Polar3
TM
HiperFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFA26N50P3
IXFP26N50P3
IXFQ26N50P3
IXFH26N50P3
TO-263 AA (IXFA)
V
DSS
I
D25
R
DS(on)
= 500V
= 26A
250m
TO-220AB (IXFP)
G
S
D (Tab)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Maximum Lead Temperature for Soldering
Plastic Body for 10s
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25C
Maximum Ratings
500
500
30
40
26
78
13
300
35
500
-55 ... +150
150
-55 ... +150
300
260
V
V
V
V
A
A
A
mJ
V/ns
W
C
C
C
°C
°C
N/lb
Nm/lb.in
g
g
g
g
G
G
D
G
DS
D (Tab)
TO-3P (IXFQ)
S
D (Tab)
TO-247 (IXFH)
D
S
D (Tab)
D
= Drain
Tab = Drain
G = Gate
S = Source
Features
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-220, TO-3P & TO-247)
1.13 / 10
TO-263
TO-220
TO-3P
TO-247
2.5
3.0
5.5
6.0
Fast Intrinsic Rectifier
Avalanche Rated
Low R
DS(ON)
and Q
G
Low Package Inductance
Advantages
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 4mA
V
GS
=
30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
500
3.0
5.0
100
V
V
nA
High Power Density
Easy to Mount
Space Savings
Applications
25
A
750
A
250 m
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
© 2017 IXYS CORPORATION, All Rights Reserved
DS100457C(5/17)
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
R
Gi
C
iss
C
oss
C
rss
Effective Output Capacitance
C
o(er)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
TO-220
TO-3P & TO-247
0.50
0.25
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 0.5
•
I
D25
Energy related
Time related
V
GS
= 0V
V
DS
= 0.8 • V
DSS
108
185
21
7
38
5
42
11
15
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.25
C/W
C/W
C/W
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 20V, I
D
= 0.5 • I
D25
, Note 1
Gate Input Resistance
Characteristic Values
Min.
Typ.
Max
14
23
2.1
2220
280
8
S
pF
pF
pF
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3(External)
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 13A, -di/dt = 100A/μs
V
R
= 100V
0.9
10.2
Characteristic Values
Min.
Typ.
Max
26
104
1.4
A
A
V
250 ns
nC
A
Note
1. Pulse test, t
300s, duty cycle, d
2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
Fig. 1. Output Characteristics @ T
J
= 25 C
28
24
20
V
GS
= 10V
8V
7V
50
V
GS
= 10V
8V
7V
o
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
o
40
I
D
- Amperes
16
12
8
4
0
0
1
2
3
4
5
6
7
I
D
- Amperes
6V
30
6V
20
5V
10
5V
0
0
5
10
15
20
25
30
V
DS
- Volts
V
DS
- Volts
o
Fig. 3. Output Characteristics @ T
J
= 125 C
28
24
20
V
GS
= 10V
7V
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
0
2
4
6
8
10
12
14
16
-50
Fig. 4. R
DS(on)
Normalized to I
D
= 13A Value vs.
Junction Temperature
V
GS
= 10V
6V
R
DS(on)
- Normalized
I
D
- Amperes
I
D
= 26A
16
12
5V
8
4
4V
0
I
D
= 13A
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
3.8
3.4
3.0
Fig. 5. R
DS(on)
Normalized to I
D
= 13A Value vs.
Drain Current
V
GS
= 10V
28
24
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
T
J
= 125 C
o
20
2.6
2.2
1.8
1.4
T
J
= 25 C
o
I
D
- Amperes
16
12
8
4
1.0
0
0.6
0
5
10
15
20
25
30
35
40
45
50
55
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
Fig. 7. Input Admittance
30
45
40
25
35
25 C
125 C
o
o
Fig. 8. Transconductance
T
J
= - 40 C
o
g
f s
- Siemens
20
30
25
20
15
10
I
D
- Amperes
15
T
J
= 125 C
o
25 C
10
- 40 C
o
o
5
5
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
0
5
10
15
20
25
30
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
80
70
60
7
10
9
8
V
DS
= 250V
I
D
= 13A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
40
30
20
10
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
GS
- Volts
T
J
= 125 C
T
J
= 25 C
o
o
50
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
45
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
10,000
Ciss
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
35
40
0
50
Fig. 12. Output Capacitance Stored Energy
Capacitance - PicoFarads
1,000
100
Coss
10
C rss
f
= 1 MHz
1
100
150
200
250
300
350
400
450
500
V
DS
- Volts
E
OSS
- MicroJoules
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA26N50P3 IXFP26N50P3
IXFQ26N50P3 IXFH26N50P3
Fig. 13. Forward-Bias Safe Operating Area
100
R
DS(on)
Limit
25μs
1
Fig. 14. Maximum Transient Thermal Impedance
100μs
10
0.1
I
D
- A m p e re s
1
T
J
= 150 C
T
C
= 25 C
Single Pulse
0.1
10
100
1,000
o
o
1ms
Z
(th )JC
- K / W
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
- Volts
Pulse Width - Seconds
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_26N50P3(W6) 5-19-17-B
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