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RSL020P03

Description
4V Drive Pch MOS FET
File Size45KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Download Datasheet View All

RSL020P03 Overview

4V Drive Pch MOS FET

RSL020P03
Transistors
4V Drive Pch MOS FET
RSL020P03
Structure
Silicon P-channel MOS FET
External dimensions
(Unit : mm)
TUMT6
2.0
1.3
0.65 0.65
(6)
(5)
(4)
0.85Max.
Features
1) Low On-resistance.
2) High speed switching.
1pin mark
0.2
0.77
1.7
0.2
(1)
(2)
(3)
2.1
0~0.1
0.17
0.3
Applications
Switching
Abbreviated symbol : SL
Packaging specifications
Package
Type
RSL020P03
Code
Basic ordering unit (pieces)
Taping
TR
3000
Inner circuit
(6)
(5)
(4)
∗2
∗1
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
(1)
(2)
(3)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
Absolute maximum ratings
(Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
∗1
Pw≤10µs, Duty cycle≤1%
∗2
Mounted on a ceramic board
Symbol
V
DSS
V
GSS
I
D
I
DP
∗1
I
S
I
SP
∗1
P
D
∗2
Tch
Tstg
Limits
−30
±20
±2
±8
−0.8
−8
1
150
−55
to
+150
Unit
V
V
A
A
A
A
W
°C
°C
Thermal resistance
Parameter
Channel to ambient
Mounted on a ceramic board
Symbol
Rth(ch-a)
Limits
125
Unit
°C/W
0.15Max.
1/2

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