EEWORLDEEWORLDEEWORLD

Part Number

Search

RM2C

Description
1.2 A, 1000 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size50KB,2 Pages
ManufacturerETC
Download Datasheet Compare View All

RM2C Overview

1.2 A, 1000 V, SILICON, RECTIFIER DIODE

RM2C Preview

Rectifier Diodes
V
RM
(V)
Package
Part Number
I
F (AV)
(A)
I
FSM
(A)
50Hz
( ) is with
Half-cycle Sinewave
Single Shot
Heatsink
1000V
Tj
(°C)
Tstg
(°C)
V
F
(V)
max
1.2
0.97
0.92
0.91
0.92
0.95
0.95
1.0
1.05
I
R
(µA)
I
F
(A)
1.0
1.0
1.5
1.5
1.5
2.5
3.0
2.0
7.5
V
R
= V
RM
max
5
20
10
10
10
10
10
10
50
I
R
(H)
(µA)
V
R
= V
RM
max
50
100
50
50
50
100
50
50
200
Ta
(°C)
100
100
100
100
100
150
100
100
100 (Tj)
Rth (j- )
Rth (j-c)
(°C/W)
15
17
15
12
12
10
8
5.0
1.5
Mass
(g)
0.4
0.3
0.4
49
0.6
0.61
1.0
1.2
4.05
6.45
51
54
50
Fig.
No.
Page where
characteristic
curve is shown
RM 1C
EM 1C
RM 11C
Axial
1000
0.8
1.0
1.2
1.2
1.2
2.0
1.7 (3.0)
4.0
40
35
100
100
80
150
150
100
200
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
–40 to +150
49
48
RM 2C
RO 2C
RM 3C
RM 4C
RBV-40C
RBV-150C
Bridge
*
15
*
: Under development
s
External Dimensions
0.78
±0.05
Flammability: UL94V-0 or Equivalent (Unit: mm)
0.78
±0.05
0.98
±0.05
1.2
±0.05
Cathode Mark
1.4
±0.1
Cathode Mark
Cathode Mark
62.5
±0.7
62.3
±0.7
5.0
±0.2
7.2
±0.2
Cathode Mark
Cathode Mark
62.5
±0.7
62.5
±0.7
50.0
±0.1
2.7
±0.2
4.0
±0.2
7.2
±0.2
4.0
±0.2
9.1
±0.2
8.0
±0.2
5.2
±0.2
6.5
±0.2
25
±0.2
12.5
±0.2
C3
11
±0.2
15
±0.2
4.6
±0.2
3.2
±0.2
3.6
±0.2
C3
(4) 9.5
±0.2
3.8
±0.2
(4.5)
2.7
±0.1
11
±0.2
20
±0.2
3.8
±0.2
1
–0.1
7.5
±0.1
7.5
±0.1
7.5
±0.1
+0.2
+0.2
1
–0.1
2
–0.1
0.7
–0.1
+0.2
(17.5)
+0.2
5
2.7
±0.1
10
±0.1
7.5
±0.1
7.5
±0.1
2.5
±0.1
0.7
–0.1
3.2
±0.2
+0.2
30
±0.2
15
±0.2
4.6
±0.2
3.6
±0.2
17
Characteristic Curves
Rectifier Diodes
EM 2
series
Ta—I
F (AV)
Derating
1.5
I
F(AV)
(A)
L =10 mm
L =10 mm
V
F
—I
F
Characteristics
(Typical)
10
I
FSM
(A)
I
FMS
Rating
80
50
0.9
1
Peak Forward Surge Current
P.C.B Solder
180 • 100 • 1.6 t
10mm
Copper Foil
Forward Current I
F
(A)
1.2
60
Average Forward Current
40
0.6
0.1
T
a
= 150°C
100°C
60°C
25°C
0.5
0.7
0.9
1.1
1.3
Forward Voltage V
F
(V)
1.5
0.3
0.01
20
0
0
25
50
75
100 125
Ambient Temperature Ta (°C)
150
0.001
0.3
0
1
5
10
Overcurrent Cycles
50
RM 1
series
I
F(AV)
(A)
Forward Current I
F
(A)
0.8
RM1Z
RM1
RM1A
I
FSM
(A)
1.0
Ta—I
F (AV)
Derating
V
F
—I
F
Characteristics
(Typical)
5.0
50
I
FMS
Rating
40
1.0
0.5
Peak Forward Surge Current
Average Forward Current
0.6
RM1B
RM1C
30
RM 1Z
RM 1
RM 1A
0.4
T
a
= 130°C
100°C
25°C
0.1
0.05
0.5
20
0.2
10
RM 1B
RM 1C
0
0
25
50
75
100 125
Ambient Temperature Ta (°C)
150
0.6
0.7
0.8
0.9
1.0
Forward Voltage V
F
(V)
1.1
0
1
5
10
Overcurrent Cycles
50
RM 11
series
Ta—I
F (AV)
Derating
1.5
I
F(AV)
(A)
V
F
—I
F
Characteristics
(Typical)
10
Forward Current I
F
(A)
I
FSM
(A)
I
FMS
Rating
100
30
1.2
80
1
0.9
Peak Forward Surge Current
Average Forward Current
60
0.6
0.1
T
a
= 150
°C
100
°C
40
0.3
0.01
60
°C
25
°C
20
0
0
25
50
75
100 125
Ambient Temperature Ta (°C)
150
0.001
0.2
0.4
0.6
0.8
1.0
Forward Voltage V
F
(V)
1.2
0
1
5
10
Overcurrent Cycles
50
RM 10
series
Ta —I
F (AV)
Derating
1.5
I
F(AV)
(A)
L =15mm
L =15mm
V
F
—I
F
Characteristics
(Typical)
5.0
I
FSM
(A)
150
I
FMS
Rating
I
FSM
(A)
Peak Forward Surge Current
P.C.B Solder
180 • 100 • 1.6 t
10mm
Copper Foil
Forward Current I
F
(A)
1.2
20ms
Average Forward Current
1.0
0.5
T
a
= 130
°C
100
°C
25
°C
100
0.9
RM10
RM10A
RM10B
RM10Z
RM10
RM10A
RM10B
0.6
50
0.3
RM10Z
0.1
0.05
0.5
0
0
25
50
75
100 125
Ambient Temperature Ta (°C)
150
0.6
0.7
0.8
0.9
1.0
Forward Voltage V
F
(V)
1.1
0
1
5
10
Overcurrent Cycles
50
RM 2
series
I
F(AV)
(A)
I
FSM
(A)
I
FSM
(A)
1.5
Ta —I
F (AV)
Derating
V
F
—I
F
Characteristics
(Typical)
5.0
100
I
FMS
Rating
Forward Current I
F
(A)
1.2
80
20ms
1.0
0.5
T
a
= 130
°C
100
°C
25
°C
0.9
Peak Forward Surge Current
Average Forward Current
60
0.6
40
0.3
0.1
0.05
0.5
20
0
0
25
50
75
100 125
Ambient Temperature Ta (°C)
150
0.6
0.7
0.8
0.9
1.0
Forward Voltage V
F
(V)
1.1
0
1
5
10
Overcurrent Cycles
50
49

RM2C Related Products

RM2C EM1C RM1C RM11C RO2C RM4C RM3C RBV-40C RBV-150C
Description 1.2 A, 1000 V, SILICON, RECTIFIER DIODE SIGNAL DIODE 0.8 A, SILICON, SIGNAL DIODE RECTIFIER DIODE 1.2 A, 1000 V, SILICON, RECTIFIER DIODE RECTIFIER DIODE 2 A, 1000 V, SILICON, RECTIFIER DIODE 4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 15 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 657  1877  1713  2296  1463  14  38  35  47  30 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号