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BSP320SH6433XTMA1

Description
MOSFET SIPMOS Sm-Signal 60V 120mOhm 2.9A
CategoryDiscrete semiconductor    The transistor   
File Size487KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

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BSP320SH6433XTMA1 Overview

MOSFET SIPMOS Sm-Signal 60V 120mOhm 2.9A

BSP320SH6433XTMA1 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codecompliant
Other featuresAVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)60 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)2.9 A
Maximum drain-source on-resistance0.12 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)11.6 A
GuidelineAEC-Q101
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Base Number Matches1
BSP320S
Pb-free lead plating; RoHS compliant
Qualified according to AEC Q101
Halogen­free according to IEC61249­2­21
Tape and Reel
PG-SOT223
H6327:
1000pcs/r
PG-SOT223
H6433:
4000pcs/r
Packaging
Non dry
1
PIN
Non dry
Rev 2.5
2012-11-28
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