BC848BW / BC848B / BC848C
Transistors
NPN General Purpose Transistor
BC848BW / BC848B / BC848C
!
Features
1) BV
CEO
minimum is 30V (I
C
=1mA)
2) Complements the BC858B / BC858BW.
!
External dimensions
(Units : mm)
BC848BW
2.0±0.2
1.3±0.1
0.65 0.65
(1)
(2)
0.2
0.9±0.1
0.7±0.1
1.25
±
0.1
2.1
±
0.1
0~0.1
(3)
ROHM : UMT3
EIAJ : SC-70
+0.1
0.3
−0
0.15±0.05
All terminals have same dimensions
0.1~0.4
(1) Emitter
(2) Base
(3) Collector
BC848B, BC848C
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
0.95
+0.2
−0.1
0.45±0.1
2.4
±
0.2
1.3
+0.2
−0.1
0~0.1
0.2Min.
(3)
+0.1
0.4
−0.05
+0.1
0.15
−0.06
All terminals have same dimensions
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
!
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
30
5
0.1
0.2
0.35
150
−55~+150
Unit
V
V
V
A
W
°C
°C
∗
∗
When mounted on a 7×5×0.6mm ceramic board.
!
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Collector output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
V
CE(sat)
V
BE(on)
h
FE
f
T
Cob
Cib
Min.
30
30
5
−
−
−
−
0.58
200
420
−
−
−
Typ. Max. Unit
Conditions
V
I
C
=50µA
−
−
V
I
C
=1mA
−
−
V
I
E
=50µA
−
−
15
V
CB
=30V
−
µA
5
V
CB
=30V,
Ta=150°C
−
0.25
I
C
/I
B
=10mA/0.5mA
−
V
0.6
I
C
/I
B
=100mA/5mA
−
0.77
V
V
CE
/I
C
=5V/10mA
−
450
V
CE
/I
C
=5V/2mA
(BC848B/BW)
−
−
800
V
CE
/I
C
=5V/2mA
(BC848C)
−
MHz V
CE
=5V,
I
E
=−20mA,
f=100MHz
200
−
pF V
CB
=10V,
I
E
=0,
f=1MHz
3
−
pF V
EB
=0.5V,
I
E
=0,
f=1MHz
8
−
(SPEC-C22)
1/5
BC848BW / BC848B / BC848C
Transistors
!
Packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
BC848BW
UMT3
G1K
T106
3000
BC848B
SST3
G1K
T116
3000
BC848C
SST3
G1L
T116
3000
!
Electrical characteristic curves
100
Ta=25°C
I
C
−COLLECTOR
CURRENT (mA)
10.0
I
C
-COLLECTOR CURRENT (mA)
1.2
1.0
0.8
0.6
35
30
80
8.0
25
6.0
20
15
10
2.0
5
I
B
=0µA
Ta=25°C
0
0
2.0
1.0
V
CE
-COLLECTOR-EMITTER VOLTAGE (V)
60
0.4
0.2
40
4.0
0.1
20
I
B
=0mA
0
0
2.0
1.0
V
CE
−COLLECTOR-EMITTER
VOLTAGE (V)
Fig.1 Grounded emitter output
characteristics ( )
Fig.2 Grounded emitter output
characteristics ( )
1000
Ta=25°C
h
FE
-DC CURRENT GAIN
V
CE
=10V
1V
5V
100
10
0.1
1.0
10
I
C
-COLLECTOR CURRENT (mA)
100
1000
Fig.3 DC current gain vs. collector current ( )
1000
V
CE
=5V
h
FE
-DC CURRENT GAIN
Ta=125°C
Ta=25°C
Ta=−55°C
100
10
0.1
1.0
10
I
C
-COLLECTOR CURRENT (mA)
100
1000
Fig.4 DC current gain vs. collector current ( )
2/5
BC848BW / BC848B / BC848C
Transistors
1000
Ta=25°C
V
CE
=5V
f=1kHz
h
FE
-AC CURRENT GAIN
100
10
0.01
0.1
1
I
C
-COLLECTOR CURRENT (mA)
10
100
Fig.5 AC current gain vs. collector current
V
BE(SAT)
BASE EMITTER SATURATION VOLTAGE (V)
0.18
V
CE(SAT)
COLLECTOR EMITTER SATURATION VOLTAGE (V)
0.16
V
BE(ON)
BASE EMITTER VOLTAGE (V)
Ta=25°C
I
C
/I
B
=10
1.8
1.6
Ta=25°C
I
C
/I
B
=10
1.8
1.6
Ta=25°C
V
CE
=5V
0.12
1.2
1.2
0.08
0.8
0.8
0.04
0.4
0.4
0
0.1
1.0
10
I
C
-COLLECTOR CURRENT (mA)
100
0
0.1
1.0
10
I
C
-COLLECTOR CURRENT (mA)
100
0
0.1
1.0
10
I
C
-COLLECTOR CURRENT (mA)
100
Fig.6 Collector-emitter saturation
voltage vs. collector current
Fig.7 Base-emitter saturation
voltage vs. collector current
Fig.8 Grounded emitter propagation
characteristics
1000
Ta=25°C
I
C
/I
B
=10
1000
Ta=25°C
I
C
/I
B
=10
1000
40V
3V
Ta=25°C
I
C
=101
B1
=101
B2
t
on
-TURN ON TIME (ns)
t
S
-STORAGE TIME (ns)
t
r
-RISE TIME (ns)
V
CE
=15V
100
100
V
CC
=40V
100
10
1.0
10
I
C
-COLLECTOR CURRENT (mA)
100
10
1.0
10
I
C
-COLLECTOR CURRENT (mA)
100
10
1.0
10
I
C
-COLLECTOR CURRENT (mA)
100
Fig.9 Turn-on time vs. collector
current
Fig.10 Rise time vs. collector
current
Fig.11 Storage time vs. collector
current
3/5
BC848BW / BC848B / BC848C
Transistors
V
CE
COLLECTOR-EMITTER VOLTAGE (V)
1000
Ta=25°C
V
CC
=40V
I
C
=101
B1
=101
B2
100
Ta=25°C
f=1MHz
50 100MHz 200MHz 300MHz 400MHz
Ta=25°C
CAPACITANCE (pF)
400MHz
t
f
-FALL TIME (ns)
100
10
Cib
5.0
300MHz
200MHz
100MHz
Cob
10
1.0
10
I
C
-COLLECTOR CURRENT (mA)
100
1
0.5
1
10
REVERSE BIAS VOLTAGE (V)
50
0.5
0.5
10
100
I
C
-COLLECTOR CURRENT (mA)
500
Fig.12 Fall time vs. collector
current
Fig.13 Input/output capacitance
vs. voltage
Fig.14 Gain bandwidth product
CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
h PARAMETER NORMALIZED TO 1mA
Ta=25°C
V
CE
=5V
Ta=25°C
V
CE
=6V
f=270Hz
hoe
I
CBO
-COLLECTOR CUTOFF CURRENT (A)
1000
100
10n
V
CB
=30V
1n
10
hie
hre
hfe
hre
100P
100
hfe
I
C
=1mA
hie=7.8kΩ
hfe=280
hie
hre=4.5×10
−5
hoe=7.5µS
100
10P
1
hoe
0.1
0.1
1P
10
0.5 1.0
10
100
I
C
-COLLECTOR CURRENT (mA)
500
1
10
I
C
-COLLECTOR CURRENT (mA)
0.1P
0
25
50
75
100
125
T
A
-AMBIENT TEMPERATURE (°C)
150
Fig.15 Gain bandwidth product
vs. collector current
Fig.16 h parameter
vs. collector current
Fig.17 Collector cutoff current
12
10
R
S
-SOURCE RESISTANCE (Ω)
NF NOISE FIGURE (dB)
Ta=25°C
V
CE
=5V
I
C
=100µA
R
S
=10kΩ
100k
Ta=25°C
V
CE
=5V
f=10Hz
dB
12
B
8d
B
5d
B
3d
NF
10k
dB
=
1
8
6
4
2
0
10
1k
100
1k
f-FREQUENCY (Hz)
10k
100k
100
0.01
0.1
1
I
C
-COLLECTOR CURRENT (mA)
10
Fig.18 Noise vs. collector current
Fig.19 Noise characteristics ( )
4/5
BC848BW / BC848B / BC848C
Transistors
100k
R
S
-SOURCE RESISTANCE (Ω)
R
S
-SOURCE RESISTANCE (Ω)
R
S
-SOURCE RESISTANCE (Ω)
Ta=25°C
V
CE
=5V
f=30Hz
100k
100k
B
8d
dB
12
12
dB
8d
B
5d
B
=
NF
3d
B
B
5d
B
3d
B
8d
B
5d
10k
Ta=25°C
V
CE
=5V
10k f=1kHz
Ta=25°C
V
CE
=5V
10k f=10kHz
B
3d
dB
=
1
NF
NF
dB
=
1
1d
B
1k
1k
1k
100
0.01
0.1
1
I
C
-COLLECTOR CURRENT (mA)
10
100
0.01
0.1
1
I
C
-COLLECTOR CURRENT (mA)
10
100
0.01
0.1
1
I
C
-COLLECTOR CURRENT (mA)
10
Fig.20 Noise characteristics ( )
Fig.21 Noise characteristics (
)
Fig.22 Noise characteristics (
)
5/5
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