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TISP8250D
UNIDIRECTIONAL P-GATE THYRISTOR
OVERVOLTAGE AND OVERCURRENT PROTECTOR
*R
TISP8250D Overvoltage and Overcurrent Protector
Telecommunication System 30 A 10/1000 Protector
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
Device Name
TISP8250D
V
DRM
V
250
V
(BO)
V
340
8-SOIC Package (Top View)
G
NC
NC
K
1
2
3
4
8
7
6
5
A
A
A
A
MD8XAAA
NC - No internal connection
Rated for International Surge Wave Shapes
Wave Shape
2/10
0.5/700
10/700
10/1000
Standard
GR-1089-CORE
CNET I 31-24
ITU-T K.20/21
GR-1089-CORE
I
PPSM
A
75
40
40
30
Device Symbol
A
Functional Replacement for TPP25011
.............................................. UL Recognized Component
G
SD8XAA
K
Description
The TISP8250D is a P-gate reverse-blocking thyristor (SCR) designed for the protection of telecommunications equipment against
overvoltages and overcurrents on the telephone line caused by lightning, a.c. power contact and induction. The fixed voltage and current
triggered modes make the TISP8250D particularly suitable for the protection of ungrounded customer premise equipment. Connected
across the d.c. side of a telephone set polarity bridge, in fixed voltage mode these devices can protect the ringer in the on-h ook condition.
In an off-hook condition, either the fixed voltage or current triggered modes can protect the following telephone electronics.
Without external gate activation, the TISP8250D is a fixed voltage protector. The maximum working voltage without clipping is 250 V and
the protection voltage is 340 V. Lower values of protection voltage may be set by connecting an avalanche breakdown diode of le ss than
250 V between the TISP8250D gate and anode (see Figure 2.)
By connecting a small value resistor in series with the line conductor and connecting the TISP8250D gate cathode terminals in p arallel with
the resistor, conductor overcurrents can gate trigger the TISP8250D into conduction.
Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the devic e to crowbar
into a low-voltage on state. Overcurrents develop sufficient voltage across the external gate-cathode resistor to trigger the d evice into a
low-voltage on state. This low-voltage on state causes the current resulting from the overstress to be safely diverted through the device.
The high crowbar holding current helps prevent d.c. latchup as the diverted current subsides.
How To Order
Marking
Code
8250
Standard
Quantity
2500
Device
TISP8250D
Package
8-SOIC
Carrier
Embossed Tape Reeled
Order As
TISP8250DR-S
WARNING Cancer and Reproductive Harm
www.P65Warnings.ca.gov
JULY 2000 - REVISED JULY 2008
*RoHS Directive 2002/95/EC Jan. 27, 2003 including Annex.
Specifications are subject to change without notice. Users should verify actual device performance in their specific
applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the
last page of this document, and at
www.bourns.com/docs/legal/disclaimer.pdf.
TISP8250D Overvoltage and Overcurrent Protector
Absolute Maximum Ratings, TA = 25
°
C (Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage (see Note 1)
Non-repetitive peak impulse current (see Notes 2, 3 and 4)
2/10
μs
(Telcordia GR-1089-CORE, 2/10
μs
waveshape)
0.2/310 (CNET I 31-24, 0.5/700
μs
waveshape)
5/310
μs
(ITU-T K.20/21, 10/700
μs
voltage waveshape)
5/310
μs
(FTZ R12, 10/700
μs
voltage waveshape)
10/1000
μs
(Telcordia GR-1089-CORE, 10/1000
μs
voltage waveshape)
Non-repetitive peak on-state current, 50 Hz (see Notes 2, 3 and 4)
10 ms half sine wave
1s rectified sine wave
1000 s rectified sine wave
Junction temperature
Storage temperature range
NOTES: 1.
2.
3.
4.
I
TSM
T
J
T
stg
5
3.5
0.7
-40 to +150
-65 to +150
A
75
40
40
40
30
Symbol
V
DRM
Value
250
Unit
V
I
PPSM
A
°
C
°
C
For voltage values at lower temperatures, derate at 0.13 %/
°
C.
Initially the device must be in thermal equilibrium, with T
J
= 25
°
C.
The surge may be repeated after the device returns to its initial conditions.
EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A printed wiring track
widths. Derate current values at -0.61 %/
°
C for ambient temperatures above 25
°
C.
Electrical Characteristics, TA = 25
°
C (Unless Otherwise Noted)
Parameter
I
DRM
V
(BO)
I
(BO)
I
H
V
GK
I
GT
I
D
C
O
Repetitive peak off-state current
Breakover voltage
Breakover current
Holding current
Gate-cathode voltage
Gate trigger current
Off-state current
Off-state capacitance
V
D
= V
DRM
dv/dt = 250 V/ms, R
SOURCE
= 300
Ω
dv/dt = 250 V/ms, R
SOURCE
= 300
Ω
I
T
= 5 A, di/dt = -30 mA/ms
I
G
= 30 mA
V
AK
= 100 V
V
D
= 60 V
f = 1 MHz, V
d
= 1 V rms, V
D
= 5 V
15
180
0.6
1.2
40
5
100
Test Conditions
T
A
= 25
°
C
T
A
= 85
°
C
Min Typ Max Unit
5
10
340
μA
V
mA
V
mA
μA
pF
200 mA
Thermal Characteristics, TA = 25
°
C (Unless Otherwise Noted)
Parameter
R
θ
JA
NOTE
Junction to ambient thermal resistance
Test Conditions
EIA/JESD51-3 PCB, I
T
= I
TSM(1000)
(see Note 5)
Min Typ Max
Unit
170
°
C/W
5. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5A rated printed wiring track widths.
JULY 2000 - REVISED JULY 2008
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at
www.bourns.com/docs/legal/disclaimer.pdf.
TISP8250D Overvoltage and Overcurrent Protector
Parameter Measurement Information
+i
Quadrant I
Anode Positive
Switching Characteristic
V
(BO)
I
H
I
(BO)
I
D
-v
I
DRM
+v
V
D
Quadrant III
V
DRM
Anode Negative
Reverse Characteristic
PM8XAAA
-i
Figure 1. Voltage-Current Characteristic for A and K Terminals
All Measurements are Referenced to the K Terminal
Avalanche
diode
V
(BR)
< 250 V
G
A
TISP-
8250D
K
AI8XACAa
Figure 2. Overvoltage Protection Circuit
JULY 2000 - REVISED JULY 2008
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at
www.bourns.com/docs/legal/disclaimer.pdf.
Bourns Sales Offices
Region
The Americas:
Europe:
Asia-Pacific:
Phone
+1-951-781-5500
+41-41-7685555
+886-2-25624117
Fax
+1-951-781-5700
+41-41-7685510
+886-2-25624116
Technical Assistance
Region
The Americas:
Europe:
Asia-Pacific:
Phone
+1-951-781-5500
+41-41-7685555
+886-2-25624117
Fax
+1-951-781-5700
+41-41-7685510
+886-2-25624116
www.bourns.com
Bourns
®
products are available through an extensive network of manufacturer’s representatives, agents and distributors.
To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
JULY 2000 - REVISED JULY 2008
Specifications are subject to change without notice.
Users should verify actual device performance in their specific applications.
The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at
www.bourns.com/docs/legal/disclaimer.pdf.
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