K6F8016U6D-FF70 datasheet, PDF

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K6F8016U6D-FF70: Description512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM; Categorystorage storage; File Size154KB，9 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K6F8016U6D-FF70 Overview

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016U6D-FF70 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
package instruction	FBGA, BGA48,6X8,30
Reach Compliance Code	unknow
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PBGA-B48
memory density	8388608 bi
Memory IC Type	STANDARD SRAM
memory width	16
Number of terminals	48
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	512KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA48,6X8,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
Parallel/Serial	PARALLEL
power supply	3 V
Certification status	Not Qualified
Maximum standby current	0.000006 A
Minimum standby current	1.5 V
Maximum slew rate	0.022 mA
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM

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K6F8016U6D Family

Document Title

CMOS SRAM

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Revision History

Revision No. History

0.0

0.1

Initial draft

Revised

- Updated DC parameters (I

1, I

2, I

1, I

)

Finalized

- Added Lead-Free Products.

Draft Date

April 26, 2004

September 13, 2004

Remark

Preliminary

1.0

January 31, 2005

Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 1.0

January 2005

K6F8016U6D-FF70 Related Products

	K6F8016U6D-FF70	K6F8016U6D	K6F8016U6D-FF55	K6F8016U6D-XF55	K6F8016U6D-XF70
Description	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Is it Rohs certified?	incompatible	-	incompatible	conform to	conform to
Maker	SAMSUNG	-	SAMSUNG	SAMSUNG	SAMSUNG
package instruction	FBGA, BGA48,6X8,30	-	VFBGA, BGA48,6X8,30	FBGA, BGA48,6X8,30	FBGA, BGA48,6X8,30
Reach Compliance Code	unknow	-	unknow	unknow	unknow
Maximum access time	70 ns	-	55 ns	55 ns	70 ns
I/O type	COMMON	-	COMMON	COMMON	COMMON
JESD-30 code	R-PBGA-B48	-	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48
memory density	8388608 bi	-	8388608 bi	8388608 bi	8388608 bi
Memory IC Type	STANDARD SRAM	-	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	16	-	16	16	16
Number of terminals	48	-	48	48	48
word count	524288 words	-	524288 words	524288 words	524288 words
character code	512000	-	512000	512000	512000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	-	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-	-40 °C	-40 °C	-40 °C
organize	512KX16	-	512KX16	512KX16	512KX16
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	FBGA	-	VFBGA	FBGA	FBGA
Encapsulate equivalent code	BGA48,6X8,30	-	BGA48,6X8,30	BGA48,6X8,30	BGA48,6X8,30
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH	-	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH
Parallel/Serial	PARALLEL	-	PARALLEL	PARALLEL	PARALLEL
power supply	3 V	-	3 V	3 V	3 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.000006 A	-	0.000006 A	0.000006 A	0.000006 A
Minimum standby current	1.5 V	-	1.5 V	1.5 V	1.5 V
Maximum slew rate	0.022 mA	-	0.028 mA	0.028 mA	0.022 mA
Nominal supply voltage (Vsup)	3 V	-	3 V	3 V	3 V
surface mount	YES	-	YES	YES	YES
technology	CMOS	-	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	-	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	BALL	-	BALL	BALL	BALL
Terminal pitch	0.75 mm	-	0.75 mm	0.75 mm	0.75 mm
Terminal location	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM

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