IPD60R450E6 datasheet, PDF - EEWORLD Datasheet

IPD60R450E6: DescriptionMOSFET N-Ch 650V 9.2A DPAK-2 CoolMOS E6; Categorysemiconductor Discrete semiconductor; File Size1MB，17 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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MOSFET N-Ch 650V 9.2A DPAK-2 CoolMOS E6

Parameter Name	Attribute value
Product Attribute	Attribute Value
Manufacturer	Infineon
Product Category	MOSFET
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	TO-252-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	9.2 A
Rds On - Drain-Source Resistance	410 mOhms
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Pd - Power Dissipation	74 W
Qualification	AEC-Q100
Packaging	Cut Tape
Packaging	MouseReel
Packaging	Reel
Height	2.3 mm
Length	6.5 mm
Transistor Type	1 N-Channel
Width	6.22 mm
NumOfPackaging	3
Factory Pack Quantity	2500
Unit Weight	0.139332 oz

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DataSheet

Rev.2.2

Final

PowerManagement&Multimarket

	IPD60R450E6	IPP60R450E6XKSA1	IPP60R450E6
Description	MOSFET N-Ch 650V 9.2A DPAK-2 CoolMOS E6	MOSFET N-Ch 650V 9.2A TO220-3 CoolMOS E6	MOSFET N-Ch 650V 9.2A TO220-3 CoolMOS E6
Product Attribute	Attribute Value	Attribute Value	Attribute Value
Manufacturer	Infineon	Infineon	Infineon
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Details	Details	Details
Technology	Si	Si	Si
Mounting Style	SMD/SMT	Through Hole	Through Hole
Package / Case	TO-252-3	TO-220-3	TO-220-3
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	600 V	600 V	600 V
Id - Continuous Drain Current	9.2 A	9.2 A	9.2 A
Rds On - Drain-Source Resistance	410 mOhms	410 mOhms	410 mOhms
Vgs - Gate-Source Voltage	20 V	20 V	20 V
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Configuration	Single	Single	Single
Pd - Power Dissipation	74 W	74 W	74 W
Height	2.3 mm	15.65 mm	15.65 mm
Length	6.5 mm	10 mm	10 mm
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Width	6.22 mm	4.4 mm	4.4 mm
Factory Pack Quantity	2500	500	500
Unit Weight	0.139332 oz	0.211644 oz	0.211644 oz
Qualification	AEC-Q100	AEC-Q100	-
Packaging	Reel	Tube	Tube
NumOfPackaging	3	1	-
Vgs th - Gate-Source Threshold Voltage	-	2.5 V	2.5 V
Qg - Gate Charge	-	28 nC	28 nC
Channel Mode	-	Enhancement	Enhancement
Fall Time	-	10 ns	10 ns
Rise Time	-	9 ns	9 ns
Typical Turn-Off Delay Time	-	70 ns	70 ns
Typical Turn-On Delay Time	-	11 ns	11 ns

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