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BPX-84

Description
Phototransistors PHOTOTRANSISTOR
CategoryLED optoelectronic/LED   
File Size236KB,11 Pages
ManufacturerOsram Opto Semiconductor
Websitehttps://www.osram.com/index-2.jsp
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BPX-84 Overview

Phototransistors PHOTOTRANSISTOR

BPX-84 Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerOsram Opto Semiconductor
Product CategoryPhototransistors
RoHSDetails
ProductPhototransistors
Package / CaseMiniature Array
Mounting StyleThrough Hole
Peak Wavelength850 nm
Operating Supply Voltage-
Maximum On-State Collector Current50 mA
Collector- Emitter Voltage VCEO Max35 V
Dark Current1 nA
Rise Time6 us
Fall Time6 us
Pd - Power Dissipation90 mW
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 80 C
Height3.4 mm
Length7.4 mm
Lens Color/StyleTransparent
Output Current-
TypeSilicon NPN Phototransistor Arrays
Wavelength850 nm
Width1.8 mm
Collector-Emitter Breakdown Voltage35 V
Collector-Emitter Saturation Voltage150 mW
Propagation Delay - Max-
Half Intensity Angle Degrees18 deg
Light Current320 uA
NumOfPackaging1
Factory Pack Quantity150
2014-01-14
Silicon NPN Phototransistor Arrays
NPN-Silizium-Fototransistor Zeilen
Version 1.1
BPX 80, BPX 82 ... BPX 89
Spectral range of sensitivity:
(typ) 450 ... 1100
nm
Package:
Miniature Array, Epoxy
Special:
Multiple-digit array package
• High linearity
• Available in groups
Features:
Spektraler Bereich der Fotoempfindlichkeit:
(typ) 450 ... 1100 nm
Gehäuse:
Miniatur Array, Harz
Besonderheit:
Mehrstellige Zeilenbauform
• Hohe Linearität
• Gruppiert lieferbar
Besondere Merkmale:
Applications
• Miniature photointerrupters
• Industrial electronics
• For control and drive circuits
Anwendungen
• Miniatur Lichtschranken
• Industrieelektronik
• Messen / Steuern / Regeln
2014-01-14
1

BPX-84 Related Products

BPX-84 BPX-82 BPX-81-4 BPX-81-3-4 BPX-81-2-3
Description Phototransistors PHOTOTRANSISTOR Phototransistors PHOTOTRANSISTOR Phototransistors PHOTOTRANSISTOR Phototransistors PHOTOTRANSISTOR Phototransistors PHOTOTRANSISTOR
Product Attribute Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value
Manufacturer Osram Opto Semiconductor Osram Opto Semiconductor Osram Opto Semiconductor Osram Opto Semiconductor Osram Opto Semiconductor
Product Category Phototransistors Phototransistors Phototransistors Phototransistors Phototransistors
RoHS Details Details Details Details Details
Product Phototransistors Phototransistors Phototransistors Phototransistors Phototransistors
Package / Case Miniature Array Miniature Array Miniature Array Miniature Array Miniature Array
Mounting Style Through Hole Through Hole Through Hole Through Hole Through Hole
Peak Wavelength 850 nm 850 nm 850 nm 850 nm 850 nm
Maximum On-State Collector Current 50 mA 50 mA 50 mA 50 mA 50 mA
Collector- Emitter Voltage VCEO Max 35 V 35 V 35 V 35 V 35 V
Dark Current 1 nA 1 nA 1 nA 1 nA 1 nA
Rise Time 6 us 6 us 8 us 6 us, 8 us 5.5 us, 6 us
Fall Time 6 us 6 us 8 us 6 us, 8 us 5.5 us, 6 us
Pd - Power Dissipation 90 mW 90 mW 90 mW 90 mW 90 mW
Minimum Operating Temperature - 40 C - 40 C - 40 C - 40 C - 40 C
Maximum Operating Temperature + 80 C + 80 C + 80 C + 80 C + 80 C
Height 3.4 mm 3.4 mm 3.4 mm 3.4 mm 3.4 mm
Length 7.4 mm 7.4 mm 2.4 mm 2.4 mm 2.4 mm
Lens Color/Style Transparent Transparent Transparent Transparent Transparent
Type Silicon NPN Phototransistor Arrays Silicon NPN Phototransistor Arrays Silicon NPN Phototransistor Arrays Silicon NPN Phototransistor Arrays Silicon NPN Phototransistor Arrays
Wavelength 850 nm 850 nm 850 nm 850 nm 850 nm
Width 1.8 mm 1.8 mm 1.8 mm 1.8 mm 1.8 mm
Collector-Emitter Breakdown Voltage 35 V 35 V 35 V 35 V 35 V
Collector-Emitter Saturation Voltage 150 mW 150 mW 150 mW 150 mW 150 mW
Half Intensity Angle Degrees 18 deg 18 deg 18 deg 18 deg 18 deg
Light Current 320 uA 320 uA 630 uA 320 uA 320 uA
Factory Pack Quantity 150 250 1000 1000 1000
NumOfPackaging 1 - - 1 1
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