−
−
800
220
460
800
−
−
−
V
−
(I
C
= −100 mAdc, V
CE
= −5.0 V)
Collector −Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −0.5 mAdc)
(I
C
= −10 mAdc, I
B
= see Note 1)
(I
C
= −100 mAdc, I
B
= −5.0 mAdc)
Base −Emitter Saturation Voltage
(I
C
= −10 mAdc, I
B
= −0.5 mAdc)
(I
C
= −100 mAdc, I
B
= −5.0 mAdc)
Base−Emitter On Voltage
(I
C
= −2.0 mAdc, V
CE
= −5.0 Vdc)
(I
C
= −10 mAdc, V
CE
= −5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= −10 mA, V
CE
= −5.0 V, f = 100 MHz)
f
T
BC556
BC557
BC558
C
ob
NF
BC556
BC557
BC558
h
fe
BC557
A Series Device
B Series Devices
C Series Devices
125
125
240
450
−
−
−
−
900
260
500
900
−
−
−
2.0
2.0
2.0
10
10
10
−
−
−
−
280
320
360
3.0
−
−
−
6.0
MHz
Output Capacitance
(V
CB
= −10 V, I
C
= 0, f = 1.0 MHz)
Noise Figure
(I
C
= −0.2 mAdc, V
CE
= −5.0 V,
R
S
= 2.0 kW, f = 1.0 kHz,
Df
= 200 Hz)
Small−Signal Current Gain
(I
C
= −2.0 mAdc, V
CE
= 5.0 V, f = 1.0 kHz)
pF
dB
−
1. I
C
= −10 mAdc on the constant base current characteristics, which yields the point I
C
= −11 mAdc, V
CE
= −1.0 V.
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BC556B, BC557A, B, C, BC558B
BC557/BC558
2.0
hFE , NORMALIZED DC CURRENT GAIN
1.5
1.0
0.7
0.5
V
CE
= −10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
−1.0
−0.9
−0.8
−0.7
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
0.2
−0.2
−0.5 −1.0 −2.0
−5.0 −10 −20
−50
I
C
, COLLECTOR CURRENT (mAdc)
−100 −200
0
−0.1 −0.2
V
CE(sat)
@ I
C
/I
B
= 10
−0.5 −1.0 −2.0
−5.0 −10 −20
I
C
, COLLECTOR CURRENT (mAdc)
−50 −100
V
BE(on)
@ V
CE
= −10 V
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
0.3
Figure 1. Normalized DC Current Gain
Figure 2. “Saturation” and “On” Voltages
θ
VB , TEMPERATURE COEFFICIENT (mV/
°
C)
VCE , COLLECTOR−EMITTER VOLTAGE (V)
−2.0
T
A
= 25°C
−1.6
−1.2
I
C
=
−10 mA
I
C
= −50 mA
I
C
= −20 mA
I
C
= −200 mA
I
C
= −100 mA
1.0
−55°C to +125°C
1.2
1.6
2.0
2.4
2.8
−0.8
−0.4
0
−0.02
−0.1
−1.0
I
B
, BASE CURRENT (mA)
−10 −20
−0.2
−10
−1.0
I
C
, COLLECTOR CURRENT (mA)
−100
Figure 3. Collector Saturation Region
f T, CURRENT−GAIN − BANDWIDTH PRODUCT (MHz)
Figure 4. Base−Emitter Temperature Coefficient
10
7.0
C, CAPACITANCE (pF)
5.0
C
ob
C
ib
T
A
= 25°C
400
300
200
150
100
80
60
40
30
20
−0.5
−1.0
−2.0 −3.0
−5.0
−10
−20
−30
−50
V
CE
= −10 V
T
A
= 25°C
3.0
2.0
1.0
−0.4 −0.6
−1.0
−2.0
−4.0 −6.0
−10
−20 −30 −40
V
R
, REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current−Gain − Bandwidth Product
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3
BC556B, BC557A, B, C, BC558B
BC556
−1.0
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= −5.0 V
T
A
= 25°C
2.0
1.0
0.5
0.2
−0.1 −0.2
−1.0 −2.0 −5.0 −10 −20 −50 −100 −200
I
C
, COLLECTOR CURRENT (mA)
V, VOLTAGE (VOLTS)
T
J
= 25°C
−0.8
V
BE(sat)
@ I
C
/I
B
= 10
−0.6
V
BE
@ V
CE
= −5.0 V
−0.4
−0.2
V
CE(sat)
@ I
C
/I
B
= 10
0
−0.2
−0.5
−50 −100 −200
−5.0 −10 −20
−1.0 −2.0
I
C
, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
Figure 8. “On” Voltage
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
θ
VB, TEMPERATURE COEFFICIENT (mV/
°
C)
−2.0
−1.0
−1.6
I
C
=
−10 mA
−20 mA
−50 mA
−100 mA −200 mA
−1.4
−1.2
−1.8
q
VB
for V
BE
−55°C to 125°C
−0.8
−2.2
−0.4
T
J
= 25°C
0
−0.02
−0.05 −0.1 −0.2
−0.5 −1.0 −2.0
I
B
, BASE CURRENT (mA)
−5.0
−10
−20
−2.6
−3.0
−0.2
−0.5 −1.0
−50
−2.0
−5.0 −10 −20
I
C
, COLLECTOR CURRENT (mA)
−100 −200
Figure 9. Collector Saturation Region
Figure 10. Base−Emitter Temperature Coefficient
f T, CURRENT−GAIN − BANDWIDTH PRODUCT
40
T
J
= 25°C
C, CAPACITANCE (pF)
20
C
ib
500
V
CE
= −5.0 V
200
100
50
20
−100
−1.0
−10
I
C
, COLLECTOR CURRENT (mA)
10
8.0
6.0
4.0
2.0
−0.1 −0.2
C
ob
−0.5
−1.0 −2.0
−5.0 −10 −20
V
R
, REVERSE VOLTAGE (VOLTS)
−50 −100
Figure 11. Capacitance
Figure 12. Current−Gain − Bandwidth Product
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4
BC556B, BC557A, B, C, BC558B
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
D = 0.5
0.2
0.05
SINGLE PULSE
SINGLE PULSE
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Z
qJC
(t) = (t) R
qJC
R
qJC
= 83.3°C/W MAX
Z
qJA
(t) = r(t) R
qJA
R
qJA
= 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
R
qJC
(t)
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k
10
Figure 13. Thermal Response
−200
1s
IC, COLLECTOR CURRENT (mA)
−100
−50
T
A
= 25°C
T
J
= 25°C
3 ms
The safe operating area curves indicate I
C
−V
CE
limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
The data of Figure 14 is based upon T
J(pk)
= 150°C; T
C
or T
A
is
variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T
J(pk)
≤
150°C. T
J(pk)
may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power than can
be handled to values less than the limitations imposed by second
breakdown.
−10
−5.0
−2.0
−1.0
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−5.0
−10
−30 −45 −65 −100
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Active Region − Safe Operating Area
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