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BAS19-T

Description
Diodes - General Purpose, Power, Switching 200mA 120V
Categorysemiconductor    Discrete semiconductor   
File Size223KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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BAS19-T Overview

Diodes - General Purpose, Power, Switching 200mA 120V

BAS19-T Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerMCC
Product CategoryDiodes - General Purpose, Power, Switching
RoHSN
Mounting StyleSMD/SMT
Package / CaseSOT-23
Max Surge Current2.5 A
If - Forward Current200 mA
ConfigurationSingle
Recovery Time50 ns
Vf - Forward Voltage1.25 V
Ir - Reverse Current0.1 uA
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Height1.12 mm (Max)
Length3.04 mm (Max)
TypeUltra Fast Recovery Rectifier
Width1.4 mm (Max)
NumOfPackaging3
Factory Pack Quantity3000
Vr - Reverse Voltage120 V
Unit Weight0.000282 oz
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
BAS19
THRU
BAS21
Small
Signal Diodes
250mW
SOT-23
A
D
Features
Ideally Suited for Automatic Insertion
150
o
C Junction Temperature
Fast Switching speed
Epitaxial Planar Die Construction
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Halogen
free available upon request by adding suffix "-HF"
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Weight: 0.008 grams ( approx.)
Mechanical Data
Top View
3
Continuous
Reverse
MCC Part
Marking
Voltage
Number
V
R
(V)
BAS19
BAS20
BAS21
JP
JR
JS
100
150
200
Repetitive
Peak
Reverse
Voltage
V
RRM
(V)
120
200
250
G
C
B
1
2
F
E
H
J
K
DIMENSIONS
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Parameter
Symbol Value
@ t=1us
2.5
Non-repetitive Peak
I
FSM
Forward Surge Current @ t=1s
0.5
I
F(AV)
Average Rectified Forward Current
200
(1)
I
F
Forward DC Current at T
amb
=25
o
C
200
(2)
Repetitive Peak Forward Current
I
FRM
625
Unit
A
mA
mA
mA
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
P
tot
250
mW
Power Dissipation up to T
amb
=25
o
C
Thermal Resistance Junction to
R
q
JA
430
o
C/W
Ambient
Operating & Storage Temperature T
j
, T
STG
-65~150
o
C
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
Notes:
(1) Measured under pulse conditions;
Pulse time = t
p
<= 0.3ms
(2) Device on fiberglass substrate,
See layout on next page
.037
.950
.037
.950
Revision:
B
www.mccsemi.com
1 of 3
2013/01/01

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