DN2530
N-Channel Depletion-Mode
Vertical DMOS FETs
Features
►
►
►
►
►
►
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
General Description
The DN2530 is a low threshold depletion-mode (normally-on)
transistor utilizing an advanced vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
►
►
►
►
►
►
►
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Ordering Information
Device
DN2530
Package Options
TO-243AA (SOT-89)
DN2530N8-G
TO-92
DN2530N3-G
BV
DSX
/BV
DGX
(V)
R
DS(ON)
(max)
(Ω)
I
DSS
(min)
(mA)
300
12
200
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
DRAIN
SOURCE
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
O
DRAIN
Value
BV
DSX
BV
DGX
±20V
-55 C to +150 C
O
TO-92 (N3)
GATE
GATE
TO-243AA (SOT-89) (N8)
Product Marking
DN
2 5 3 0
YYWW
300
O
C
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
DN5TW
W = Code for week sealed
= “Green” Packaging
TO-243AA (SOT-89) (N8)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
DN2530
Thermal Characteristics
Package
TO-243AA
TO-92
I
D
(continuous)
(mA)
†
I
D
(pulsed)
(mA)
Power Dissipation
@T
A
= 25 C
(W)
O
θ
jc
(
O
C/W)
θ
ja
(
O
C/W)
I
DR
†
(mA)
I
DRM
(mA)
200
175
500
500
1.6
‡
0.74
15
125
78
‡
170
200
175
500
500
Notes:
† I
D
(continuous) is limited by max rated T
j
.
‡ Mounted on FR4 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics
(T
Sym
BV
DSX
V
GS(OFF)
ΔV
GS(OFF)
I
GSS
I
D(OFF)
I
DSS
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
Gate-to-source off voltage
A
= 25
O
C unless otherwise specified)
Min
300
-1.0
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
600
Max
-
-3.5
-4.5
100
10
1.0
-
12
1.1
-
300
30
5
10
15
15
20
1.8
-
Units
V
V
mV/
O
C
nA
µA
mA
mA
Ω
%/
O
C
mmho
pF
Conditions
V
GS
= -5.0V, I
D
= 100µA
V
DS
= 25V, I
D
= 10µA
V
DS
= 25V, I
D
= 10µA
V
GS
= ±20V, V
DS
= 0V
V
DS
= Max rating, V
GS
= -10V
V
DS
= 0.8 Max Rating,
V
GS
= -10V, T
A
= 125
O
C
V
GS
= 0V, V
DS
= 25V
V
GS
= 0V, I
D
= 150mA
V
GS
= 0V, I
D
= 150mA
V
DS
= 10V, I
D
= 150mA
V
GS
= -10V,
V
DS
= 25V,
f = 1MHz
V
DD
= 25V,
I
D
= 150mA,
R
GEN
= 25Ω,
V
GS
= -10V, I
SD
= 150mA
V
GS
= -10V, I
SD
= 1.0A
Drain-to-source breakdown voltage
Change in V
GS(OFF)
with temperature
Gate body leakage current
Drain-to-source leakage current
Saturated drain-to-source current
Static drain-to-source on-state
resistance
Change in R
DS(ON)
with temperature
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
-
200
-
-
300
-
-
-
-
-
-
-
-
-
ns
V
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
90%
10%
t
(ON)
V
DD
PULSE
GENERATOR
R
L
OUTPUT
INPUT
-10V
t
(OFF)
t
r
t
d(OFF)
t
F
10%
t
d(ON)
V
DD
R
GEN
10%
90%
D.U.T.
INPUT
OUTPUT
0V
90%
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
DN2530
Typical Performance Curves
Output Characteristics
1.0
V
GS
= 1.0V
0.25
V
GS
= 1.0V
-0.5V
0V
-1.0V
Saturation Characteristics
0.8
0.2
0.5V
0.5V
I
D
(amperes)
I
D
(amperes)
0.6
0V
0.15
0.4
-0.5V
-1.0V
0.1
-1.5V
0.2
-1.5V
0.05
0
0
50
100
150
200
250
0
0
1
2
3
4
5
V
DS
(volts)
Transconductance vs. Drain Current
0.5
V
DS
(volts)
Power Dissipation vs. Case Temperature
2.0
V
DS
= 10V
0.4
T
A
= -55°C
1.6
TO-243AA
G
FS
(siemens)
0.3
P
D
(watts)
T
A
= 25°C
T
A
= 125°C
1.2
TO-92
0.8
0.2
0.1
0.4
0
0
0.05
0.1
0.15
0.2
0.25
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
1
TO-92 (pulsed)
1.0
T
C
(°C)
Thermal Response Characteristics
TO-243AA
Thermal Resistance (normalized)
0.8
T
A
= 25°C
P
D
= 1.6W
TO-92 (DC)
0.1
I
D
(amperes)
0.6
0.4
0.01
0.2
TO-92
T
C
= 25°C
P
D
= 1.0W
0.001
0.01
0.1
1
10
0.001
1
T
C
= 25°C
0
10
100
1000
V
DS
(volts)
t
p
(seconds)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
DN2530
Typical Performance Curves (cont.)
1.1
BV
DSS
Variation with Temperature
On-Resistance vs. Drain Current
50
V
GS
= 0V
1.05
V
GS
= -5V
I
D
= 100mA
40
BV
DSS
(normalized)
1.0
R
DS(on)
(ohms)
-50
0
50
100
150
30
0.95
20
0.9
10
0.85
0
0
0.2
0.4
0.6
0.8
1.0
T
j
(°C)
1.0
I
D
(amps)
V
GS
(Off) and R
DS
Variation with Temperature
Transfer Characteristics
2.5
0.8
V
DS
= 10V
T
A
= -55°C
2
0.6
V
GS(th)
(normalized)
I
D
(amperes)
T
A
= 25°C
R
DS (ON)
@ ID = 150mA
T
A
= 125°C
1.5
0.4
1
V
GS(OFF)
@ 10mA
0.2
0.5
0
-2
-1
0
1
2
0
-50
0
50
100
150
V
GS
(Volts)
Capacitance Vs. Drain-to-Source Voltage
200
T
j
(°C)
15
Gate Drive Dynamic Characteristics
V
GS
= -10V
150
C
ISS
10
V
DS
= 40V
C (picofarads)
100
V
GS
(volts)
5
V
DS
= 20V
250pF
50
0
C
OSS
0
0
C
RSS
10
20
30
40
152pf
-5
0
1
2
3
4
5
V
DS
(Volts)
Q
C
(Nanocoulombs)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
DN2530
3-Lead TO-92 Package Outline (N3)
D
A
Seating Plane
1
2
3
L
e1
e
b
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
†
-
.022
†
c
.014
†
-
.022
†
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the original JEDEC drawing. The value listed is for reference only.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version D080408.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
5
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