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K6F8016U6D

Description
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
File Size154KB,9 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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K6F8016U6D Overview

512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F8016U6D Family
Document Title
CMOS SRAM
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0
0.1
Initial draft
Revised
- Updated DC parameters (I
CC
1, I
CC
2, I
SB
1, I
DR
)
Finalized
- Added Lead-Free Products.
Draft Date
April 26, 2004
September 13, 2004
Remark
Preliminary
Preliminary
1.0
January 31, 2005
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
January 2005

K6F8016U6D Related Products

K6F8016U6D K6F8016U6D-FF70 K6F8016U6D-FF55 K6F8016U6D-XF55 K6F8016U6D-XF70
Description 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Is it Rohs certified? - incompatible incompatible conform to conform to
Maker - SAMSUNG SAMSUNG SAMSUNG SAMSUNG
package instruction - FBGA, BGA48,6X8,30 VFBGA, BGA48,6X8,30 FBGA, BGA48,6X8,30 FBGA, BGA48,6X8,30
Reach Compliance Code - unknow unknow unknow unknow
Maximum access time - 70 ns 55 ns 55 ns 70 ns
I/O type - COMMON COMMON COMMON COMMON
JESD-30 code - R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48
memory density - 8388608 bi 8388608 bi 8388608 bi 8388608 bi
Memory IC Type - STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width - 16 16 16 16
Number of terminals - 48 48 48 48
word count - 524288 words 524288 words 524288 words 524288 words
character code - 512000 512000 512000 512000
Operating mode - ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature - 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature - -40 °C -40 °C -40 °C -40 °C
organize - 512KX16 512KX16 512KX16 512KX16
Output characteristics - 3-STATE 3-STATE 3-STATE 3-STATE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code - FBGA VFBGA FBGA FBGA
Encapsulate equivalent code - BGA48,6X8,30 BGA48,6X8,30 BGA48,6X8,30 BGA48,6X8,30
Package shape - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form - GRID ARRAY, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, FINE PITCH GRID ARRAY, FINE PITCH
Parallel/Serial - PARALLEL PARALLEL PARALLEL PARALLEL
power supply - 3 V 3 V 3 V 3 V
Certification status - Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current - 0.000006 A 0.000006 A 0.000006 A 0.000006 A
Minimum standby current - 1.5 V 1.5 V 1.5 V 1.5 V
Maximum slew rate - 0.022 mA 0.028 mA 0.028 mA 0.022 mA
Nominal supply voltage (Vsup) - 3 V 3 V 3 V 3 V
surface mount - YES YES YES YES
technology - CMOS CMOS CMOS CMOS
Temperature level - INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form - BALL BALL BALL BALL
Terminal pitch - 0.75 mm 0.75 mm 0.75 mm 0.75 mm
Terminal location - BOTTOM BOTTOM BOTTOM BOTTOM
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