BLF2425M7L100;
BLF2425M7LS100
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz
to 2400 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
IS-95
1 carrier W-CDMA
[1]
[2]
f
(MHz)
2300 to 2400
2300 to 2400
I
Dq
(mA)
900
900
V
DS
(V)
28
28
P
L(AV)
(W)
20
30
G
p
(dB)
18
18.7
D
(%)
27
33
ACPR
885k
ACPR
5M
(dBc)
46
[1]
-
(dBc)
-
40
[2]
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is
3.84 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for low memory effects providing excellent digital pre-distortion capability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for industrial and multi carrier applications in the 2300 MHz to
2400 MHz frequency range
BLF2425M7L(S)100
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF2425M7L100 (SOT502A)
1
3
2
1
2
sym112
3
BLF2425M7LS100 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
1
2
sym112
3
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF2425M7L100
BLF2425M7LS100
-
-
flanged ceramic package; 2 mounting holes; 2 leads
earless flanged ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
65
+13
+150
200
Unit
V
V
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 100 W
Typ
0.3
Unit
K/W
BLF2425M7L100_2425M7LS100#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
2 of 13
BLF2425M7L(S)100
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
Conditions
V
GS
= 0 V; I
D
= 1 mA
V
DS
= 10 V; I
D
= 150 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 5.35 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5.25 A
Min
65
1.5
-
Typ
-
1.8
-
Max Unit
-
2.3
5
-
500
-
V
V
A
A
nA
S
25.1 29
-
-
-
-
0.1
10.5 -
Table 7.
RF characteristics
Test signal: single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth is 1.2288 MHz; f
1
= 2300 MHz;
f
2
= 2400 MHz; RF performance at V
DS
= 28 V; I
Dq
= 900 mA; T
case
= 25
C; unless otherwise
specified; in a class-AB production test circuit.
Symbol
G
p
RL
in
D
ACPR
885k
Parameter
power gain
input return loss
drain efficiency
Conditions
P
L(AV)
= 20 W
P
L(AV)
= 20 W
P
L(AV)
= 20 W
Min
17.3
-
22
-
Typ
18
14
27
46
Max Unit
-
-
-
40
dB
dB
%
dBc
adjacent channel power ratio (885 kHz) P
L(AV)
= 20 W
7. Test information
7.1 Ruggedness in class-AB operation
The BLF2425M7L100 and BLF2425M7LS100 are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 28 V; I
Dq
= 900 mA; P
L
= 100 W (CW); f = 2300 MHz.
BLF2425M7L100_2425M7LS100#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
3 of 13
BLF2425M7L(S)100
Power LDMOS transistor
7.2 Graphical data
7.2.1 Single carrier IS-95
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
001aan495
001aan496
19.5
G
p
(dB)
18.5
(2)
50
η
D
(%)
40
(1)
(2)
(1)
30
20
17.5
10
16.5
0
20
40
60
P
L
(W)
80
0
0
20
40
60
P
L
(W)
80
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 1.
Power gain as a function of output power;
typical values
-20
001aan497
Fig 2.
Drain efficiency as a function of output power;
typical values
-30
001aan498
APCR
885k
(dBc)
-30
(2)
APCR
1980k
(dBc)
-40
-40
(1)
-50
(2)
(1)
-50
-60
-60
-70
-70
0
20
40
60
P
L
(W)
80
-80
0
20
40
60
P
L
(W)
80
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 3.
Adjacent channel power ratio (885 kHz) as a
function of output power; typical values
Fig 4.
Adjacent channel power ratio (1980 kHz) as a
function of output power; typical values
BLF2425M7L100_2425M7LS100#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
4 of 13
BLF2425M7L(S)100
Power LDMOS transistor
12
PAR
(dB)
8
001aan499
200
P
L(M)
(W)
160
(1)
(2)
001aan500
120
(1)
80
4
(2)
40
0
0
20
40
60
P
L
(W)
80
0
0
20
40
60
P
L
(W)
80
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 5.
Peak-to-average power ratio as a function of
output power; typical values
Fig 6.
Peak power as a function of output power;
typical values
7.2.2 Pulsed CW
001aan501
001aan502
19.5
G
p
(dB)
18.5
(2)
60
η
D
(%)
50
(2)
(1)
40
(1)
30
17.5
20
16.5
0
40
80
120
P
L
(W)
160
10
0
40
80
120
P
L
(W)
160
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
V
DS
= 28 V; I
Dq
= 900 mA.
(1) f = 2300 MHz
(2) f = 2400 MHz
Fig 7.
Power gain as a function of output power;
typical values
Fig 8.
Drain efficiency as a function of output power;
typical values
BLF2425M7L100_2425M7LS100#2
All information provided in this document is subject to legal disclaimers.
© Ampleon The Netherlands B.V. 2015. All rights reserved.
Product data sheet
Rev. 2 — 1 September 2015
5 of 13
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