K4S561632E-UC75 datasheet, PDF

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K4S561632E-UC75: Description256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant); Categorystorage storage; File Size196KB，14 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4S561632E-UC75 Overview

256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)

K4S561632E-UC75 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SAMSUNG
package instruction	TSOP2, TSOP54,.46,32
Reach Compliance Code	unknow
access mode	FOUR BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G54
JESD-609 code	e6
length	22.22 mm
memory density	268435456 bi
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	54
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP54,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	260
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.002 A
Maximum slew rate	0.18 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Bismuth (Sn96Bi4)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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SDRAM 256Mb E-die (x4, x8, x16)

CMOS SDRAM

256Mb E-die SDRAM Specification

54 TSOP-II with Pb-Free

(RoHS compliant)

Revision 1.3

August 2004

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 1.3 August 2004

K4S561632E-UC75 Related Products

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Description	256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)	256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)	256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)	256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)	256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)	Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54	256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)	256Mb E-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant)
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	-	conform to	conform to
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	-	-	SAMSUNG	-
Reach Compliance Code	unknow	unknow	compli	unknow	unknow	-	unknow	unknow
Maximum access time	5.4 ns	5 ns	5.4 ns	5 ns	5.4 ns	-	5.4 ns	5.4 ns
Maximum clock frequency (fCLK)	133 MHz	166 MHz	133 MHz	166 MHz	133 MHz	-	133 MHz	133 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	-	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	-	1,2,4,8	1,2,4,8
JESD-30 code	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	-	R-PDSO-G54	R-PDSO-G54
JESD-609 code	e6	-	e3	-	e6	-	e6	e6
memory density	268435456 bi	268435456 bi	268435456 bi	268435456 bi	268435456 bi	-	268435456 bi	268435456 bi
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	-	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	16	16	16	16	8	-	4	4
Humidity sensitivity level	3	-	1	3	3	-	3	3
Number of terminals	54	54	54	54	54	-	54	54
word count	16777216 words	16777216 words	16777216 words	16777216 words	33554432 words	-	67108864 words	67108864 words
character code	16000000	16000000	16000000	16000000	32000000	-	64000000	64000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	-	70 °C	70 °C
organize	16MX16	16MX16	16MX16	16MX16	32MX8	-	64MX4	64MX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	-	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	TSOP	TSOP2	TSOP	TSOP	-	TSOP	TSOP
Encapsulate equivalent code	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	-	TSOP54,.46,32	TSOP54,.46,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	-	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	-	8192	8192
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	-	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.002 A	0.002 A	0.002 A	0.002 A	0.002 A	-	0.002 A	0.002 A
Maximum slew rate	0.18 mA	0.2 mA	0.18 mA	0.2 mA	0.18 mA	-	0.18 mA	0.18 mA
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	-	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	-	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	-	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	-	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Bismuth (Sn96Bi4)	-	Matte Tin (Sn)	-	Tin/Bismuth (Sn96Bi4)	-	Tin/Bismuth (Sn96Bi4)	Tin/Bismuth (Sn96Bi4)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	-	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	-	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	-	DUAL	DUAL

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