EM6415
Absolute Maximum Ratings
Parameter
Supply Voltage
Voltage at
remaining pins
Storage
temperature
Operating
temperature
Soldering
Temperature*Time
Symbol
V
DD
V
PIN
T
store
T
op
TS
MAX
Min
-0.3
V
SS
-0.3
-55
-40
Max
5.5
V
DD
+0.3
150
+85
250
⋅
10
Unit
V
V
°C
°C
°C⋅s
Stresses above these listed maximum ratings may cause
permanent damages to the device. Exposure beyond
specified operating conditions may affect device reliability
or cause malfunction.
Handling Procedures
This device has built-in protection against high static
voltages or electric fields; however, anti-static precautions
must be taken as for any other CMOS component. Unless
otherwise specified, proper operation can only occur when
all terminal voltages are kept within the voltage range.
Unused inputs must always be tied to a defined logic
voltage level.
Electrical Characteristics
Operating Conditions (unless othewise specified)
Positive supply
V
DD
V
SS
Negative supply
T
Ambient temperature
Sensor resistance
R
SEN
Power Supply
Parameter
Operating Voltage Range
Current Consumption
Symbol
V
DD
I
DD1
I
DD2
=
=
=
=
3.0V
0V
25°C
300Ω to 10KΩ
Conditions
T = -20°C to 70°C
CE =V
DD
at standby
CE =V
SS
at A/D conversion
f
ADOSC
=800kHz
Min.
2.2
Typ.
3.0
0.2
Max.
3.6
1.0
300
Unit
V
µA
µA
100
240
Programmable Internal Oscillator
Parameter
Frequency
Frequency Step Size
Stability Against Supply
Voltage Variations
Stability Against
Temperature Variations
Symbol
f
ADOSC
∆f
ADOSC
∆f/f⋅∆V
DD
∆f/∆T
2.2V< V
DD
<3.0V
-20°C<T<70°C
Conditions
D1,D0 = 00
Min.
350
40
Typ.
500
70
15
-300
Max.
800
120
Unit
kHz
kHz
kHz/V
Hz/°C
Copyright
2002, EM Microelectronic-Marin SA
3
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EM6415
Sensor
Parameter
Sensor Drive Current
Symbol
I
SDRV
Conditions
R
RSEN1
=1.0kΩ , R
SEN
=4.0kΩ,
Program step 0
Mode S
R
RSEN1
=1.0kΩ , R
SEN
=4.0kΩ,
Program step 15
Mode S
Sensor Drive Current per
Step
Sensor Drive Current
vs Voltage Deviation
Sensor Bridge
Resistance1
Sensor Bridge
Resistance2
RSEN1 Resistance
RSEN2 Resistance
I
SDRV
/stp
I
SDRV
/V
R
SEN1
R
SEN2
R
RSEN1
R
RSEN2
R
RSEN1
=1.0kΩ , R
SEN
=4.0kΩ
R
RSEN1
=1.0kΩ , R
SEN
=4.0kΩ
2.2V < VDD < 3.0V
R
RSEN1
=1.3kΩ , I
SDRV
=200µA
R
RSEN2
=510Ω , I
SDRV
=500µA
Min.
276
Typ.
300
Max.
324
Unit
µA
468
510
552
µA
10
50
2.7
1.0
0.3
0.3
15
200
3.7
1.5
20
300
4.2
2.0
2.5
2.5
µA/stp
ppm
kΩ
kΩ
kΩ
kΩ
A/D Converter
Parameter
Input Voltage Range FS
Resolution
Integral Nonlinearity
Differential Nonlinearity
Conversion Time
Offset Adjust Range
FS Fine Ajust Range
Symbol
V
SENS
RESADC
INLADC
DNLADC
TCONVAD
V
OFFAD
V
FSFAD
12 bit FS fine adjust
Conditions
CH1,2,3,4H-CH1,2,3,4L
To resolve 14 bits ADC
f
ADOSC
=800kHz
f
ADOSC
=800kHz
f
ADOSC
=800kHz
f
ADOSC
=500kHz, 14bit
-60
-12.5
Min.
16
14
4
3
110
±40
+60
+12.5
Typ.
Max.
200
Unit
mV
Bits
LSB
LSB
ms
mV
%FS
Copyright
2002, EM Microelectronic-Marin SA
4
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EM6415
DC Characteristics
Parameter
Symbol
Conditions
Min.
Typ.
Max
Unit
Input Low Voltage
Input High Voltage
Input Low Current
Input High Current
V
IL
V
IH
I
IL
I
IH
ALE
,
RD
,
WR
, CE , CLKP,
CLKSEL, D0-D3
ALE
,
RD
,
WR
, CE , CLKP,
CLKSEL, D0-D3
ALE
,
RD
,
WR
, CE , CLKP,
CLKSEL, D0-D3
ALE
,
RD
,
WR
, CE , CLKP,
CLKSEL, D0 - D3
0.2⋅ V
DD
0.8⋅V
DD
-20
1
1
20
V
V
nA
nA
Output Low Voltage
Output High Voltage
V
OL
V
OH
I
OL
= 2mA, D0 –D3
I
OH
= -1mA, D0 –D3
2.4
0.1
2.95
0.4
V
V
Timing Characteristics
Data Write cycle
V
DD
= 3.0V, V
SS
= 0V, T = 25 °C, V
OH
= 0.8⋅V
DD
, V
OL
= 0.2⋅V
DD
Item
Symbol
Address Set-up Time
T
was
Address Hold Time
T
wah
Data Set-up Time
T
wds
Data Hold Time
T
wdh
ALE
Pulse Width
WR
Pulse Width
Min.
20
30
20
30
60
60
Typ.
25
35
25
35
65
65
Max.
-
-
-
-
-
-
Unit
ns
ns
ns
ns
ns
ns
T
wap
T
wwp
ALE
V
OH
V
OL
t
wap
WR
t
was
V
OH
t
wah
Address
V
OL
V
OH
V
OL
t
wds
t
wdp
Data
t
wdh
V
OH
V
OL
Fig. 3
D0-D3
Copyright
2002, EM Microelectronic-Marin SA
5
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Embedded System
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