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DN2530N3-G P003

Description
MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size501KB,6 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
Download Datasheet Parametric Compare View All

DN2530N3-G P003 Overview

MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92

DN2530N3-G P003 Parametric

Parameter NameAttribute value
MakerMicrochip
Product CategoryMOSFET
technologySi
Installation styleThrough Hole
Package/boxTO-92-3
Number of channels1 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage300 V
Id-continuous drain current175 mA
Rds On - drain-source on-resistance12 Ohms
Vgs - gate-source voltage20 V
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
Pd-power dissipation740 mW
ConfigurationSingle
channel modeDepletion
EncapsulationCut Tape
EncapsulationReel
high5.33 mm
length5.21 mm
productMOSFET Small Signal
Transistor type1 N-Channel
width4.19 mm
Fall time20 ns
Rise Time15 ns
Factory packaging quantity2000
Typical shutdown delay time15 ns
Typical switch-on delay time10 ns
unit weight453.600 mg
DN2530
N-Channel Depletion-Mode
Vertical DMOS FETs
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
General Description
The DN2530 is a low threshold depletion-mode (normally-on)
transistor utilizing an advanced vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors and with the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Ordering Information
Device
DN2530
Package Options
TO-243AA (SOT-89)
DN2530N8-G
TO-92
DN2530N3-G
BV
DSX
/BV
DGX
(V)
R
DS(ON)
(max)
(Ω)
I
DSS
(min)
(mA)
300
12
200
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
DRAIN
SOURCE
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
O
DRAIN
Value
BV
DSX
BV
DGX
±20V
-55 C to +150 C
O
TO-92 (N3)
GATE
GATE
TO-243AA (SOT-89) (N8)
Product Marking
DN
2 5 3 0
YYWW
300
O
C
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
DN5TW
W = Code for week sealed
= “Green” Packaging
TO-243AA (SOT-89) (N8)
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com

DN2530N3-G P003 Related Products

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Description MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92 MOSFET N-Channel MOSFET 300V 0.175A 3P TO-92 MOSFET 300V 12Ohm MOSFET 300V 12Ohm MOSFET 300V 12Ohm MOSFET 300V 12Ohm Array/Network Resistor, Isolated, Metal Glaze/thick Film, 0.3W, 620000ohm, 100V, 2% +/-Tol, -100,100ppm/Cel,
Product Category MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET -
Configuration Single Single Single Single Single Single -
Rise Time 15 ns 15 ns 15 ns 15 ns 15 ns 15 ns -
Product Attribute - Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value -
Manufacturer - Microchip Microchip Microchip Microchip Microchip -
RoHS - Details N N N N -
Technology - Si Si Si Si Si -
Mounting Style - Through Hole Through Hole Through Hole Through Hole SMD/SMT -
Package / Case - TO-92-3 TO-92-3 TO-92-3 TO-92-3 SOT-89-3 -
Number of Channels - 1 Channel 1 Channel 1 Channel 1 Channel 1 Channel -
Transistor Polarity - N-Channel N-Channel N-Channel N-Channel N-Channel -
Vds - Drain-Source Breakdown Voltage - 300 V 300 V 300 V 300 V 300 V -
Id - Continuous Drain Current - 175 mA 175 mA 175 mA 175 mA 200 mA -
Rds On - Drain-Source Resistance - 12 Ohms 12 Ohms 12 Ohms 12 Ohms 12 Ohms -
Vgs - Gate-Source Voltage - 20 V 20 V 20 V 20 V 20 V -
Minimum Operating Temperature - - 55 C - 55 C - 55 C - 55 C - 55 C -
Maximum Operating Temperature - + 150 C + 150 C + 150 C + 150 C + 150 C -
Pd - Power Dissipation - 740 mW 740 mW 740 mW 740 mW 1.6 W -
Channel Mode - Depletion Depletion Depletion Depletion Depletion -
Height - 5.33 mm 5.33 mm 5.33 mm 5.33 mm 1.6 mm -
Length - 5.21 mm 5.21 mm 5.21 mm 5.21 mm 4.6 mm -
Product - MOSFET Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET Small Signal -
Transistor Type - 1 N-Channel 1 N-Channel 1 N-Channel 1 N-Channel 1 N-Channel -
Width - 4.19 mm 4.19 mm 4.19 mm 4.19 mm 2.6 mm -
Fall Time - 20 ns 15 ns 15 ns 15 ns 15 ns -
Factory Pack Quantity - 2000 2000 2000 1000 2000 -
Typical Turn-Off Delay Time - 15 ns 15 ns 15 ns 15 ns 15 ns -
Typical Turn-On Delay Time - 10 ns 10 ns 10 ns 10 ns 10 ns -
Unit Weight - 0.016000 oz 0.007760 oz 0.007760 oz 0.007760 oz 0.001862 oz -
Type - - FET FET FET FET -
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