IGBT with Diode
ISOPLUS 247
TM
IXSR 40N60BD1 V
CES
I
C25
V
CE(sat)
(Electrically Isolated Backside)
t
fi(typ)
Short Circuit SOA Capability
Preliminary Data Sheet
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
V
ISOL
50/60 Hz, RMS
t = 1 min leads-to housing
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 22
Ω
Clamped inductive load, L = 30
µH
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125°C
R
G
= 22
Ω,
non repetitive
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
70
40
150
I
CM
= 80
@ 0.8 V
CES
10
170
-55 ... +150
150
-55 ... +150
2500
300
V
V
V
V
A
A
A
A
µs
W
°C
°C
°C
V~
°C
Features
G = Gate,
E = Emitter
G
C
= 600 V
= 70 A
= 2.2 V
= 120 ns
ISOPLUS 247
TM
E 153432
E
Isolated backside*
C = Collector,
* Patent pending
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
5
g
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Easy assembly
High power density
Very fast switching speeds for high
frequency applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
4
T
J
= 25°C
T
J
= 150°C
7
650
5
±100
2.2
V
V
µA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 1 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
=
I
T,
V
GE
= 15 V
© 2003 IXYS All rights reserved
DS98672A(01/03)
IXSR 40N60BD1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
16
23
3700
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
440
60
190
I
C
=
I
T,
V
GE
= 15 V, V
CE
= 0.5 V
CES
Inductive load, T
J
= 25°C
°
I
C
=
I
T,
V
GE
= 15 V, L = 100
µH,
V
CE
= 0.8 V
CES
, R
G
= 2.7
Ω
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125°C
°
I
C
=
I
T,
V
GE
= 15 V, L = 100
µH
V
CE
= 0.8 V
CES
, R
G
= 2.7
Ω
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
45
88
50
50
110
120
1.8
50
50
2.2
190
180
2.6
200
200
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
Millimeter
Min.
Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
4 no connection
ISOPLUS 247 OUTLINE
g
fs
C
iss
C
oss
C
rss
Q
g
Q
ge
Q
gc
t
d(on)
t
ri
t
d(off)
t
fi
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
R
thJC
R
thCK
I
C
=
I
T
; V
CE
= 10 V,
Pulse test, t
≤
300
µs,
duty cycle
≤
2 %
2.6 mJ
ns
ns
mJ
ns
ns
mJ
0.73 K/W
0.15
K/W
Reverse Diode (FRED)
Symbol
V
F
I
RM
t
rr
R
thJC
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1.8
2
35
2.5
V
A
ns
1.15 K/W
I
F
=
I
T,
V
GE
= 0 V,
Pulse test, t
≤
300
µs,
duty cycle d
≤
2 %
I
F
=
I
T,
V
GE
= 0 V, -di
F
/dt = 100 A/µs
V
R
= 100 V
I
F
= 1 A; -di/dt = 200 A/µs; V
R
= 30 V
Note: 1. I
T
= 40A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
Talking
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