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BUK763R1-40B118

Description
MOSFET HIGH PERF TRENCHMOS
Categorysemiconductor    Discrete semiconductor   
File Size181KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK763R1-40B118 Overview

MOSFET HIGH PERF TRENCHMOS

BUK763R1-40B118 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current75 A
Rds On - Drain-Source Resistance3.1 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationSingle
Pd - Power Dissipation300 W
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height4.5 mm
Length10.3 mm
Transistor Type1 N-Channel
Width9.4 mm
Fall Time90 ns
NumOfPackaging3
Rise Time82 ns
Factory Pack Quantity800
Typical Turn-Off Delay Time141 ns
Typical Turn-On Delay Time38 ns
D2
PA
K
BUK763R1-40B
N-channel TrenchMOS standard level FET
Rev. 03 — 8 February 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
j
25 °C; T
j
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 3;
see
Figure 1
T
mb
= 25 °C; see
Figure 2
[1]
Min
-
-
-
Typ
-
-
-
Max Unit
40
75
300
V
A
W
Static characteristics
R
DSon
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 11;
see
Figure 12
-
2.6
3.1
mΩ
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