TISP4CXXXH3BJ datasheet, PDF - EEWORLD Datasheet

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TISP4CXXXH3BJ: DescriptionLOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS; File Size175KB，4 Pages; ManufacturerBourns; Websitehttp://www.bourns.com

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TISP4CXXXH3BJ Overview

LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

TISP4CXXXH3BJ Preview

oH

V SC

AV ER OM

AI SIO PL

LA N IA

BL S NT

E

TISP4C125H3BJ THRU TISP4C395H3BJ

LOW CAPACITANCE

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

*R

TISP4CxxxH3BJ Overvoltage Protector Series

Ion-Implanted Breakdown Region

- Precise and Stable Voltage

- Low Voltage Overshoot under Surge

- Low Off-State Capacitance

Device Name

TISP4C125H3BJ

TISP4C145H3BJ

TISP4C180H3BJ

TISP4C220H3BJ

TISP4C250H3BJ

TISP4C290H3BJ

TISP4C350H3BJ

TISP4C395H3BJ

V

DRM

V

100

120

145

180

190

220

275

320

V

(BO)

V

125

145

180

220

250

290

350

395

MD-SMB-004-a

SMB Package (Top View)

R 1

2 T

Device Symbol

T

Rated for International Surge Wave Shapes

Wave Shape

2/10

10/160

10/700

10/560

10/1000

Standard

GR-1089-CORE

TIA-968-A

ITU-T K.20/21/45

TIA-968-A

GR-1089-CORE

I

PPSM

A

500

200

150

100

100

R

SD-TISP4xxx-001-a

....... TISP4C290H3BJ, TISP4C350H3BJ & TISP4C395H3BJ

are UL Recognized Components

Description

This device is designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash

disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the

protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of

devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until

the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the

current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the

diverted current subsides.

Please contact your Bourns representative if the protection voltage you require is not listed.

How to Order

For Standard

Termination Finish

Order As

TISP4CxxxH3BJR

For Lead Free

Termination Finish

Marking

Code

Order As

TISP4CxxxH3BJR-S 4CxxxH

Device

TISP4CxxxH3BJ

Package

SMB

Carrier

Embossed Tape Reeled

Std. Qty.

3000

Insert xxx corresponding to device name.

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex

SEPTEMBER 2004 – REVISED FEBRUARY 2006

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP4CxxxH3BJ Overvoltage Protector Series

Absolute Maximum Ratings, TA = 25

°

C (Unless Otherwise Noted)

Rating

'4C125H3BJ

'4C145H3BJ

'4C180H3BJ

'4C220H3BJ

'4C250H3BJ

'4C290H3BJ

'4C350H3BJ

'4C395H3BJ

Symbol

Value

±100

±120

±145

±180

±190

±220

±275

±320

±500

±200

±150

±100

±100

30

2.1

-40 to +150

-65 to +150

Unit

Repetitive peak off-state voltage

V

DRM

V

Non-repetitive peak impulse current (see Notes 1 and 2)

2/10

µs

(GR-1089-CORE, 2/10

µs

voltage wave shape)

10/160

µs

(TIA-968-A, 10/160

µs

voltage wave shape)

5/310

µs

(ITU-T K.44, 10/700

µs

voltage wave shape used in K.20/21/45)

10/560

µs

(TIA-968-A, 10/560

µs

voltage wave shape)

10/1000

µs

(GR-1089-CORE, 10/1000

µs

voltage wave shape)

Non-repetitive peak on-state current (see Notes 1, 2 and 3)

20 ms, 50 Hz (full sine wave)

1000 s, 50 Hz

Junction temperature

Storage temperature range

I

TSM

T

J

T

stg

A

°C

°C

I

PPSM

A

NOTES: 1. Initially the device must be in thermal equilibrium with T

J

= 25

°C.

2. The surge may be repeated after the device returns to its initial conditions.

3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring

track widths.

Electrical Characteristics, TA = 25

°

C (Unless Otherwise Noted)

Parameter

I

DRM

Repetitive peak off-state current

V

D

= V

DRM

Test Conditions

T

A

= 25

°C

T

A

= 85

°C

'4C125H3BJ

'4C145H3BJ

'4C180H3BJ

'4C220H3BJ

'4C250H3BJ

'4C290H3BJ

'4C350H3BJ

'4C395H3BJ

'4C125H3BJ

'4C145H3BJ

'4C180H3BJ

'4C220H3BJ

'4C250H3BJ

'4C290H3BJ

'4C350H3BJ

'4C395H3BJ

Min

Typ

Max

±5

±10

±125

±145

±180

±220

±250

±290

±350

±395

±135

±155

±190

±230

±260

±300

±360

±405

±600

±3

±150

'4C125H3BJ

'4C145H3BJ

'4C180H3BJ

'4C220H3BJ

'4C250H3BJ

'4C290H3BJ

'4C350H3BJ

'4C395H3BJ

±600

50

Unit

µA

V

(BO)

Breakover voltage

dv/dt =

±250

V/ms, R

SOURCE

= 300

Ω

V

V

(BO)

Impulse breakover voltage

dv/dt

≤

±1000

V/µs, Linear voltage ramp,

Maximum ramp value =

±500

V

di/dt =

±10

A/µs, Linear current ramp,

Maximum ramp value =

±10

A

dv/dt =

±250

V/ms, R

SOURCE

= 300

Ω

I

T

=

±5

A, t

w

= 100

µs

I

T

=

±5

A, di/dt =

±30

mA/ms

V

I

(BO)

V

T

I

H

Breakover current

On-state voltage

Holding current

mA

V

mA

45

pF

C

O

Off-state capacitance

f = 1 MHz, V

d

= 1 V rms, V

D

= -2 V

40

SEPTEMBER 2004 – REVISED FEBRUARY 2006

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP4CxxxH3BJ Overvoltage Protector Series

Thermal Characteristics, TA = 25

°

C (Unless Otherwise Noted)

Parameter

Test Conditions

EIA/JESD51-3 PCB, I

T

= I

TSM(1000)

(see Note 4)

265 mm x 210 mm populated line card,

4-layer PCB, I

T

= I

TSM(1000)

NOTE:

50

Min

Typ

Max

113

°C/W

Unit

R

θJA

Junction to ambient thermal resistance

4. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

Parameter Measurement Information

+i

I

PPSM

Quadrant I

Switching

Characteristic

I

TSM

I

TRM

I

T

V

T

I

H

V

(BR)M

-v

I

(BR)

V

(BR)

I

(BO)

V

DRM

I

DRM

V

D

I

D

I

D

V

D

V

(BO)

I

(BO)

I

DRM

V

DRM

V

(BR)M

V

(BR)

I

(BR)

+v

I

H

V

(BO)

V

T

I

T

I

TRM

Quadrant III

Switching

Characteristic

-i

I

TSM

I

PPSM

PM-TISP4xxx-001-a

Figure 1. Voltage-Current Characteristic for T and R Terminals

All Measurements are Referenced to the R Terminal

SEPTEMBER 2004 – REVISED FEBRUARY 2006

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

TISP4CxxxH3BJ Overvoltage Protector Series

Typical Characteristics

1.1

1.0

Capacitance Normalized to V

D

= 2 V

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1

NORMALIZED CAPACITANCE

vs

OFF-STATE VOLTAGE

TC-TISP4C-002-a

T

J

= 25

°C

V

d

= 1 Vrms

10

V

D

- Off-state Voltage - V

100

“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.

“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.

SEPTEMBER 2004 – REVISED FEBRUARY 2006

Specifications are subject to change without notice.

Customers should verify actual device performance in their specific applications.

More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

TISP4CXXXH3BJ Related Products

	TISP4CXXXH3BJ	TISP4C145H3BJ	TISP4C350H3BJ	TISP4C290H3BJ	TISP4C395H3BJ	TISP4C250H3BJ	TISP4C220H3BJ	TISP4C180H3BJ	TISP4C125H3BJ
Description	LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS	LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS	LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS	LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS	LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS	LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS	LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS	LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS	LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Is it lead-free?	-	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	-	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	-	SMALL OUTLINE, R-PDSO-G2	SMALL OUTLINE, R-PDSO-G2	SMALL OUTLINE, R-PDSO-G2	SMALL OUTLINE, R-PDSO-C2	SMALL OUTLINE, R-PDSO-G2	SMALL OUTLINE, R-PDSO-G2	SMALL OUTLINE, R-PDSO-G2	SMALL OUTLINE, R-PDSO-G2
Contacts	-	2	2	2	2	2	2	2	2
Reach Compliance Code	-	_compli	_compli	_compli	_compli	_compli	_compli	_compli	_compli
ECCN code	-	EAR99	-	EAR99	-	EAR99	EAR99	EAR99	EAR99
Other features	-	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Maximum breakover voltage	-	145 V	350 V	290 V	395 V	250 V	220 V	180 V	125 V
Configuration	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum off-state DC voltage	-	120 V	275 V	220 V	320 V	190 V	180 V	145 V	100 V
JESD-30 code	-	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2	R-PDSO-C2	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2	R-PDSO-G2
On-state non-repetitive peak current	-	30 A	30 A	30 A	30 A	30 A	30 A	30 A	30 A
Number of components	-	1	1	1	1	1	1	1	1
Number of terminals	-	2	2	2	2	2	2	2	2
Maximum operating temperature	-	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	-	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	-	GULL WING	GULL WING	GULL WING	C BEND	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	-	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Trigger device type	-	SILICON SURGE PROTECTOR	SILICON SURGE PROTECTOR	SILICON SURGE PROTECTOR	SILICON SURGE PROTECTOR	SILICON SURGE PROTECTOR	SILICON SURGE PROTECTOR	SILICON SURGE PROTECTOR	SILICON SURGE PROTECTOR
Base Number Matches	-	1	1	1	1	1	1	1	1

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