DMN3025LFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
®
Product Summary
V
(BR)DSS
R
DS(ON) Max
18mΩ @ V
GS
= 10V
30V
28mΩ @ V
GS
= 4.5V
6.1A
I
D Max
T
A
= +25°C
7.5A
Features
•
•
•
•
•
•
•
NEW PRODUCT
Low R
DS(ON)
– ensures on state losses are minimized
Small form factor thermally efficient package enables higher
density end products
Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
100% Unclamped Inductive Switch (UIS) test in production
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
•
•
•
•
Applications
•
•
•
Backlighting
Power Management Functions
DC-DC Converters
Case: POWERDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish
⎯
Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (approximate)
POWERDI3333-8
1
S
Pin 1
S
S
G
8
7
6
5
Top View
Internal Schematic
2
3
D
D
4
D
D
Bottom View
Top View
Ordering Information
(Note 4)
Part Number
DMN3025LFG-7
DMN3025LFG-13
Notes:
Case
POWERDI3333-8
POWERDI3333-8
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
YYWW
N25
N25 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 11 = 2011)
WW = Week code (01 ~ 53)
POWERDI is a registered trademark of Diodes Incorporated.
DMG3025LFG
Document number: DS35642 Rev. 5 – 2
1 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMN3025LFG
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
t<10s
T
A
= +25°C
T
A
= +70°C
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
I
S
I
DM
I
AR
E
AR
Value
30
±20
7.5
6.1
10
7.8
2.5
60
14
10
Units
V
V
A
A
A
A
A
mJ
NEW PRODUCT
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
Avalanche Energy (Note 6) L = 0.1mH
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
T
A
= +25°C
T
A
= +70°C
Steady State
t < 10s
Symbol
P
D
R
θ
JA
R
θ
JC
T
J,
T
STG
Value
2.0
1.3
61
37
6.4
-55 to 150
Units
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
30
—
—
0.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
14
23
9
0.70
605
74
58
1.5
5.3
11.6
2
2.4
3.8
4.1
17.9
4.7
5.5
2.6
Max
—
1
±1
2.0
18
28
-
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
μA
V
mΩ
S
V
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 7.8A
V
GS
= 4.5V, I
D
= 7.0A
V
DS
= 10V, I
D
= 7.8A
V
GS
= 0V, I
S
= 6.3A
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
V
DS
= 15V, I
D
= 7.8A
pF
Ω
nC
ns
ns
nC
V
DD
= 15V, V
GS
= 4.5V,
R
L
= 2.4Ω, R
G
= 1Ω,
I
F
= 12A, di/dt = 500A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= +25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMG3025LFG
Document number: DS35642 Rev. 5 – 2
2 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMN3025LFG
30
25
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
30
25
V
DS
= 5.0V
20
20
15
15
NEW PRODUCT
10
10
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
5
0
5
0
0
0.5
1.0
1.5
2.0
2.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
3.0
0
1
2
3
4
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.025
V
GS
= 4.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.030
0.10
0.08
0.020
0.06
0.015
V
GS
= 10V
0.04
I
D
= 10A
0.010
0.005
0
0.02
0
5
10
15
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
0
3
4
5
6
7
8
9
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical On-Resistance vs.
Drain Current and Gate Voltage
10
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.08
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
V
GS
= 4.5V
V
GS
= 10 V
I
D
= 10A
0.07
0.06
0.05
0.04
1.4
T
A
= 150°C
T
A
= 125°C
1.2
V
GS
= 4.5V
I
D
= 5A
T
A
= 85°C
0.03
0.02
0.01
0
0
5
1.0
T
A
= 25°C
T
A
= -55°C
0.8
10
15
20
25
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated.
DMG3025LFG
Document number: DS35642 Rev. 5 – 2
3 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMN3025LFG
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
Ω
)
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 7 On-Resistance Variation with Temperature
V
GS
= 10 V
I
D
= 10A
V
GS
= 4.5V
I
D
= 5A
2.0
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-25
0
25
50 75 100 125 150
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10,000
I
D
= 250µA
I
D
= 1mA
NEW PRODUCT
0
-50
30
25
I
S
, SOURCE CURRENT (A)
C
T
, JUNCTION CAPACITANCE (pF)
20
T
A
= 25°C
1,000
C
iss
15
10
100
C
oss
C
rss
f = 1MHz
5
0
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
30
100
V
GS
GATE THRESHOLD VOLTAGE (V)
R
DS(on)
Limited
V
DS
= 15V
I
D
= 10A
P
W
= 10µs
I
D
, DRAIN CURRENT (A)
10
DC
1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
0.1
T
J(max)
= 150°C
T
A
= 25°C
Single Pulse
P
W
= 10ms
P
W
= 1ms
P
W
= 100µs
0
2
4
6
8
10
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
12
0.01
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
POWERDI is a registered trademark of Diodes Incorporated.
DMG3025LFG
Document number: DS35642 Rev. 5 – 2
4 of 6
www.diodes.com
November 2012
© Diodes Incorporated
DMN3025LFG
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
D = 0.02
NEW PRODUCT
0.01
D = 0.01
D = 0.005
Single Pulse
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 72°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Figure 13 Transient Thermal Resistance
10
100
1,000
0.001
0.00001
0.0001
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A1
D
D2
A3
Pin 1 ID
E
E2
1
4
L
(4x)
b2
(4x)
8
5
L1
(3x)
Z (4x)
e
b (8x)
POWERDI3333-8
Dim Min Max Typ
D
3.25 3.35 3.30
E
3.25 3.35 3.30
D2
2.22 2.32 2.27
E2
1.56 1.66 1.61
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.203
−
−
b
0.27 0.37 0.32
b2
0.20
−
−
L
0.35 0.45 0.40
L1
0.39
−
−
e
0.65
−
−
Z
0.515
−
−
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
G
Y2
8
G1
5
Y1
Y
1
Y3
X2
C
4
Dimensions
C
G
G1
Y
Y1
Y2
Y3
X
X2
Value (in mm)
0.650
0.230
0.420
3.700
2.250
1.850
0.700
2.370
0.420
POWERDI is a registered trademark of Diodes Incorporated.
DMG3025LFG
Document number: DS35642 Rev. 5 – 2
5 of 6
www.diodes.com
November 2012
© Diodes Incorporated
京公网安备 11010802033920号
EEWORLD
