IRFB9N30A, SiHFB9N30A
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
33
6.9
12
Single
D
FEATURES
300
0.45
• Dynamic dv/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220
DESCRIPTION
G
S
G
D
S
N-Channel MOSFET
Third Generation Power MOSFETs from Vishay provides the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost
effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at lower dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRFB9N30APbF
SiHFB9N30A-E3
IRFB9N30A
SiHFB9N30A
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Current
a
Energy
b
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
6-32 or M3 screw
LIMIT
± 30
9.3
5.9
37
0.77
160
9.3
9.6
96
4.6
- 55 to + 150
300
d
10
1.1
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
A
UNIT
V
Linear Derating Factor
Single Pulse Avalanche
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery
dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 3.7 mH, R
G
= 25
Ω,
I
AS
= 9.3 A (see fig. 12).
c. I
SD
≤
9.3 A, dI/dt
≤
270 A/μs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91102
S09-0062-Rev. A, 02-Feb-09
www.vishay.com
1
IRFB9N30A, SiHFB9N30A
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
1.3
UNIT
°C/W
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
C
iss
C
oss
C
rss
C
oss
C
oss eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
DD
= 150 V, I
D
= 9.3 A
R
G
= 12
Ω,
R
D
= 16
Ω,
see fig.
Between lead,
6 mm (0.25") from
package and center of
10
b
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
=
±
30
V
DS
= 300 V, V
GS
= 0 V
V
DS
= 240 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 5.6 A
b
A
b
V
DS
= 50 V, I
D
= 5.6
300
-
2.0
-
-
-
-
6.6
-
-
-
-
-
-
-
-
0.38
-
-
-
-
-
-
920
160
8.7
1200
52
102
-
-
-
10
25
35
29
4.5
7.5
-
-
4.0
±
100
25
250
0.45
-
-
-
-
-
-
-
33
6.9
12
-
-
-
-
-
-
V
V/°C
V
nA
µA
Ω
S
V
GS
= 0 V,
V
DS
= 25 V
f = 1.0 MHz, see fig. 5
V
GS
= 0 V, V
DS
= 1.0 V, f = 1.0 MHz
V
GS
= 0 V, V
DS
= 240 V, f = 1.0 MHz
V
GS
= 0 V, V
DS
= 0 V to 240 V
I
D
= 9.3 A, V
DS
= 240 V,
see fig. 6 and 13
b
pF
V
GS
= 10 V
-
-
-
-
-
-
-
-
nC
ns
nH
G
S
D
-
-
-
-
-
280
1.5
9.3
37
1.5
420
2.3
A
G
S
T
J
= 25 °C, I
S
= 9.3 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 9.3 A, di/dt = 100 A/µs
b
-
-
-
V
ns
µC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
c. C
oss
eff. ia a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 % to 80% V
DS
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Document Number: 91102
S09-0062-Rev. A, 02-Feb-09
IRFB9N30A, SiHFB9N30A
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
T
J
= 25
°
C
T
J
= 150
°
C
10
10
4.5V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
1
4.0
V DS = 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
V
DS
, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
V
GS
, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
100
3.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
, Drain-to-Source Current (A)
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I
D
= 9.3A
2.5
2.0
10
1.5
4.5V
1.0
0.5
1
1
10
20µs PULSE WIDTH
T
J
= 150
°
C
100
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
DS
, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
T
J
, Junction Temperature (
°
C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91102
S09-0062-Rev. A, 02-Feb-09
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3
IRFB9N30A, SiHFB9N30A
Vishay Siliconix
100 000
10 000
I
SD
, Reverse Drain Current (A)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
100
C, Capacitance (pF)
1000
C
iss
C
oss
C
rss
10
T
J
= 150
°
C
T
J
= 25
°
C
1
100
10
1
1
10
100
1000
A
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
V
SD
,Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
20
I
D
= 9.3A
V
DS
= 240V
V
DS
= 150V
V
DS
= 60V
100
V
GS
, Gate-to-Source Voltage (V)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
16
I
D
, D r a in C u r r e n t ( A )
10
100us
12
8
1ms
1
10ms
4
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
0.1
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
1000
Q
G
, Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
V
DS
, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91102
S09-0062-Rev. A, 02-Feb-09
IRFB9N30A, SiHFB9N30A
Vishay Siliconix
r
D
V
DS
V
GS
D.U.T.
+
-
V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
10.0
8.0
r
G
I
D
, Drain Current (A)
6.0
4.0
Fig. 10a - Switching Time Test Circuit
V
DS
2.0
90 %
0.0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 10b - Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
V
DS
15
V
t
p
V
DS
L
Driver
R
G
20
V
t
p
D.U.T.
I
AS
0.01
Ω
+
A
-
V
DD
I
AS
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91102
S09-0062-Rev. A, 02-Feb-09
Fig. 12b - Unclamped Inductive Waveforms
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