IPP60R450E6XKSA1 datasheet, PDF

IPP60R450E6XKSA1: DescriptionMOSFET N-Ch 650V 9.2A TO220-3 CoolMOS E6; Categorysemiconductor Discrete semiconductor; File Size1MB，17 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

Download Datasheet Parametric Compare View All

IPP60R450E6XKSA1 Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	IPP60R450E6XKSA1	-	-	View	Buy Now

MOSFET N-Ch 650V 9.2A TO220-3 CoolMOS E6

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Infineon
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-220-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	9.2 A
Rds On - Drain-Source Resistance	410 mOhms
Vgs th - Gate-Source Threshold Voltage	2.5 V
Vgs - Gate-Source Voltage	20 V
Qg - Gate Charge	28 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	74 W
Channel Mode	Enhancement
Qualification	AEC-Q100
Packaging	Tube
Height	15.65 mm
Length	10 mm
Transistor Type	1 N-Channel
Width	4.4 mm
Fall Time	10 ns
NumOfPackaging	1
Rise Time	9 ns
Factory Pack Quantity	500
Typical Turn-Off Delay Time	70 ns
Typical Turn-On Delay Time	11 ns
Unit Weight	0.211644 oz

MOSFET

MetalOxideSemiconductorFieldEffectTransistor

CoolMOS™E6600V

600VCoolMOS™E6PowerTransistor

IPx60R450E6

DataSheet

Rev.2.2

Final

PowerManagement&Multimarket

	IPP60R450E6XKSA1	IPD60R450E6	IPP60R450E6
Description	MOSFET N-Ch 650V 9.2A TO220-3 CoolMOS E6	MOSFET N-Ch 650V 9.2A DPAK-2 CoolMOS E6	MOSFET N-Ch 650V 9.2A TO220-3 CoolMOS E6
Product Attribute	Attribute Value	Attribute Value	Attribute Value
Manufacturer	Infineon	Infineon	Infineon
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Details	Details	Details
Technology	Si	Si	Si
Mounting Style	Through Hole	SMD/SMT	Through Hole
Package / Case	TO-220-3	TO-252-3	TO-220-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V	600 V	600 V
Id - Continuous Drain Current	9.2 A	9.2 A	9.2 A
Rds On - Drain-Source Resistance	410 mOhms	410 mOhms	410 mOhms
Vgs - Gate-Source Voltage	20 V	20 V	20 V
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Configuration	Single	Single	Single
Pd - Power Dissipation	74 W	74 W	74 W
Height	15.65 mm	2.3 mm	15.65 mm
Length	10 mm	6.5 mm	10 mm
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Width	4.4 mm	6.22 mm	4.4 mm
Factory Pack Quantity	500	2500	500
Unit Weight	0.211644 oz	0.139332 oz	0.211644 oz
Vgs th - Gate-Source Threshold Voltage	2.5 V	-	2.5 V
Qg - Gate Charge	28 nC	-	28 nC
Channel Mode	Enhancement	-	Enhancement
Qualification	AEC-Q100	AEC-Q100	-
Packaging	Tube	Reel	Tube
Fall Time	10 ns	-	10 ns
NumOfPackaging	1	3	-
Rise Time	9 ns	-	9 ns
Typical Turn-Off Delay Time	70 ns	-	70 ns
Typical Turn-On Delay Time	11 ns	-	11 ns

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components