STTH15L06
Turbo 2 ultrafast high voltage rectifier
Datasheet
-
production data
Description
The STTH15L06, which is using ST Turbo 2
600 V technology, is specially suited for use in
switching power supplies, and industrial
applications, as rectification and discontinuous
mode PFC boost diode.
K
A
K
A
TO-220AC
TO-220FPAC
Table 1. Device summary
K
Symbol
I
F(AV)
Value
Up to 20 A
600 V
175 °C
0.95 V
55 ns
A
NC
D²PAK
V
RRM
T
j
V
F
(typ)
t
rr
(max)
Features
•
Ultrafast switching
•
Low reverse recovery current
•
Reduces switching and conduction losses
•
Low thermal resistance
April 2014
This is information on a product in full production.
DocID10759 Rev 3
1/10
www.st.com
Characteristics
STTH15L06
1
Characteristics
Table 2. Absolute ratings (limiting values)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
T
j
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current
δ
= 0.5
TO-220AC /
D
2
PAK
T
c
= 140 °C
T
c
= 120 °C
Value
600
30
15
20
15
200
-65 to + 175
175
A
°C
°C
Unit
V
A
A
TO-220FPAC T
c
= 90 °C
Surge non repetitive forward current t
p
= 10 ms sinusoidal
Storage temperature range
Maximum operating junction temperature
Table 3. Thermal parameter
Symbol
R
th(j-c)
Junction to case
TO-220FPAC
4.0
Parameter
TO-220AC / D
2
PAK
Maximum
1.7
°C/W
Unit
Table 4. Static electrical characteristics
Symbol
I
R(1)
V
F(2)
Parameter
Reverse leakage
current
Forward voltage drop
Test conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
V
R
= V
RRM
Min.
Typ.
Max.
15
µA
40
400
1.55
I
F
= 15 A
V
0.95
1.2
Unit
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
To evaluate the maximum conduction losses use the following equation:
P = 0.94 x I
F(AV)
+ 0.017 I
F2(RMS)
2/10
DocID10759 Rev 3
STTH15L06
Table 5. Dynamic electrical characteristics
Symbol
Parameter
Test conditions
I
F
= 0.5 A, I
rr
= 0.25 A,
I
R
= 1 A
t
rr
Reverse recovery time
T
j
= 25 °C
I
F
= 1 A,
dI
F
/dt = 50 A/µs,
V
R
= 30 V
I
F
= 15 A,
dI
F
/dt = 100 A/µs,
V
R
= 400 V
I
F
= 15 A,
dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
60
Min.
Typ.
Characteristics
Max.
55
Unit
ns
85
I
RM
t
fr
V
FP
Reverse recovery current T
j
= 125 °C
Forward recovery time
Forward recovery voltage
T
j
= 25 °C
8.5
12
300
A
ns
V
3
Figure 1. Conduction losses versus average
current
P
F(AV)
(W)
24
22
20
18
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
18
20
Figure 2. Forward voltage drop versus forward
current
I
FM
(A)
100
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
90
80
T
j
=150°C
(maximum values)
δ
=1
70
60
50
40
T
j
=150°C
(typical values)
T
j
=25°C
(maximum values)
T
30
20
I
F(AV)
(A)
δ
=tp/T
tp
10
0
0.0
0.5
1.0
1.5
V
FM
(V)
2.0
2.5
3.0
Figure 3. Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220AC, D²PAK)
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
1.E-01
1.E+00
Single pulse
Figure 4. Relative variation of thermal
impedance junction to case versus pulse
duration (TO-220FPAC)
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
t
p
(s)
0.1
0.0
1.E-03
1.E-02
t
p
(s)
1.E-01
1.E+00
1.E+01
DocID10759 Rev 3
3/10
10
Characteristics
STTH15L06
Figure 5. Peak reverse recovery current versus
dI
F
/dt (90 % confidence)
I
RM
(A)
35
V
R
=400V
T
j
=125°C
Figure 6. Reverse recovery time versus dI
F
/dt
(90 % confidence)
t
rr
(ns)
800
V
R
=400V
T
j
=125°C
30
25
I
F
=0.5 x I
F(AV)
I
F
=I
F(AV)
I
F
=2 x I
F(AV)
700
600
I
F
=2 x I
F(AV)
500
400
20
I
F
=I
F(AV)
I
F
=0.5 x I
F(AV)
15
300
10
5
200
100
0
0
50
100
150
200
250
300
350
400
450
500
0
50
100
150
dI
F
/dt(A/µs)
0
dI
F
/dt(A/µs)
200
250
300
350
400
450
500
Figure 7. Reverse recovery charges versus
dI
F
/dt (90 % confidence)
Q
rr
(nC)
1800
1600
1400
1200
I
F
=I
F(AV)
V
R
=400V
T
j
=125°C
I
F
=2 x I
F(AV)
Figure 8. Softness factor versus dI
F
/dt (typical
values)
S factor
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
F
< 2 x I
F(AV)
V
R
=400V
T
j
=125°C
1000
800
600
400
200
0
0
100
200
300
400
500
I
F
=0.5 x I
F(AV)
dI
F
/dt(A/µs)
0.0
0
50
100
150
dI
F
/dt(A/µs)
200
250
300
350
400
450
500
Figure 9. Relative variations of dynamic
parameters versus junction temperature
1.4
S factor
Figure 10. Transient peak forward voltage
versus dI
F
/dt (90 % confidence)
V
FP
(V)
12
11
10
I
F
=I
F(AV)
T
j
=125°C
1.2
1.0
0.8
0.6
0.4
0.2
9
8
Q
RR
I
F
=I
F(AV)
V
R
=400V
Reference: T
j
=125°C
7
6
5
4
3
2
I
RM
t
rr
T
j
(°C)
0.0
25
50
75
100
125
1
0
0
50
100
150
dI
F
/dt(A/µs)
200
250
300
350
400
450
500
4/10
DocID10759 Rev 3
STTH15L06
Characteristics
Figure 11. Forward recovery time versus dI
F
/dt Figure 12. Junction capacitance versus reverse
(90 % confidence)
voltage applied
(typical values)
t
fr
(ns)
300
I
F
=I
F(AV)
V
FR
=1.1 x V
F
max.
T
j
=125°C
C(pF)
1000
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
250
200
150
100
100
50
dI
F
/dt(A/µs)
0
0
100
200
300
400
500
10
1
10
V
R
(V)
100
1000
Figure 13. Thermal resistance junction to ambient versus copper surface under tab
(Epoxy printed circuit board FR4 copper thickness = 35 µm) (D
2
PAK)
R
th(j-a)
(°C/W)
80
70
60
50
40
30
20
10
S
CU
(cm²)
0
0
5
10
15
20
25
30
35
40
DocID10759 Rev 3
5/10
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