AS6C3216
Rev. 1.0
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The AS6C3216 is a 33,554,432-bit low power
CMOS static random access memory organized as
2,097,152 words by 16 bits or 4,194,304 words by 8
bits. It is fabricated using very high performance,
high reliability CMOS technology. Its standby current
is stable within the range of operating temperature.
The AS6C3216 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The AS6C3216 operates from a single power
supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
FEATURES
Fast access time : 55ns
Low power consumption:
Operating current : 45mA (TYP.)
Standby current : 10A (TYP.) SL-version
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control :
(i) BYTE# fixed to V
CC
LB# controlled DQ0 ~ DQ7
UB# controlled DQ8 ~ DQ15
(ii) BYTE# fixed to V
SS
DQ15 used as address pin, while LB#,
UB# and DQ8~DQ14 pins not used
Data retention voltage : 1.2V (MIN.)
Green package available
Package : 48-pin 12mm x 20mm TSOP-I
PRODUCT FAMILY
Product
Family
AS6C3216(I)
Operating
Temperature
-40 ~ 85℃
Vcc Range
2.7 ~ 3.6V
Speed
55ns
Power Dissipation
Standby(I
SB1,
TYP.) Operating(Icc,TYP.)
10µA(SL)
45mA
Alliance Memory, Inc.
1
AS6C3216
Rev. 1.0
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
PIN DESCRIPTION
SYMBOL
A0 – A20
A-1 – A20
DECODER
2048Kx16/4096Kx8
MEMORY ARRAY
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
DESCRIPTION
Address Inputs(word mode)
Address Inputs(byte mode)
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Byte Enable
Power Supply
Ground
A0~A20
/A-1~A20
DQ0 – DQ15 Data Inputs/Outputs
CE#, CE2
WE#
OE#
LB#
UB#
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
I/O DATA
CIRCUIT
COLUMN I/O
BYTE#
V
CC
V
SS
CE#
CE2
WE#
OE#
LB#
UB#
BYTE#
CONTROL
CIRCUIT
Alliance Memory, Inc.
2
AS6C3216
Rev. 1.0
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
PIN CONFIGURATION
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE#
CE2
NC
UB#
LB#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
Vss
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
Vcc
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
Vss
CE#
A0
AS6C3216
TSOP-I
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 4.6
-0.5 to V
CC
+0.5
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
℃
℃
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Alliance Memory, Inc.
3
AS6C3216
Rev. 1.0
32M Bits ( 2Mx16 / 4Mx8 Switchable) LOW POWER CMOS SRAM
TRUTH TABLE
MODE
Standby
Output
Disable
Read
CE#
H
X
X
L
L
L
L
L
L
L
L
L
L
L
CE2
X
L
X
H
H
H
H
H
H
H
H
H
H
H
BYTE# OE#
X
X
H
H
H
L
H
H
H
H
H
H
L
L
X
X
X
H
H
H
L
L
L
X
X
X
L
X
WE#
X
X
X
H
H
H
H
H
H
L
L
L
H
L
LB#
X
X
H
L
X
X
L
H
L
L
H
L
X
X
UB#
X
X
H
X
L
X
H
L
L
H
L
L
X
X
I/O OPERATION
DQ0-DQ7 DQ8-DQ14 DQ15
High – Z
High – Z High – Z
High – Z
High – Z High – Z
High – Z
High – Z High – Z
High – Z
High – Z High – Z
High – Z
High – Z High – Z
High – Z
High – Z High – Z
D
OUT
High – Z High – Z
High – Z
D
OUT
D
OUT
D
OUT
D
OUT
D
OUT
D
IN
High – Z High – Z
High – Z
D
IN
D
IN
D
IN
D
IN
D
IN
Dout
Din
High – Z
High – Z
A-1
A-1
SUPPLY
CURRENT
I
SB
,I
SB1
I
CC
,I
CC1
I
CC
,I
CC1
Write
Byte#
Read
Byte #
Write
Note:
I
CC
,I
CC1
I
CC
,I
CC1
I
CC
,I
CC1
H = V
IH
, L = V
IL
, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
PARAMETER
Supply Voltage
V
CC
*1
Input High Voltage
V
IH
*2
Input Low Voltage
V
IL
Input Leakage Current
I
LI
V
CC
≧
V
IN
≧
V
SS
Output Leakage
V
CC
≧
V
OUT
≧
V
SS
I
LO
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -1mA
Output Low Voltage
V
OL
I
OL
= 2mA
Cycle time = Min.
CE# = V
IL
and CE2 = V
IH
I
CC
- 55
I
I/O
= 0mA
Other pins at V
IL
or V
IH
Average Operating
Power supply Current
Cycle time = 1µs
CE#
≦
0.2V and CE2
≧
V
CC
-0.2V
I
CC1
I
I/O
= 0mA
Other pins at 0.2V or V
CC
-0.2V
CE# = V
IH
or CE2 = V
IL
I
SB
Other pins at V
IL
or V
IH
Standby Power
CE#
≧V
CC
-0.2V
Supply Current
I
SB1
-SLI
or CE2
≦
0.2V
Other pins at 0.2V or V
CC
-0.2V
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical values are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
MIN.
2.7
2.2
- 0.2
-1
-1
2.2
-
-
TYP.
3.0
-
-
-
-
2.7
-
45
*4
MAX.
3.6
V
CC
+0.3
0.6
1
1
-
0.4
80
UNIT
V
V
V
µA
µA
V
V
mA
-
10
20
mA
-
-
0.3
10
2
120
mA
µA
Alliance Memory, Inc.
4
Embedded System
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