RBV-150C datasheet, PDF - EEWORLD Datasheet

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RBV-150C: Description15 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size50KB，2 Pages; ManufacturerETC

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RBV-150C Overview

15 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

RBV-150C Preview

Rectifier Diodes

(V)

Package

Part Number

F (AV)

(A)

FSM

(A)

50Hz

( ) is with

Half-cycle Sinewave

Single Shot

Heatsink

1000V

(°C)

Tstg

(°C)

(V)

max

1.2

0.97

0.92

0.91

0.92

0.95

1.0

1.05

(µA)

(A)

1.0

1.5

2.5

3.0

2.0

7.5

= V

max

(H)

(µA)

= V

max

100

200

(°C)

100

150

100

100 (Tj)

Rth (j- )

Rth (j-c)

(°C/W)

5.0

1.5

Mass

(g)

0.4

0.3

0.4

0.6

0.61

1.0

1.2

4.05

6.45

Fig.

No.

Page where

characteristic

curve is shown

RM 1C

EM 1C

RM 11C

Axial

1000

0.8

1.0

1.2

2.0

1.7 (3.0)

4.0

100

150

100

200

–40 to +150

RM 2C

RO 2C

RM 3C

RM 4C

RBV-40C

RBV-150C

Bridge

: Under development

External Dimensions

0.78

±0.05

Flammability: UL94V-0 or Equivalent (Unit: mm)

0.78

±0.05

0.98

±0.05

1.2

±0.05

Cathode Mark

1.4

±0.1

Cathode Mark

62.5

±0.7

62.3

±0.7

5.0

±0.2

7.2

±0.2

Cathode Mark

62.5

±0.7

62.5

±0.7

50.0

±0.1

2.7

±0.2

4.0

±0.2

7.2

±0.2

4.0

±0.2

9.1

±0.2

8.0

±0.2

5.2

±0.2

6.5

±0.2

12.5

±0.2

4.6

±0.2

3.2

±0.2

3.6

±0.2

(4) 9.5

±0.2

3.8

±0.2

(4.5)

2.7

±0.1

±0.2

3.8

±0.2

–0.1

7.5

±0.1

7.5

±0.1

7.5

±0.1

+0.2

–0.1

0.7

–0.1

+0.2

(17.5)

+0.2

2.7

±0.1

7.5

±0.1

7.5

±0.1

2.5

±0.1

0.7

–0.1

3.2

±0.2

+0.2

±0.2

4.6

±0.2

3.6

±0.2

Characteristic Curves

Rectifier Diodes

EM 2

series

Ta—I

F (AV)

Derating

1.5

F(AV)

(A)

L =10 mm

—I

Characteristics

(Typical)

FSM

(A)

FMS

Rating

0.9

Peak Forward Surge Current

P.C.B Solder

180 • 100 • 1.6 t

10mm

Copper Foil

Forward Current I

(A)

1.2

Average Forward Current

0.6

0.1

= 150°C

100°C

60°C

25°C

0.5

0.7

0.9

1.1

1.3

Forward Voltage V

(V)

1.5

0.3

0.01

100 125

Ambient Temperature Ta (°C)

150

0.001

0.3

Overcurrent Cycles

RM 1

series

F(AV)

(A)

Forward Current I

(A)

0.8

RM1Z

RM1

RM1A

FSM

(A)

1.0

Ta—I

F (AV)

Derating

—I

Characteristics

(Typical)

5.0

FMS

Rating

1.0

0.5

Peak Forward Surge Current

Average Forward Current

0.6

RM1B

RM1C

RM 1Z

RM 1

RM 1A

0.4

= 130°C

100°C

25°C

0.1

0.05

0.5

0.2

RM 1B

RM 1C

100 125

Ambient Temperature Ta (°C)

150

0.6

0.7

0.8

0.9

1.0

Forward Voltage V

(V)

1.1

Overcurrent Cycles

RM 11

series

Ta—I

F (AV)

Derating

1.5

F(AV)

(A)

—I

Characteristics

(Typical)

Forward Current I

(A)

FSM

(A)

FMS

Rating

100

1.2

0.9

Peak Forward Surge Current

Average Forward Current

0.6

0.1

= 150

°C

100

°C

0.3

0.01

°C

100 125

Ambient Temperature Ta (°C)

150

0.001

0.2

0.4

0.6

0.8

1.0

Forward Voltage V

(V)

1.2

Overcurrent Cycles

RM 10

series

Ta —I

F (AV)

Derating

1.5

F(AV)

(A)

L =15mm

—I

Characteristics

(Typical)

5.0

FSM

(A)

150

FMS

Rating

FSM

(A)

Peak Forward Surge Current

P.C.B Solder

180 • 100 • 1.6 t

10mm

Copper Foil

Forward Current I

(A)

1.2

20ms

Average Forward Current

1.0

0.5

= 130

°C

100

°C

100

0.9

RM10

RM10A

RM10B

RM10Z

RM10

RM10A

RM10B

0.6

0.3

RM10Z

0.1

0.05

0.5

100 125

Ambient Temperature Ta (°C)

150

0.6

0.7

0.8

0.9

1.0

Forward Voltage V

(V)

1.1

Overcurrent Cycles

RM 2

series

F(AV)

(A)

FSM

(A)

FSM

(A)

1.5

Ta —I

F (AV)

Derating

—I

Characteristics

(Typical)

5.0

100

FMS

Rating

Forward Current I

(A)

1.2

20ms

1.0

0.5

= 130

°C

100

°C

0.9

Peak Forward Surge Current

Average Forward Current

0.6

0.3

0.1

0.05

0.5

100 125

Ambient Temperature Ta (°C)

150

0.6

0.7

0.8

0.9

1.0

Forward Voltage V

(V)

1.1

Overcurrent Cycles

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RBV-150C Related Products

	RBV-150C	EM1C	RM1C	RM11C	RM2C	RO2C	RM4C	RM3C	RBV-40C
Description	15 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE	SIGNAL DIODE	0.8 A, SILICON, SIGNAL DIODE	RECTIFIER DIODE	1.2 A, 1000 V, SILICON, RECTIFIER DIODE	1.2 A, 1000 V, SILICON, RECTIFIER DIODE	RECTIFIER DIODE	2 A, 1000 V, SILICON, RECTIFIER DIODE	4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

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