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BD242C

Description
Bipolar Transistors - BJT 40W PNP Silicon
CategoryDiscrete semiconductor    The transistor   
File Size59KB,4 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
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BD242C Overview

Bipolar Transistors - BJT 40W PNP Silicon

BD242C Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerBourns
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)3 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BD242, BD242A, BD242B, BD242C
PNP SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD241 Series
40 W at 25°C Case Temperature
3 A Continuous Collector Current
5 A Peak Collector Current
Customer-Specified Selections Available
B
C
E
TO-220 PACKAGE
(TOP VIEW)
1
2
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD242
Collector-emitter voltage (R
BE
= 100
Ω)
BD242A
BD242B
BD242C
BD242
Collector-emitter voltage (I
C
= -30 mA)
BD242A
BD242B
BD242C
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
V
EBO
I
C
I
CM
I
B
P
tot
P
tot
½LI
C
2
T
j
T
stg
T
L
V
CEO
V
CER
SYMBOL
VALUE
-55
-70
-90
-115
-45
-60
-80
-100
-5
-3
-5
-1
40
2
32
-65 to +150
-65 to +150
250
V
A
A
A
W
W
mJ
°C
°C
°C
V
V
UNIT
This value applies for t
p
0.3 ms, duty cycle
10%.
Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
B(on)
= -0.4 A, R
BE
= 100
Ω,
V
BE(off)
= 0, R
S
= 0.1
Ω,
V
CC
= -20 V.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOITAMROFNI
TCUDORP
1

BD242C Related Products

BD242C BD242A-S BD242C-S BD242 BD242A BD242B-S
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Is it Rohs certified? incompatible conform to conform to incompatible incompatible conform to
Maker Bourns Bourns Bourns Bourns Bourns Bourns
Reach Compliance Code compliant unknown unknown compliant compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 3 A 3 A 3 A 3 A 3 A 3 A
Configuration SINGLE Single Single SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 10 10 10 10 10 10
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 40 W 40 W 40 W 40 W 40 W 40 W
surface mount NO NO NO NO NO NO
Is it lead-free? Contains lead - - Contains lead Contains lead Lead free
Parts packaging code TO-220AB - - TO-220AB TO-220AB TO-220AB
package instruction FLANGE MOUNT, R-PSFM-T3 - - FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 - - 3 3 3
Shell connection COLLECTOR - - COLLECTOR COLLECTOR COLLECTOR
Collector-emitter maximum voltage 100 V - - 45 V 60 V 80 V
JEDEC-95 code TO-220AB - - TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 - - R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 - - 1 1 1
Number of terminals 3 - - 3 3 3
Package body material PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - - RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT - - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified - - Not Qualified Not Qualified Not Qualified
Terminal form THROUGH-HOLE - - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE - - SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED - - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING - - SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - - SILICON SILICON SILICON
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