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Datasheet> All Categories > semiconductor> Discrete semiconductor> BUK7K89-100EX
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BUK7K89-100EX

Description
MOSFET BUK7K89-100E/LFPAK56D/REEL 7
Categorysemiconductor    Discrete semiconductor   
File Size4MB，60 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BUK7K89-100EX Overview

MOSFET BUK7K89-100E/LFPAK56D/REEL 7

BUK7K89-100EX Parametric

Parameter NameAttribute value
Product AttributeAttribute Value
ManufacturerNXP
Product CategoryMOSFET
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseLFPAK56D-8
Number of Channels2 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage100 V, 100 V
Id - Continuous Drain Current13 A, 13 A
Rds On - Drain-Source Resistance61 mOhms, 61 mOhms
Vgs th - Gate-Source Threshold Voltage2.4 V, 2.4 V
Vgs - Gate-Source Voltage20 V, 20 V
Qg - Gate Charge13.6 nC, 13.6 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
ConfigurationDual
Pd - Power Dissipation38 W
Channel ModeEnhancement
PackagingCut Tape
PackagingMouseReel
PackagingReel
Transistor Type2 N-Channel
Fall Time7.3 ns, 7.3 ns
NumOfPackaging3
Rise Time5.9 ns, 5.9 ns
Factory Pack Quantity1500
Typical Turn-Off Delay Time12 ns, 12 ns
Typical Turn-On Delay Time4.6 ns, 4.6 ns

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Power MOSFET
Selection Guide 2013
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BUK7K89-100EX Related Products

BUK7K89-100EX BUK7K17-60EX BUK9K32-100EX BUK7K12-60EX BUK7K45-100EX BUK9K134-100EX
Description MOSFET BUK7K89-100E/LFPAK56D/REEL 7 MOSFET BUK7K17-60E/LFPAK56D/REEL 7" Q MOSFET Dual N-channel 100 V MOSFET Dual N-channel 60V Mosfet MOSFET BUK7K45-100E/LFPAK56D/REEL 7 MOSFET BUK9K134-100E/LFPAK56D/REEL 7
Product Attribute Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value Attribute Value
Manufacturer NXP NXP NXP NXP NXP NXP
Product Category MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET
Technology Si Si Si Si Si Si
Mounting Style SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT
Package / Case LFPAK56D-8 LFPAK33-5 LFPAK33-5 LFPAK33-5 LFPAK56D-8 LFPAK56D-8
Number of Channels 2 Channel 2 Channel 2 Channel 2 Channel 2 Channel 2 Channel
Transistor Polarity N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Vds - Drain-Source Breakdown Voltage 100 V, 100 V 60 V 100 V 60 V 100 V, 100 V 100 V, 100 V
Id - Continuous Drain Current 13 A, 13 A 30 A 26 A 40 A 21.4 A, 21.4 A 8.5 A, 8.5 A
Rds On - Drain-Source Resistance 61 mOhms, 61 mOhms 12 mOhms 26.6 mOhms 9.3 mOhms 30 mOhms, 30 mOhms 127 mOhms, 127 mOhms
Configuration Dual Dual Dual Dual Dual Dual
Transistor Type 2 N-Channel 2 N-Channel 2 N-Channel 2 N-Channel 2 N-Channel 2 N-Channel
Factory Pack Quantity 1500 1500 1500 1500 1500 1500
RoHS Details - Details Details Details Details
Vgs th - Gate-Source Threshold Voltage 2.4 V, 2.4 V - 1.7 V 3 V 2.4 V, 2.4 V 1.4 V, 1.4 V
Vgs - Gate-Source Voltage 20 V, 20 V - 15 V 20 V 20 V, 20 V 10 V, 10 V
Qg - Gate Charge 13.6 nC, 13.6 nC - 27.3 nC 34.2 nC 25.9 nC, 25.9 nC 7.4 nC, 7.4 nC
Minimum Operating Temperature - 55 C - - 55 C - 55 C - 55 C - 55 C
Maximum Operating Temperature + 175 C - + 175 C + 175 C + 175 C + 175 C
Pd - Power Dissipation 38 W - 64 W 68 W 53 W 32 W
Channel Mode Enhancement - Enhancement Enhancement Enhancement Enhancement
Packaging Reel Reel Reel Reel Reel Reel
Fall Time 7.3 ns, 7.3 ns - 23.1 ns 15 ns 13.9 ns, 13.9 ns 10.3 ns, 10.3 ns
Rise Time 5.9 ns, 5.9 ns - 22 ns 12.5 ns 11.2 ns, 11.2 ns 11.3 ns, 11.3 ns
Typical Turn-Off Delay Time 12 ns, 12 ns - 39.5 ns 23 ns 20.3 ns, 20.3 ns 12 ns, 12 ns
Typical Turn-On Delay Time 4.6 ns, 4.6 ns - 12.6 ns 9.1 ns 6.2 ns, 6.2 ns 6.2 ns, 6.2 ns

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