MTD2955VG datasheet, PDF - EEWORLD Datasheet

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MTD2955VG: Description12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size232KB，9 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn; Environmental Compliance

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MTD2955VG Overview

12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET

MTD2955VG Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	ON Semiconductor
package instruction	LEAD FREE, CASE 369C-01, DPAK-3
Contacts	3
Manufacturer packaging code	CASE 369C-01
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	216 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	12 A
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.23 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	60 W
Maximum pulsed drain current (IDM)	42 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

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MTD2955V

Power MOSFET 12 A, 60 V

P−Channel DPAK

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. Designed for low voltage, high

speed switching applications in power supplies, converters and power

motor controls, these devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected voltage

transients.

Features

http://onsemi.com

12 A, 60 V

DS(on)

= 185 mW (Typ)

•

Avalanche Energy Specified

•

DSS

and V

DS(on)

Specified at Elevated Temperature

•

Pb−Free Packages are Available

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Drain−to−Source Voltage

Drain−to−Gate Voltage (R

= 1.0 MW)

Gate−to−Source Voltage

−

Continuous

−

Non−repetitive (t

≤

10 ms)

Drain Current

−

Continuous

Drain Current

−

Continuous @ 100°C

Drain Current

−

Single Pulse (t

≤

ms)

Total Power Dissipation

Derate above 25°C

Total Power Dissipation @ 25°C (Note 2)

Operating and Storage Temperature

Range

Single Pulse Drain−to−Source Avalanche

Energy

−

Starting T

= 25°C

= 25 Vdc, V

= 10 Vdc, Peak

= 12 Apk, L = 3.0 mH, R

= 25

Thermal Resistance

−

Junction to Case

−

Junction to Ambient (Note 1)

−

Junction to Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10

seconds

Symbol

DSS

DGR

GSM

Value

8.0

0.4

2.1

−55

175

216

Unit

Vdc

P−Channel

Vdc

Vpk

Adc

Apk

Watts

W/°C

Watts

°C

DPAK−3

CASE 369D

STYLE 2

1 2

DPAK−3

CASE 369C

STYLE 2

, T

stg

qJC

qJA

2.5

100

71.4

260

°C/W

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using the minimum recommended

pad size.

2. When surface mounted to an FR4 board using the 0.5 sq.in. pad size.

ORDERING INFORMATION

See detailed ordering and shipping information in the

package dimensions section on page 7 of this data sheet.

DEVICE MARKING INFORMATION

See general marking information in the device marking

section on page 7 of this data sheet.

Semiconductor Components Industries, LLC, 2006

August, 2006

−

Rev. 8

Publication Order Number:

MTD2955V/D

MTD2955VG Related Products

	MTD2955VG	MTD2955V	MTD2955VT4G	MTD2955VT4	MTD2955V-1	MTD2955V-1G
Description	12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET	12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET	12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET	12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET	12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET	12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET
package instruction	LEAD FREE, CASE 369C-01, DPAK-3	CASE 369C-01, DPAK-3	LEAD FREE, CASE 369C-01, DPAK-3	CASE 369C-01, DPAK-3	CASE 369D-01, DPAK-3	IN-LINE, R-PSIP-T3
Contacts	3	3	3	3	3	3
Manufacturer packaging code	CASE 369C-01	CASE 369C-01	CASE 369C-01	369C	CASE 369D-01	CASE 369D-01
Reach Compliance Code	_compli	_compli	_compli	_compli	_compli	_compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	216 mJ	216 mJ	216 mJ	216 mJ	216 mJ	216 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V	60 V	60 V	60 V	60 V	60 V
Maximum drain current (Abs) (ID)	12 A	12 A	12 A	12 A	12 A	12 A
Maximum drain current (ID)	12 A	12 A	12 A	12 A	12 A	12 A
Maximum drain-source on-resistance	0.23 Ω	0.23 Ω	0.23 Ω	0.23 Ω	0.23 Ω	0.23 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3
JESD-609 code	e3	e0	e3	e0	e0	e3
Humidity sensitivity level	1	1	1	1	1	1
Number of components	1	1	1	1	1	1
Number of terminals	2	2	2	2	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	IN-LINE
Peak Reflow Temperature (Celsius)	260	240	260	245	235	260
Polarity/channel type	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	60 W	60 W	60 W	60 W	60 W	60 W
Maximum pulsed drain current (IDM)	42 A	42 A	42 A	42 A	42 A	42 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	NO	NO
Terminal surface	Tin (Sn)	Tin/Lead (Sn/Pb)	Tin (Sn)	Tin/Lead (Sn80Pb20)	Tin/Lead (Sn/Pb)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	40	30	40	30	NOT SPECIFIED	40
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Is it Rohs certified?	conform to	incompatible	conform to	-	incompatible	conform to
Maker	ON Semiconductor	ON Semiconductor	-	-	ON Semiconductor	ON Semiconductor

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