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AT49BV322DT-70TU

Description
2M X 16 FLASH 3V PROM, 70 ns, PBGA48
Categorystorage    storage   
File Size268KB,33 Pages
ManufacturerAtmel (Microchip)
Environmental Compliance
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AT49BV322DT-70TU Overview

2M X 16 FLASH 3V PROM, 70 ns, PBGA48

AT49BV322DT-70TU Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerAtmel (Microchip)
Parts packaging codeTSOP1
package instruction12 X 20 MM, GREEN, PLASTIC, MO-142DD, TSOP1-48
Contacts48
Reach Compliance Codeunknow
ECCN code3A991.B.1.A
Maximum access time70 ns
Spare memory width8
startup blockTOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PDSO-G48
JESD-609 codee3
length18.4 mm
memory density33554432 bi
Memory IC TypeFLASH
memory width16
Humidity sensitivity level3
Number of functions1
Number of departments/size8,63
Number of terminals48
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size8K,64K
Maximum standby current0.000025 A
Maximum slew rate0.025 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.65 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
switch bitYES
typeNOR TYPE
width12 mm
Features
Single Voltage Read/Write Operation: 2.65V to 3.6V
Access Time – 70 ns
Sector Erase Architecture
– Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout
– Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
Fast Word Program Time – 10 µs
Fast Sector Erase Time – 100 ms
Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Byte/Word in the Non-suspending Sectors by Suspending
Programming of Any Other Byte/Word
Low-power Operation
– 10 mA Active
– 15 µA Standby
Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
VPP Pin for Write Protection and Accelerated Program Operation
RESET Input for Device Initialization
Sector Lockdown Support
TSOP and CBGA Package Options
Top or Bottom Boot Block Configuration Available
128-bit Protection Register
Minimum 100,000 Erase Cycles
Common Flash Interface (CFI)
32-megabit
(2M x 16/4M x 8)
3-volt Only
Flash Memory
AT49BV322D
AT49BV322DT
1. Description
The AT49BV322D(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152
words of 16 bits each or 4,194,304 bytes of 8 bits each. The x16 data appears on
I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 71 sec-
tors for erase operations. The device is offered in a 48-lead TSOP and a 48-ball
CBGA package. The device has CE and OE control signals to avoid any bus conten-
tion. This device can be read or reprogrammed using a single power supply, making it
ideally suited for in-system programming.
The device powers on in the read mode. Command sequences are used to place the
device in other operation modes such as program and erase. The device has the
capability to protect the data in any sector (see
“Sector Lockdown” on page 7).
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors
within the memory. The end of a program or an erase cycle is detected by the
READY/BUSY pin, Data Polling or by the toggle bit.
3582B–FLASH–11/05

AT49BV322DT-70TU Related Products

AT49BV322DT-70TU AT49BV322D AT49BV322DT AT49BV322D-70TU AT49BV322DT-70CU
Description 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 2M X 16 FLASH 3V PROM, 70 ns, PBGA48
Spare memory width 8 8 8 8 8
memory width 16 16 16 16 16
Number of functions 1 1 1 1 1
Number of terminals 48 48 48 48 48
Maximum operating temperature 85 °C 85 Cel 85 Cel 85 °C 85 °C
Minimum operating temperature -40 °C -40 Cel -40 Cel -40 °C -40 °C
organize 2MX16 2M X 16 2M X 16 2MX16 2MX16
surface mount YES Yes Yes YES YES
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Terminal form GULL WING BALL BALL GULL WING BALL
Terminal location DUAL BOTTOM BOTTOM DUAL BOTTOM
Is it Rohs certified? conform to - - conform to conform to
Maker Atmel (Microchip) - - Atmel (Microchip) Atmel (Microchip)
Parts packaging code TSOP1 - - TSOP1 BGA
package instruction 12 X 20 MM, GREEN, PLASTIC, MO-142DD, TSOP1-48 - - 12 X 20 MM, GREEN, PLASTIC, MO-142DD, TSOP1-48 7 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, GREEN, PLASTIC, CBGA-48
Contacts 48 - - 48 48
Reach Compliance Code unknow - - unknow unknown
ECCN code 3A991.B.1.A - - 3A991.B.1.A 3A991.B.1.A
Maximum access time 70 ns - - 70 ns 70 ns
startup block TOP - - BOTTOM TOP
command user interface YES - - YES YES
Universal Flash Interface YES - - YES YES
Data polling YES - - YES YES
JESD-30 code R-PDSO-G48 - - R-PDSO-G48 R-PBGA-B48
JESD-609 code e3 - - e3 e1
length 18.4 mm - - 18.4 mm 10 mm
memory density 33554432 bi - - 33554432 bi 33554432 bit
Memory IC Type FLASH - - FLASH FLASH
Humidity sensitivity level 3 - - 3 3
Number of departments/size 8,63 - - 8,63 8,63
word count 2097152 words - - 2097152 words 2097152 words
character code 2000000 - - 2000000 2000000
Operating mode ASYNCHRONOUS - - ASYNCHRONOUS ASYNCHRONOUS
Package body material PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code TSOP1 - - TSOP1 VFBGA
Encapsulate equivalent code TSSOP48,.8,20 - - TSSOP48,.8,20 BGA48,6X8,32
Package shape RECTANGULAR - - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, THIN PROFILE - - SMALL OUTLINE, THIN PROFILE GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL - - PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) 260 - - 260 260
power supply 3/3.3 V - - 3/3.3 V 3/3.3 V
Programming voltage 3 V - - 3 V 3 V
Certification status Not Qualified - - Not Qualified Not Qualified
ready/busy YES - - YES YES
Maximum seat height 1.2 mm - - 1.2 mm 1 mm
Department size 8K,64K - - 8K,64K 8K,64K
Maximum standby current 0.000025 A - - 0.000025 A 0.000025 A
Maximum slew rate 0.025 mA - - 0.025 mA 0.025 mA
Maximum supply voltage (Vsup) 3.6 V - - 3.6 V 3.6 V
Minimum supply voltage (Vsup) 2.65 V - - 2.65 V 2.65 V
Nominal supply voltage (Vsup) 3 V - - 3 V 3 V
technology CMOS - - CMOS CMOS
Terminal surface Matte Tin (Sn) - - Matte Tin (Sn) Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)
Terminal pitch 0.5 mm - - 0.5 mm 0.8 mm
Maximum time at peak reflow temperature 40 - - 40 40
switch bit YES - - YES YES
type NOR TYPE - - NOR TYPE NOR TYPE
width 12 mm - - 12 mm 7 mm
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