AT49BV322D-70TU datasheet, PDF

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AT49BV322D-70TU: Description2M X 16 FLASH 3V PROM, 70 ns, PDSO48; Categorystorage storage; File Size268KB，33 Pages; ManufacturerAtmel (Microchip); Environmental Compliance

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AT49BV322D-70TU Overview

2M X 16 FLASH 3V PROM, 70 ns, PDSO48

AT49BV322D-70TU Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Atmel (Microchip)
Parts packaging code	TSOP1
package instruction	12 X 20 MM, GREEN, PLASTIC, MO-142DD, TSOP1-48
Contacts	48
Reach Compliance Code	unknow
ECCN code	3A991.B.1.A
Maximum access time	70 ns
Spare memory width	8
startup block	BOTTOM
command user interface	YES
Universal Flash Interface	YES
Data polling	YES
JESD-30 code	R-PDSO-G48
JESD-609 code	e3
length	18.4 mm
memory density	33554432 bi
Memory IC Type	FLASH
memory width	16
Humidity sensitivity level	3
Number of functions	1
Number of departments/size	8,63
Number of terminals	48
word count	2097152 words
character code	2000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2MX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1
Encapsulate equivalent code	TSSOP48,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
power supply	3/3.3 V
Programming voltage	3 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	1.2 mm
Department size	8K,64K
Maximum standby current	0.000025 A
Maximum slew rate	0.025 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.65 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	40
switch bit	YES
type	NOR TYPE
width	12 mm

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Features

•

Single Voltage Read/Write Operation: 2.65V to 3.6V

•

Access Time – 70 ns

•

Sector Erase Architecture

– Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout

– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout

Fast Word Program Time – 10 µs

Fast Sector Erase Time – 100 ms

Suspend/Resume Feature for Erase and Program

– Supports Reading and Programming from Any Sector by Suspending Erase

of a Different Sector

– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending

Programming of Any Other Byte/Word

Low-power Operation

– 10 mA Active

– 15 µA Standby

Data Polling, Toggle Bit, Ready/Busy for End of Program Detection

VPP Pin for Write Protection and Accelerated Program Operation

RESET Input for Device Initialization

Sector Lockdown Support

TSOP and CBGA Package Options

Top or Bottom Boot Block Configuration Available

128-bit Protection Register

Minimum 100,000 Erase Cycles

Common Flash Interface (CFI)

•

32-megabit

(2M x 16/4M x 8)

3-volt Only

Flash Memory

AT49BV322D

AT49BV322DT

•

1. Description

The AT49BV322D(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152

words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on

I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sec-

tors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball

CBGA package. The device has CE and OE control signals to avoid any bus conten-

tion. This device can be read or reprogrammed using a single power supply, making it

ideally suited for in-system programming.

The device powers on in the read mode. Command sequences are used to place the

device in other operation modes such as program and erase. The device has the

capability to protect the data in any sector (see

“Sector Lockdown” on page 7).

To increase the flexibility of the device, it contains an Erase Suspend and Program

Suspend feature. This feature will put the erase or program on hold for any amount of

time and let the user read data from or program data to any of the remaining sectors

within the memory. The end of a program or an erase cycle is detected by the

READY/BUSY pin, Data Polling or by the toggle bit.

3582B–FLASH–11/05

AT49BV322D(T)

puts. The outputs are put in the high impedance state whenever CE or OE is high. This dual-line

control gives designers flexibility in preventing bus contention.

4.3

Reset

A RESET input pin is provided to ease some system applications. When RESET is at a logic

high level, the device is in its standard operating mode. A low level on the RESET input halts the

present device operation and puts the outputs of the device in a high impedance state. When a

high level is reasserted on the RESET pin, the device returns to the read or standby mode,

depending upon the state of the control inputs.

4.4

Erase

Before a byte/word can be reprogrammed, it must be erased. The erased state of memory bits is

a logical “1”. The entire device can be erased by using the Chip Erase command or individual

sectors can be erased by using the Sector Erase command.

4.4.1

Chip Erase

The entire device can be erased at one time by using the six-byte chip erase software code.

After the chip erase has been initiated, the device will internally time the erase operation so that

no external clocks are required. The maximum time to erase the chip is t

If the sector lockdown has been enabled, the chip erase will not erase the data in the sector that

has been locked out; it will erase only the unprotected sectors. After the chip erase, the device

will return to the read or standby mode.

4.4.2

Sector Erase

As an alternative to a full chip erase, the device is organized into 71 sectors (SA0 - SA70) that

can be individually erased. The Sector Erase command is a six-bus cycle operation. The sector

address is latched on the falling WE edge of the sixth cycle while the 30H data input command is

latched on the rising edge of WE. The sector erase starts after the rising edge of WE of the sixth

cycle. The erase operation is internally controlled; it will automatically time to completion. The

maximum time to erase a sector is t

SEC

. When the sector programming lockdown feature is not

enabled, the sector will erase (from the same Sector Erase command). An attempt to erase a

sector that has been protected will result in the operation terminating immediately.

4.5

Byte/Word Programming

Once a memory block is erased, it is programmed (to a logical “0”) on a byte-by-byte or on a

word-by-word basis. Programming is accomplished via the internal device command register

and is a four-bus cycle operation. The device will automatically generate the required internal

program pulses.

Any commands written to the chip during the embedded programming cycle will be ignored. If a

hardware reset happens during programming, the data at the location being programmed will be

corrupted. Please note that a data “0” cannot be programmed back to a “1”; only erase opera-

tions can convert “0”s to “1”s. Programming is completed after the specified t

cycle time. The

Data Polling feature or the Toggle Bit feature may be used to indicate the end of a program

cycle. If the erase/program status bit is a “1”, the device was not able to verify that the erase or

program operation was performed successfully.

3582B–FLASH–11/05

AT49BV322D-70TU Related Products

	AT49BV322D-70TU	AT49BV322D	AT49BV322DT	AT49BV322DT-70TU	AT49BV322DT-70CU
Description	2M X 16 FLASH 3V PROM, 70 ns, PDSO48	2M X 16 FLASH 3V PROM, 70 ns, PBGA48	2M X 16 FLASH 3V PROM, 70 ns, PBGA48	2M X 16 FLASH 3V PROM, 70 ns, PBGA48	2M X 16 FLASH 3V PROM, 70 ns, PBGA48
Spare memory width	8	8	8	8	8
memory width	16	16	16	16	16
Number of functions	1	1	1	1	1
Number of terminals	48	48	48	48	48
Maximum operating temperature	85 °C	85 Cel	85 Cel	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 Cel	-40 Cel	-40 °C	-40 °C
organize	2MX16	2M X 16	2M X 16	2MX16	2MX16
surface mount	YES	Yes	Yes	YES	YES
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	GULL WING	BALL	BALL	GULL WING	BALL
Terminal location	DUAL	BOTTOM	BOTTOM	DUAL	BOTTOM
Is it Rohs certified?	conform to	-	-	conform to	conform to
Maker	Atmel (Microchip)	-	-	Atmel (Microchip)	Atmel (Microchip)
Parts packaging code	TSOP1	-	-	TSOP1	BGA
package instruction	12 X 20 MM, GREEN, PLASTIC, MO-142DD, TSOP1-48	-	-	12 X 20 MM, GREEN, PLASTIC, MO-142DD, TSOP1-48	7 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, GREEN, PLASTIC, CBGA-48
Contacts	48	-	-	48	48
Reach Compliance Code	unknow	-	-	unknow	unknown
ECCN code	3A991.B.1.A	-	-	3A991.B.1.A	3A991.B.1.A
Maximum access time	70 ns	-	-	70 ns	70 ns
startup block	BOTTOM	-	-	TOP	TOP
command user interface	YES	-	-	YES	YES
Universal Flash Interface	YES	-	-	YES	YES
Data polling	YES	-	-	YES	YES
JESD-30 code	R-PDSO-G48	-	-	R-PDSO-G48	R-PBGA-B48
JESD-609 code	e3	-	-	e3	e1
length	18.4 mm	-	-	18.4 mm	10 mm
memory density	33554432 bi	-	-	33554432 bi	33554432 bit
Memory IC Type	FLASH	-	-	FLASH	FLASH
Humidity sensitivity level	3	-	-	3	3
Number of departments/size	8,63	-	-	8,63	8,63
word count	2097152 words	-	-	2097152 words	2097152 words
character code	2000000	-	-	2000000	2000000
Operating mode	ASYNCHRONOUS	-	-	ASYNCHRONOUS	ASYNCHRONOUS
Package body material	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP1	-	-	TSOP1	VFBGA
Encapsulate equivalent code	TSSOP48,.8,20	-	-	TSSOP48,.8,20	BGA48,6X8,32
Package shape	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	-	-	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	-	-	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	260	-	-	260	260
power supply	3/3.3 V	-	-	3/3.3 V	3/3.3 V
Programming voltage	3 V	-	-	3 V	3 V
Certification status	Not Qualified	-	-	Not Qualified	Not Qualified
ready/busy	YES	-	-	YES	YES
Maximum seat height	1.2 mm	-	-	1.2 mm	1 mm
Department size	8K,64K	-	-	8K,64K	8K,64K
Maximum standby current	0.000025 A	-	-	0.000025 A	0.000025 A
Maximum slew rate	0.025 mA	-	-	0.025 mA	0.025 mA
Maximum supply voltage (Vsup)	3.6 V	-	-	3.6 V	3.6 V
Minimum supply voltage (Vsup)	2.65 V	-	-	2.65 V	2.65 V
Nominal supply voltage (Vsup)	3 V	-	-	3 V	3 V
technology	CMOS	-	-	CMOS	CMOS
Terminal surface	Matte Tin (Sn)	-	-	Matte Tin (Sn)	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
Terminal pitch	0.5 mm	-	-	0.5 mm	0.8 mm
Maximum time at peak reflow temperature	40	-	-	40	40
switch bit	YES	-	-	YES	YES
type	NOR TYPE	-	-	NOR TYPE	NOR TYPE
width	12 mm	-	-	12 mm	7 mm

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